10N65F EVVOSEMI | Alldatasheet
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Technical content
650V N-Channel Enhancement Mode MOSFET
Description
The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit TO-220F TO-220 VDSS Drain-Source Voltage (VGS = 0V) 650 V ID Continuous Drain Current A IDM Pulsed Drain Current (note1) A VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (note2) 426 mJ IAR Avalanche Current (note1) 9 A EAR Repetitive Avalanche Energy note1) 41 mJ PD Power Dissipation (TC = 25ºC) 32.1 W TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 ºC RthJC Thermal Resistance, Junction-to-Case 4.46 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 46.7 ºC/W Rev:2023A2 1
Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 650 685 -- V IDSS Zero Gate Voltage Drain Current VDS= 650V, VGS= 0V, TJ=25ºC -- -- 1 μA IGSS Gate-Source Leakage VGS = ±30V -- -- ±100 nA VGS(th) Gate-Source Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V RDS(on) Drain-Source On-Resistance (Note3) VGS = 10V, ID = 3.5A -- 0.75 0.9 Ω Ciss Input Capacitance VGS = 0V, VDS = 25V, f = 1.0MHz -- 1037 -- pF Coss Output Capacitance -- 138 -- Crss Reverse Transfer Capacitance -- 5.3 -- Qg Total Gate Charge VDD=520V, ID = 9A, VGS = 10V -- 19 -- nC Qgs Gate-Source Charge -- 7.3 -- Qgd Gate-Drain Charge -- 8.5 -- td(on) Turn-on Delay Time VDD=325V, ID = 7A, RG = 25Ω -- 18 -- ns tr Turn-on Rise Time -- 30 -- td(off) Turn-off Delay Time -- 61 -- tf Turn-off Fall Time -- 36 -- IS Continuous Body Diode Current TC = 25 ºC -- -- 9.0 A ISM Pulsed Diode Forward Current -- -- 36 A VSD Body Diode Voltage TJ = 25ºC, ISD = 7A, VGS = 0V -- -- 1.2 V trr Reverse Recovery Time VGS = 0V,IS = 7A, diF/dt =100A /μs -- 431 -- ns Qrr Reverse Recovery Charge -- 2.6 -- μC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 10N65FIP 650V N-Channel Enhancement Mode MOSFET Rev:2023A2 2
650V N-Channel Enhancement Mode MOSFET Rev:2023A2 3
650V N-Channel Enhancement Mode MOSFET Rev:2023A2 4
650V N-Channel Enhancement Mode MOSFET Rev:2023A2 5