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2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 1 of 13 - www.qorvo.com Product Description Qorvo’s TGA2578 -CP is a packaged wideband power amplifier fabricated on Qorvo’s QGaN25 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30 W saturated output power with a power-added efficiency of > 30 %, and > 26 dB small signal gain. The TGA2578-CP is offered in a 10-lead 15.2 x 15.2 mm bolt-down package. The package has a pure Cu base, offering superior thermal management. The TGA2578-CP is ideally suited to support both commercial and defense applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Lead-free and RoHS compliant.

Ordering Information

Part No. Description TGA2578-CP 2 – 6 GHz 30 W GaN Power Amplifier

1096052 TGA2578-CP Evaluation Board

  • Frequency Range: 2 – 6 GHz
  • POUT: 45 dBm @ PIN = 23 dBm
  • PAE: >30% @ PIN = 23 dBm
  • Small Signal Gain: > 26 dB
  • IM3: -30 dBc @ 30 dBm Pout/Tone
  • Bias: VD = +28 V, IDQ = 400 mA, VG = −2.8 V typical
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for more details

Applications

  • Electronic Warfare
  • Radar
  • Communications
  • Test Instrumentation
  • EMC Amplifier

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 2 of 13 - www.qorvo.com Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to 0 V Drain Current (ID) 5 A Gate Current (IG) See plot page 8 Power Dissipation (PDISS), 85°C 85 W Input Power (PIN), 50Ω, 85°C, CW 27 dBm Input Power (PIN), 85°C, VSWR 3:1, VD = 28V, CW 27 dBm Input Power (PIN), 85°C, VSWR 10:1, VD = 28V, CW 25 dBm Lead Soldering Temperature (30 Seconds) 260 ºC Storage Temperature −55 to 150 ºC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Min Typ. Max Units Drain Voltage (VD) +28 V Drain Current, (IDQ) 400 mA Gate Voltage (VG) -2.8 Typical V TBASE Range −40 +85 ºC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 6 GHz Small Signal Gain >26 dB Input Return Loss >12 dB Output Return Loss >5 dB Output Power (@ PIN = 23 dBm) 45 dBm Power Added Efficiency (@ PIN = 23 dBm) >30 % IM3 (Pout/tone = 30 dBm/Tone) -30 dBc IM5 (Pout/tone = 30 dBm/Tone) -40 dBc Small Signal Gain Temperature Coefficient −0.05 dB/°C Output Power Temperature Coefficient -0.02 dBm/°C Test conditions unless otherwise noted: 25 ºC, VD = +28 V, IDQ = 400 mA, VG = −2.8 V typical, CW.

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 3 of 13 - www.qorvo.com Typical Performance – Large Signal Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW. Output Power (dBm) Frequency (GHz) Output Power vs. Frequency vs. Temp. -40 °C 25 °C 85 °C PIN = 23 dBm, Temp = 25 °C Output Power (dBm) Frequency (GHz) Output Power vs. Frequency vs. VD 25 V 28 V 30 V PIN = 23 dBm, Temp = 25 °C 0 5 10 15 20 25 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. Temp. -40 °C 25 °C 85 °C

4 GHz

Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. VD 30 V 28 V 25 V Temp = 25 °C, 4 GHz 0 5 10 15 20 25 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. Freq.

6 GHz

2 GHz

Temp = 25 °C

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 4 of 13 - www.qorvo.com Typical Performance – Large Signal Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW. Power Added Efficiency (%) Frequency (GHz) PAE vs. Frequency vs. VD 30 V 28 V 25 V PIN = 23 dBm, Temp = 25 °C 0 5 10 15 20 25 Gain (dB) Input Power (dBm) Power Gain vs. Input Power vs. VD 30 V 28 V 25 V Temp = 25 °C, 4 GHz 0 5 10 15 20 25 Power Added Efficiency (%) Input Power (dBm) PAE vs. Input Power vs. Freq. Temp = 25 °C 0 5 10 15 20 25 Gain (dB) Input Power (dBm) Power Gain vs. Input Power vs. Freq. Temp = 25 °C Power Added Efficiency (%) Frequency (GHz) PAE vs. Frequency vs. Temp. -40 °C 25 °C 85 °C PIN = 23 dBm 0 5 10 15 20 25 Gain (dB) Input Power (dBm) Power Gain vs. Input Power vs. Temp. -40 °C 25 °C 85 °C

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 5 of 13 - www.qorvo.com Typical Performance – Large Signal Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain Current (A) Frequency (GHz) Drain Current vs. Frequency vs. VD 30 V 28 V 25 V PIN = 23 dBm, Temp = 25 °C Gate Current (mA) Frequency (GHz) Gate Current vs. Frequency vs. VD PIN = 23 dBm, Temp = 25 °C 30 V 28 V 25 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain Current (A) Frequency (GHz) Drain Current vs. Frequency vs. Temp. -40 °C 25 °C 85 °C PIN = 23 dBm Gate Current (mA) Frequency (GHz) Gate Current vs. Frequency vs. Temp. -40 °C 25 °C 85 °C PIN = 23 dBm 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 Drain Current (mA) Input Power (dBm) Drain Current vs. Input Power vs. Freq. Temp = 25 °C 0 5 10 15 20 25 Gate Current (mA) Input Power (dBm) Gate Current vs. Input Power vs. Temp. -40 °C 25 °C 85 °C

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 6 of 13 - www.qorvo.com Typical Performance – Linearity Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW. -90 -80 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 2f0 Output Power (dBc) Fundamental Output Power (dBm) 2nd Harmonic vs. Output Power vs. Freq. -90 -80 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 3f0 Output Power (dBc) Fundamental Output Power (dBm) 3rd Harmonic vs. Output Power. vs. Freq. Temp = 25 °C -60 -55 -50 -45 -40 -35 -30 -25 -20 IM3 (dBc) Frequency (GHz) IM3 vs. Frequency vs. Temperature 25 °C 85 °C POUT = 30 dBm/Tone -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 IM5 (dBc) Frequency (GHz) IM5 vs. Frequency vs. Temperature 25 °C 85 °C POUT = 30 dBm/Tone -60 -55 -50 -45 -40 -35 -30 -25 -20 10 15 20 25 30 35 40 IM3 (dBc) Output Power per Tone (dBm) IM3 vs. Output Power vs. Frequency Temp = 25 °C -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 10 15 20 25 30 35 40 IM5 (dBc) Output Power per Tone (dBm) IM5 vs. Output Power vs. Frequency Temp = 25 °C

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 7 of 13 - www.qorvo.com Performance Plots – Small Signal (CW) Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW. 1 2 3 4 5 6 7 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. VD 25 V 28 V 30 V 32 V Temp = 25 °C 1 2 3 4 5 6 7 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. Temp. -50 °C 25 °C 85 °C -30 -27 -24 -21 -18 -15 -12 1 2 3 4 5 6 7 S11 (dB) Frequency (GHz) Input Return Loss vs. Frequency vs. VD Temp = 25 °C 25 V 28 V 30 V 32 V -30 -27 -24 -21 -18 -15 -12 1 2 3 4 5 6 7 S11 (dB) Frequency (GHz) Input Return Loss vs. Frequency vs. Temp. -50 °C 25 °C 85 °C -30 -27 -24 -21 -18 -15 -12 1 2 3 4 5 6 7 S22 (dB) Frequency (GHz) Output Return Loss vs. Frequency vs. VD Temp = 25 °C 25 V 28 V 30 V 32 V -30 -27 -24 -21 -18 -15 -12 1 2 3 4 5 6 7 S22 (dB) Frequency (GHz) Output Return Loss vs. Freq. vs. Temp. -50 °C 25 °C 85 °C

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 8 of 13 - www.qorvo.com Dissipated Power and Maximum Gate Current Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) (1) VD = 28 V, IDQ = 400 mA, Freq. = 5 GHz Tbase = 85 °C, VD = 28 V, ID_Drive = 3 A, PIN = 23 dBm, POUT = 44dBm, PDISS = 55 W 1.29 ºC/W Channel Temperature, TCH (Under RF) (2) 156 ºC Notes: 1. Thermal resistance is referenced to the back of package (85 ºC) 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates 100 110 110 120 130 140 150 160 170 180 Absolute Maximum Gate Current (mA) Channel Temperature (°C) Absolute Max. Gate Current vs. TCH 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 Power Dissipation (W) Frequency (GHz) PDISS vs. Frequency vs. TBASE 85 °C 25 °C -40 °C PIN = 23 dBm, CW

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 9 of 13 - www.qorvo.com Applications Information and Pin Layout Notes: 1. VG must be biased from both sides (Pins 1 and 5) 2. VD must be biased from both sides (Pins 6 and 10) Bias Up Procedure 1. Set ID limit to 5 A, IG limit to 25 mA 2. Apply −5 V to VG 3. Apply 28 V to VD; ensure IDQ is approx. 0 mA 4. Adjust VG until IDQ = 400 mA (VG ~ −2.8 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pad No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 2,4,7,9 GND Must be grounded on the PCB.

3 RFIN Input; matched to 50 Ω; DC blocked

6,10 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Output; matched to 50 Ω; DC blocked.

8 RF OUT

0.1 uF C10 0.1 uF 0.1 uF 0.1 uF 10 uF 10 Ω Vg 10 Ω 10 uF

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 10 of 13 - www.qorvo.com Evaluation Board (EVB) Assembly Drawing PCB NOTES: 2. Both Top and Bottom VD and VG must be biased. Bill of Materials Reference Des. Value Description Manuf. Part Number C3, C4, C9, C10 0.1 μF Cap, 0402, 50 V, 10%, X7R Various – C5, C6 10 uF Cap, 1206, 50 V, 20%, X5R Various – R3, R4 10 Ω Res, 0402, 5% Various – GND GND GND VDVG GND VDVG GND GND C4 C10

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 11 of 13 - www.qorvo.com Assembly Notes 1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the package. 3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value. Use the following tightening pattern: 4. Apply no-flux solder to each pin of the TGA2578-CP. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is recommended.

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 12 of 13 - www.qorvo.com Mechanical Information Units: inches Tolerances: (unless specified) x.xx = ± 0.01 x.xxx = ± 0.005 Materials: Base: Copper Leads: Alloy 194 Lid: LCP (liquid crystal polymer) All metalized features are gold plated Part is epoxy sealed Marking: TGA2578-CP: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number (unique for all parts within one assembly lot) MXXX: Batch ID

2 – 6 GHz 30 W GaN Power Amplifier Data Sheet Rev. D, March 18, 2019 - 13 of 13 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1B JEDEC Standard JESD22 A114 ESD – Charge Device Model (CDM) Class C1 JEDEC Standard JESD22-C101F MSL – Moisture Sensitivity Level N/A RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:

  • Lead Free
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C15H12Br402) Free
  • PFOS Free
  • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Solderability The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 °C. The use of no-clean solder to avoid washing after soldering is recommended.