1078986

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Technical content

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 1 of 13 - www.qorvo.com General Description The Qorvo TGA2524-SM is a Ku-Band GaAs Power Amplifier. The TGA2524-SM operates from 11.3 – 16 GHz and is designed using Qorvo’s power pHEMT production process. TGA2524-SM has a typical gain of 23dB, and can deliver 26.5 dBm of saturated output power and 26dBm at P1dB. It is a high linearity part with output TOI of 37dBm at 8dBm output per tone. The TGA2524-SM is available in a low-cost, surface mount 16 lead 3x3 QFN overmold package and is ideally suited for Point-to-Point Radio applications. Product Features

• Frequency Range: 11.3 – 16 GHz
• Psat: 26.5 dBm
• P1dB: 26 dBm
• Gain: 23 dB, good gain flatness with regulation
• OTOI: 37 dBm at 8 dBm Pout/tone
• NF: 7 dB
• Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.52 V Typical
• Package Dimensions: 3.0 x 3.0 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details.

Applications

• Point-to-Point Radio
• Ku-band Sat-Com Functional Block Diagram

Ordering Information

Part No. Description TGA2524-SM TGA2524-SM, Driver Amplifier

1078986 TGA2524-SM Tape and Reel 7", Qty 1000

TGA2524-SMEVB02 TGA2424-SM Evaluation Board, Qty 1 76 85 16 14 1315

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 2 of 13 - www.qorvo.com Absolute Maximum Ratings Parameter Min Value Max Value Units Drain Voltage, Vd - 8 V Gate Voltage, Vg -2 0 V Drain to Gate Voltage, Vd – Vg - 12 V Drain Current, Id - 450 mA Gate Current, Ig -8.2 10 mA Power Dissipation, Pdiss - 3.6 W RF Input Power, CW, T = 25ºC - 19 dBm Channel Temperature, Tch - 200 °C Mounting Temperature (30 Seconds) - 260 °C Storage Temperature -40 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may reduce device reliability. Recommended Operating Conditions Parameter Value Units Drain Voltage 5 V Drain Current (quiescent, IDQ) 320 mA Gate Voltage (typical) −0.52 V Operating Temperature Range −40 to 85 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test Conditions unless otherwise stated: VD = 5V, IDQ = 320mA, 25 °C. Data de-embedded to device reference planes Parameter Min Typical Max Units Frequency 11.3 16 GHz Small Signal Gain (11.3 to 12 GHz) 16 20 dB Small Signal Gain (12 to 16 GHz) 20 23 dB Input Return Loss -12 -8 dB Output Return Loss -15 -10 dB Output Power at Saturation (11.3 to 12 GHz) 24 25 dBm Output Power at Saturation (12 to 16 GHz) 25.5 26.5 dBm Output Power at 1dB Compression (11.3 to 12 GHz) 23.5 24.5 dBm Output Power at 1dB Compression (12 to 16 GHz) 25 26 dBm Noise Figure 7 dB Output TOI (@ Drain Current of 300 mA) 37 dBm Gain Temperature Coefficient -0.035 dB/°C Power Temperature Coefficient -0.007 dB/°C

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 3 of 13 - www.qorvo.com Performance Plots – Small Signal Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C. 10 11 12 13 14 15 16 17 18 19 20 Gain (dB) Frequency (GHz) Gain vs. Frequency Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 °C -25 -20 -15 -10 10 11 12 13 14 15 16 17 18 19 20 Return Loss (dB) Frequency (GHz) IRL, ORL vs. Frequency Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 °C IRL ORL Output Power (dBm) Frequency (GHz) Output Power vs. Frequency Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 oC Psat P1dB Id held constant throughout the test 200 250 300 350 400 450 500 550 -10 -8 -6 -4 -2 0 2 4 6 8 Id (mA) Output Power (dBm), Gain (dB) Input Power (dBm) Output Power, Gain, Id vs. Input Power Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 oC Pout Gain Id @ 14 GHz Id held constant throughout the test Output Power (dBm) Frequency (GHz) Output Power vs. Frequency Vd = 5 V, Idq = 320 mA, Vg = -0.52 V, +25 oC Psat P1dB 200 250 300 350 400 450 500 550 -10 -8 -6 -4 -2 0 2 4 6 8 Id (mA) Output Power (dBm), Gain (dB) Input Power (dBm) Output Power, Gain, Id vs. Input Power Vd = 5 V, Idq = 320 mA, Vg = -0.52 V, +25 oC Pout Gain Id @ 14 GHz

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 4 of 13 - www.qorvo.com Performance Plots – Small Signal Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C. Output TOI (dBm) Frequency (GHz) OTOI vs. Frequency vs. Pout/Tone Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 oC 12 dBm Pout/Tone 14 dBm Pout/Tone 16 dBm Pout/Tone Id held constant throughout the test -70 -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 20 22 IM3 (dBc) Pout/Tone (dBm) IM3 vs. Pout/Tone vs. Frequency Vd = 5 V, Id = 320 mA, Vg = -0.52 V, 25 oC

12.5 GHz

13.5 GHz

14.5 GHz

15.5 GHz

Id held constant throughout the test NF (dB) Frequency(GHz) Noise Figure vs. Frequency vs. Bias Vd = 5 V, Idq = 320 mA, Vg = -0.52 V, +25 °C 5V,300mA 5V,320mA 5V,350mA Noise Figure (dB) Frequency(GHz) Noise Figure vs. Frequency vs. Bias Vd = 5-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C 4V,320mA 5V,320mA 6V,320mA 11 12 13 14 15 16 17 Gain (dB) Frequency (GHz) Gain vs. Frequency vs. Bias Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 oC 5V,300mA 5V,320mA 5V,350mA 11 12 13 14 15 16 17 Gain (dB) Frequency (GHz) Gain vs. Frequency vs. Bias Vd = 5-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C 4V,320mA 5V,320mA 6V,320mA

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 5 of 13 - www.qorvo.com Performance Plots – Noise Figure Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C. Saturated Power (dBm) Frequency (GHz) Power vs. Frequency vs. Bias Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 °C 5V,300mA 5V,320mA 5V,350mA Id held constant throughout the test Saturated Power (dBm) Frequency (GHz) Power vs. Frequency vs. Bias Vd = 4-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C 4V,320mA 5V,320mA 6V,320mA Id held constant throughout the test P1dB (dBm) Frequency (GHz) Power vs. Frequency vs. Bias Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 °C 5V,300mA 5V,320mA 5V,350mA Id held constant throughout the test P1dB (dBm) Frequency (GHz) Power vs. Frequency vs. Bias Vd = 4-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C 4V,320mA 5V,320mA 6V,320mA Id held constant throughout the test Output TOI (dBm) Frequency (GHz) OTOI vs. Frequency vs. Bias Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 oC 5V,300mA 5V,320mA 5V,350mA Id held constant throughout the test Output TOI (dBm) Frequency (GHz) OTOI vs. Frequency vs. Bias Vd = 5-6 V, Id = 320 mA, Vg = -0.52 V, +25 oC 5V,320mA 6V,320mA Id held constant throughout the test

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 6 of 13 - www.qorvo.com Performance Plots – Power Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C. 11 12 13 14 15 16 17 Gain (dB) Frequency (GHz) Gain vs. Frequency vs. Temperature Vd = 5 V, Id = 320 mA, Vg = -0.52 V - 40 °C +25 °C +80 °C Output TOI (dBm) Frequency (GHz) OTOI vs. Frequency vs. Temperature Vd = 5 V, Id = 320 mA , Vg = -0.52 V - 40 °C +25 °C +80 °C Id held constant throughout the test Saturated Output Power (dBm) Frequency (GHz) Power vs. Frequency vs. Temperature Vd = 5 V, Idq = 320 mA, Vg = -0.52 V - 40 °C +25 °C +80 °C Id held constant throughout the test P1dB (dBm) Frequency (GHz) Power vs. Frequency vs. Temperature Vd = 5 V, Idq = 320 mA, Vg = -0.52 V - 40 °C +25 °C +80 °C Id held constant throughout the test Gain (dB) Frequency (GHz) Gain Regulated vs. Frequency Vd = 5 V, Id & Vg regulated, 25 °C Nominal, Id = 320mA, Vg = -0.52V -6dB, Id = 61mA, Vg = -0.87V -12dB, Id = 29mA, Vg = -0.95V -18dB, Id = 16mA, Vg = -0.99V

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 7 of 13 - www.qorvo.com Application Circuit Bias-up Procedure Bias-down Procedure 1. Vg (externally connect Vg1, Vg2, and Vg3 together) set to -1.5 V 1. Turn off RF signal 2. Vd (externally connect Vd1, Vd2, and Vd3 together) set to +5 V 2. Reduce Vg to -1.5V. Ensure Id ~ 0 mA 3. Adjust Vg more positive until quiescent current is 320 mA, Vg = -0.52 V typical 3. Turn Vd to 0 V 4. Apply RF signal to RF Input 4. Turn Vg to 0 V 76 85 16 14 1315 RF IN RF OUT TGA2524-SM Vg2 Vg3 Vg1 Vd1 Vd3 Vd2

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 8 of 13 - www.qorvo.com Evaluation Board and Assembly connector interface is optimized for the Southwest Microwave end launch connector 1 092-01A-5. Bill of Materials Ref. Des. Component Value Manuf. Part Number C1 - C6 Surface Mount Cap. CAP 1.0UF +/-5%, 16V, 1206, COG AVX 12063C105KAT2A C7 - C12 Surface Mount Cap. CAP 0.01UF +/-5%, 16V, 0603, COG AVX 06033C103KAT2A J1, J2 RF Connector 2.92 MM RF CONNECTOR Southwest Microwave Microwave 1092-01A-5

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 9 of 13 - www.qorvo.com Mechanical Drawing & Pad Description Dimensions in mm. The package base is copper alloy and the plating material on the leads is matte Sn annealed . Part Marking: 2524: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID. Pin Number Label Description 1, 2, 4, 8, 9, 11, 12, 16 N/C No internal connection. Recommend to GND at the PCB level

3 RF IN Matched to 50 ohms, DC blocked

5 Vg1 Gate Voltage; bias network is required (VG can be tied together at PCB)

6 Vg2 Gate Voltage; bias network is required (VG can be tied together at PCB)

7 Vg3 Gate Voltage; bias network is required (VG can be tied together at PCB)

10 RF OUT Matched to 50 ohms, DC blocked

13 Vd3 Drain Voltage; bias network is required (VD can be tied together at PCB)

14 Vd2 Drain Voltage; bias network is required (VD can be tied together at PCB)

15 Vd1 Drain Voltage; bias network is required (VD can be tied together at PCB)

17 GND Ground Pedestal

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 10 of 13 - www.qorvo.com Median Lifetime Test Conditions: VD = 4 V Failure Criteria = 10% reduction in ID_MAX Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) (1) Tbase = 90 °C Vd = 5 V, Id = 320 mA, Quiescent Pdiss = 1.6 W 31.1 °C/W Channel Temperature (TCH) 140 °C Median Lifetime (TM) 2.4E06 Hrs Thermal Resistance (θJC) (1) Tbase = 90 °C Vd = 5 V, Id = 375 mA, RF Pout = 26.5 dBm Pdiss = 1.4 W 31.1 °C/W Channel Temperature (TCH) 134 °C Median Lifetime (TM) 5.6E06 Hrs Notes: 1. Thermal resistance is referenced to back of the package. 1E+04 1E+05 1E+06 1E+07 1E+08 1E+09 1E+10 1E+11 1E+12 1E+13 1E+14 1E+15 25 50 75 100 125 150 175 200 Median Lifetime, Tm (Hours) Channel Temperature, Tch (°C) Median Lifetime (Tm) vs. Channel Temperature (Tch) FET3

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 11 of 13 - www.qorvo.com Solderability 1. Compatible with the latest version of J-STD-020, Lead-free solder (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. Recommended Soldering Temperature Profile

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 12 of 13 - www.qorvo.com Tape and Reel Information Standard T/R size = 1000 pieces on a 7" x 0.5" reel. Material Cavity (mm) Distance Between Centerline (mm) Carrier Tape (mm) Cover Carrier (mm) Vendor Vendor P/N Length (A0) Width (B0) Depth (K0) Pitch (P1) Length direction (P2) Width Direction (F) Width (W) Width (W) C-Pack QFN0400 X

Ku Band GaAs Driver Amplifier Data Sheet Rev. H, May 2020 | Subject to change without notice - 13 of 13 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) 1A ESDA / JEDEC JS-001-2012 ESD – Charged Device Model (CDM) TBD ESDA / JEDEC JS-002-2014 MSL – Convection Reflow 260 °C 1 JEDEC standard IPC/JEDEC J-STD-020 Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-890-8163 Web: www.qorvo.com Email: customer.support@qorvo.com