03P4MG KERSEMI | Alldatasheet
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Technical content
03P4MG,03P6MG
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs with an average on-state current of 300 mA. The repeat peak off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
- 400 and 600 V high-withstanding-voltage series of products
- The non-repetitive withstanding voltage is a high 700 V, making it easy to harmonize the rise voltage of the surge absorber.
- High-sensitivity thyristor (I GT = 3 to 50 µ
- Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer electronic equipments and automobile electronic components ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Parameter Symbol Ratings Unit Remarks 03P4MG 03P6MG Non-repetitive Peak Reverse Voltage V RSM 700 700 V R GK = 1 kΩ Non-repetitive Peak Off-state Voltage V DSM 700 700 V R GK = 1 kΩ Repetitive Peak Reverse Voltage V RRM 400 600 V R GK = 1 kΩ Repetitive Peak Off-state Voltage V DRM 400 600 V R GK = 1 kΩ Average On-state Current I T(AV) 300 (T A = 30°C, Single half-wave, θ = 180°) mA Refer to Figure 10. Effective On-state Current I T(RMS) 470 mA − Surge On-state Current I TSM 8 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2. Fusing Current i dt 0.15 (1 ms ≤ t ≤ 10 ms) A s − Critical Rate of On-state Current of Rise dI T /dt 20 A/ µ s − Peak Gate Power Dissipation P GM 100 (f ≥ 50 Hz, Duty ≤ 10%) mW Refer to Figure 3. Average Gate Power Dissipation P G(AV) 10 mW Refer to Figure 3. Peak Gate Forward Current I FGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mA − Peak Gate Reverse Voltage V RGM
6 V −
j −40 to +125 °C − Storage Temperature T stg −55 to +150 °C − PACKAGE DRAWING (Unit: mm) 1.27 2.54 1.77 MAX. 4.2 MAX. 1.5 12.7 MIN. 5.5 MAX. 5.2 MAX. φ 0.5 Electrode connection 1: Gate 2: Anode 3: Cathode C test bench-mark Standard weight: 0.3 g #### www.kersemi.com
= 4 A −− 2.2 V Refer to Figure 1. Junction-to-case DC −− 50 °C/W Refer to Figure 14. Junction-to-ambient DC −− 230 °C/W Refer to Figure 14. Figure 1. i
Figure 14. Z