2N3996 SEMICOA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

  • Hermetically sealed TO-x metal can
  • Also available in chip configuration
  • Chip geometry 9201
  • Reference document: MIL-PRF-19500/374 Benefits
  • Qualification Levels: JAN, JANTX, and JANTXV
  • Radiation testing available Absolute Maximum Ratings TC = 25°C unless otherwise specified Parameter Symbol Rating Unit Collector-Emitter Voltage V CEO 80 Volts Collector-Base Voltage V CBO 100 Volts Emitter-Base Voltage V EBO 8 Volts Collector Current, Continuous I C 5 A Power Dissipation, TA = 25°C Derate linearly above 25°C PT 2 11.4 W mW/°C Power Dissipation, TC = 25°C Derate linearly above 25°C PT 30 300 W mW/°C Thermal Resistance RθJC 3.33 °C/W Operating Junction Temperature T J -65 to +200 °C Storage Temperature T STG -65 to +200 °C

Copyright 2002 Semicoa Semiconductors, Inc. www.SEMICOA.com 2N3996 Silicon NPN Transistor Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Base Breakdown Voltage V (BR)CBO IC = 10 µA 100 Volts Collector-Emitter Breakdown Voltage V (BR)CEO I C = 50 mA 80 Volts Collector-Emitter Cutoff Current I CEO V CE = 60 Volts 10 µA Collector-Emitter Cutoff Current ICES1 ICES1 VCE = 80 Volts VCE = 80 Volts, TA = 150°C 200 nA µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 5 Volts VEB = 8 Volts 200 nA µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 IC = 50 mA, VCE = 2 Volts IC = 1 A, VCE = 2 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 2 Volts TA = -55°C 120 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 1 A, IB = 100 mA IC = 5 A, IB = 500 mA 0.6 1.2 1.6 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 1 A, IB = 100 mA IC = 5 A, IB = 500 mA 0.25 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 1 A, f = 10 MHz 3 12 Open Circuit Output Capacitance C OBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 150 pF Switching Characteristics Parameter Symbol Test Conditions Min Typ Max Units Delay Time t d 100 ns Rise Time t r 240 ns Storage Time t s 1.4 µs Fall Time t f 300 ns Saturated Turn-On Time t ON 300 ns Saturated Turn-Off Time t OFF 1.5 µs