ZXMP6A13FTA VBSEMI | Alldatasheet

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  • Isolated Package  High Voltage Isolation = 2.5 kV RMS (t = 60 s; f = 60 Hz)  Sink to Lead Creepage Distance = 4.8 mm  P-Channel  175 °C Operating Temperature  Dynamic dV/dt Rating  Low Thermal Resistance  Lead (Pb)-free Available Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). c. I SD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)V GS = - 10 V 0.04 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S G D P-Channel MOSFET Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 5.2 ATC = 100 °C - 3.8 Pulsed Drain Currenta IDM - 21 Linear Derating Factor 0.18 W/°C Single Pulse Avalanche Energyb EAS 120 mJ Repetitive Avalanche Currenta IAR - 5.2 A Repetitive Avalanche Energya EAR 2.7 mJ Maximum Power Dissipation TC = 25 °C PD 27 W Peak Diode Recovery dV/dtc dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

G TO-236 (SOT-23) S D Top View ZXMP6A13FTA www.VBsemi.com P-Channel 60-V (D-S) MOSFET g A ll data sheet.com

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -6 5 °C/W Maximum Junction-to-Case (Drain) RthJC -5 .5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, I D = - 1 mA - - 0.060 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - - 2.5 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 µA VDS = - 48 VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) V GS = - 10 V I D = - 3.2 Ab - -0. Ω Forward Transconductance gfs VDS = - 25 V, ID = - 3.2 Ab 1.6 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 270 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -3 1- Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = - 10 V ID = - 4.7 A, VDS = - 48 V, see fig. 6 and 13b -- 1 2 nC Gate-Source Charge Qgs -- 3 . 8 Gate-Drain Charge Qgd -- 5 . 1 Turn-On Delay Time td(on) VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD= 4.0 Ω, see fig. 10b -1 1- ns Rise Time tr -6 3- Turn-Off Delay Time td(off) -9 .6 - Fall Time tf -3 1- Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . 5- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- - 5 . 2 A Pulsed Diode Forward Current a ISM -- - 2 1 Body Diode Voltage VSD TJ = 25 °C, IS = - 5.2 A, VGS = 0 Vb -- - 5 .5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µsb - 80 160 ns Body Diode Reverse Recovery Charge Q rr - 0.096 0.19 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 2 - Typical Output Characteristics, TC= 175 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Wavefo rms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. - 10 V VDS VDD VGS 10 % 90 % VDS td(on) tr td(off) tf R G IAS 0.01 Ωtp D.U.T. L VDS +- VDD - 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charg e Waveform Fig. 13b - Gate Charge Test Circuit QGS QGD QG VG Charge - 10 V D.U.T. - 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

Fig. 14 - For P-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = - 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period - - + * VGS = - 5 V for logic level and - 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD

  • dV/dt controlled by RG
  • ISD controlled by duty factor "D"
  • D.U.T. - device under test D.U.T. Circuit layout considerations
  • Low stray inductance
  • Ground plane
  • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) ZXMP6A13FTA www.VBsemi.com g A ll data sheet.com

All products due to improv e reliability, function or design or for other reasons, product specifications and data are subject to chang e without notice. Taiwan VBsemi Electronics C o., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collec tively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contai ned in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no gua rantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any ap plication and all liability arising out of or use of any products; (2) any and all liability, including but not limit ed to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular p urpose, non-infringement and merchantability guarantee. Statement on certain typ es of applications are based on knowledge of the product is often used in a typical application of the gene ral product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the pro ducts described in the specification is appropriate for use in a particular application. Parameter data sheets an d technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts valid ated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms a nd conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining appl ications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sa le of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your au thorized Taiwan VBsemi people who are related to product design applications and other terms and conditi ons in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise , to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referr ed to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronic s Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meet s the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6 . 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE) -modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethatsomedocu mentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products i dentified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still r efer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcomplia ncewithIEC61249-2-21standardlevelJS709A. ZXMP6A13FTA www.VBsemi.com A ll data sheet.com