ZXMP3A16GTA

ZXMP3A16GTA VBSEMI | Alldatasheet

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Technical content

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition r e n c h F E T® Power MOSFET  100 % Rg Tested  100 % UIS Tested  Compli ant to RoHS Directive 2002/95/EC

APPLICATIONS

 Load Switches, Adap to r Switch - Notebook PCs PRODUCT SUMMARY VDS (V) R DS(on) ()I D (A)d Qg (Typ.) - 35 0.050 at VGS = - 10 V - 6.2 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 Notes: a. Surface mounted on 1" x 1" F R 4 board. b. t = 10 s. c. Maximum under steady stat e conditions is 85 °C/W. d. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless o therwise noted) Parameter Symbol Limit Un it Drain-Source Voltage VDS - 35 V Gate-Source Voltage VGS ± 20 Continuous Drain C urrent (TJ = 150 °C) TC = 25 °C ID - 6.2 A TC = 70 °C - 4.8 TA = 25 °C - 4.5a, b TA = 70 °C - 3.4a, b Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 3.5 TA = 25 °C - 2.1a, b Avalanche Current L = 0.1 mH IAS - 10 Single-Pulse Avalanche Energy EAS 5m J Maximum P ower Dissipation TC = 25 °C PD 4.2 W TC = 70 °C 2.7 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Ra nge TJ, Tstg - 55 to 150 °C THERMAL RE SISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 10 s RthJA 40 50 °C/W Maximum Junction-to-Foot Stead y State RthJF 24 30 S G D P-Channel MOSFET SOT-223 G D S D P-Channel 35 V (D-S) MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

Notes: a. Pu lse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbol Te st Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 35 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 42 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 4.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 35 V, VGS = 0 V - 1 µA VDS = - 35 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) V DS  - 10 V, VGS = - 10 V - 10 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 5 A 0.040 0.050 VGS = - 4.5 V, ID = - 4 A 0.048 0.060 Forward Transconductancea gfs VDS = - 10 V, ID = - 5 A 14 S Dynamicb Input Capacitance Ciss VDS = - 20 V, VGS = 0 V, f = 1 MHz 970 pFOutput Capacitance Coss 12 0 Reverse Transfe r Capacitance Crss 95 Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A 23 35 nC VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A 9.8 16 Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 5.2 Gate Resistance Rg f = 1 MHz 1.0 5 .5 11  Tur n-On Delay Time td(on) VDD = - 20 V, RL = 4  ID  - 5 A, VGEN = - 10 V, Rg = 1  71 4 ns Rise Time tr 12 24 Turn-Off DelayTime td(off) 30 60 Fall Tim e tf 91 8 Tur n-On Delay Time td(on) VDD = - 20 V, RL = 4  ID  - 5 A, VGEN = - 4.5 V, Rg = 1  44 80 Rise Time tr 33 60 Turn-Off DelayTime td(off) 28 55 Fall Tim e tf 13 25 Drain-Source Bod y Diode Characteristics Continuous Source-Drain Diode Current I S TC = 25 °C - 3.5 A Pulse Diode Forward C urrent ISM - 20 Body Diode Voltage VSD IS = - 2 A, VGS = 0 V - 0.76 - 1.2 V Body Diode Rev erse Recovery Time t rr IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 27 50 ns Body Diode Reverse Recov ery Charge Q rr 19 35 nC Reverse Recov ery Fall Time ta 14 ns Reverse Recovery Rise Time tb 13 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) Output Characteristics On-Res istance vs. Drain Current Gate Charge 2.5 VGS =1 0Vt h ru VGS =4V VGS =3V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 VGS =1 0V VGS =4 . 5V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) ID =5A VDS =2 0V VDS =3 0V VDS =1 0V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Capacitance On-Resist ance vs. Junction Temperature 012345 TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Crss 320 640 960 1280 1600 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =5A VGS =4 . 5V VGS =1 0V TJ - Junction Temperature (°C) (Normalized) RDS(on) - On-Resistance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C , unless otherwise noted) Source-Drain Diode Fo rward Voltage Threshold Voltage 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) - 0.4 - 0.2 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID =1m A ID = 250 μA VGS(th) Variance (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 02 4 6 8 10 TJ =2 5 ° C TJ = 125 °C ID =5A RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) Power (W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area 0.01 100 100 0.01 0.1 10 ms 0.1 1 10 TA = 25 °C Single Pulse 1m s DC BVDSS Limited 10 s 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Dera ting* 0.0 1.6 3.2 4.8 6.4 8.0 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Fo ot 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Deratin g, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C , unless otherwise noted) Normalized Thermal Transient Impedan ce, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0 Single Pulse 0.02 0.05 Normalized Thermal Transient Imp edance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

SOT-223 (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensio ns are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. D B 0.10 (0.004) M C M H 0.10 (0.004) M C B M 0.20 (0.008) M C A M 0.10 (0.004) M C B M 3 x B e 1 2 3 A E C A 0.08 (0.003) θ 4 x L 4 x C MILLIMETERS INCHES A 1.55 1.80 0.061 0.071 B 0.6 5 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 0.146 e 2.30 BSC 0.0905 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 0.287 L 0.91 - 0.036 - L1 0.061 BSC 0.0024 BSC θ - 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw ZXMP3A16GTA A ll data sheet.com