ZXMN2088DE6TA VBSEMI | Alldatasheet
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Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.022 at VGS = 4.5 V 1.8 nC 0.028 at VGS = 2.5 V 5.0 TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 N-Channel MOSFET G 1 S 1 N-Channel MOSFET G 2 D 2 S 2 Notes: a. T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 4.0 TA = 25 °C 3.5b, c TA = 70 °C 2.8b, c Pulsed Drain Current IDM 18 Continuous Source-Drain Diode Current TC = 25 °C IS 1.17 TA = 25 °C 0.95b, c Maximum Power Dissipation TC = 25 °C PD 1.6 WTC = 70 °C 1.0 TA = 25 °C 1.14b, c TA = 70 °C 0.73b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s R thJA 93 110 °C/WMaximum Junction-to-Foot Steady State RthJF 75 90
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET 100 % R g Tested Compliant to RoHS Directive 2002/95/EC D ZXMN2088DE6TA www.VBsemi.com 6.0 6 0 g A ll data sheet.com
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the oper ati onal sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 29 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 10 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 3.4 A 0.0222 ΩVGS = 2.5 V, ID = 3.0 A 0.028 Forward Transconductancea gfs VDS = 10 V, ID = 3.4 A 10 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 400 pFOutput Capacitance Coss 55 Reverse Transfer Capacitance Crss 26 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 3.4 A 3.7 6 nCVDS = 10 V, VGS = 4.5 V, ID = 3.4 A 1.8 3 Gate-Source Charge Qgs 0.74 Gate-Drain Charge Qgd 0.42 Gate Resistance Rg f = 1 MHz 1 5 10 Ω Tur n-On Delay Time td(on) VDD = 10 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 10 20 ns Rise Time tr 15 30 Turn-Off Delay Time td(off) 10 20 Fall Time tf 10 20 Tur n-On Delay Time td(on) VDD = 10 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 51 0 Rise Time tr 15 30 Turn-Off Delay Time td(off) 10 20 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1.2 A Pulse Diode Forward Current ISM 18 Body Diode Voltage VSD IS = 2.7 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 10 20 ns Body Diode Reverse Recovery Charge Qrr 41 0 n C Reverse Recovery Fall Time ta 6 ns Reverse Recovery Rise Time tb 4 ZXMN2088DE6TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge VGS =8 Vt hru3V VGS =2V VGS =1V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.00 0 3 6 9 12 15 VGS = V VGS = V - On-Resistance (Ω)R DS(on) ID - Drain Current (A) 01234 VDS =1 4V ID =3 . 4A VDS =6V VDS =1 0V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss 100 200 300 400 500 600 0 5 10 15 20 25 30 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 15 ID =3 . 4A VGS = V,V GS =4 . 5V TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) ZXMN2088DE6TA www.VBsemi.com 2.5 2.5 4.5 0.030 0.020 0.010 0.040 0.050 g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA (V) VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 02468 1 0 TJ =2 5 ° C ID =3 . 4A TJ = 125 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited 1m s 100 μs 10 ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID DC 1s ,1 0s 100 ms ZXMN2088DE6TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power Derating 0.0 0.4 0.8 1.2 1.6 25 50 75 100 125 150 T C - Foot Temperature (°C) Power Dissipation (W) ZXMN2088DE6TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =1 5 0 ° C / W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 ZXMN2088DE6TA www.VBsemi.com g A ll data sheet.com
L 5 4 R R C 0.15 M B A b C 0.08
0.17 Ref
-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 ZXMN2088DE6TA www.VBsemi.com g A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) ZXMN2088DE6TA www.VBsemi.com g A ll data sheet.com
All products due to improve reliability, function or design or for othe r reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and a ll persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no respon sibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted b y applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or inc idental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantabilit y guarantee. Statement on certain types of applications are based on knowledge of t he product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It i s the customer's responsibility to verify specific product features in the products described in the specification is appr opriate for use in a particular application. Parameter data sheets and technical specifications can be provided m ay vary depending on the application and performance over time. All operating parameters, including typical par ameters must be made by customer's technical experts validated for each customer application. Product s pecifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not inten ded for use in medical, life saving, or life sustaining applications or any other application. Wherein VBs emi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applic ations using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products w ithout a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective rep resentatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive o f the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous s ubstances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirec tive2002/95/EC.We confirm that all products identified as consistent with the Directive 2002 /95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products co mply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please n ote that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are su re that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. ZXMN2088DE6TA www.VBsemi.com A ll data sheet.com