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P-channel MOSFET -20V, -0.5A Drain Gate Source ■ EQUIVALENT CIRCUIT ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (DC) ID -0.5 A Drain Current (Pulse) (*1) IDP -1 A Channel Power Dissipation (*2) Pd 0.35 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~150 ℃ (*1) PW≦10μs,duty cycle≦1% (*2) When implemented on a PCB defined by JESD51-7 ETR11074-001 ■FEATURES On-State Resistance : RDS(on)＝1.3Ω@VGS =-4.5V Driving voltage : -1.8V Environmentally Friendly : EU RoHS Compliant, Pb Free ■APPLICATIONS

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  • SOT-323-3A ■ PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP221P05013R-G * SOT-323-3A 3,000 pcs/ Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant

■ELECTRICAL CHARACTERISTICS Ta=25℃ PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage V(BR)DSS ID= -100μA, VGS=0V -20 - - V Drain-Source Leakage Current IDSS VDS= -20V, VGS= 0V - - -1 μA Gate-Source Leakage Current IGSS VGS= ±8V, VDS= 0V - - ±10 μA Gate Threshold Voltage VGS(off) ID= -250uA, VDS= VGS -0.4 -0.8 -1.3 V Drain-Source On Resistance RDS(on) VGS= -4.5V, ID= -300mA - 0.6 1.3 Ω VGS= -2.5V, ID= -300mA - 1 1.9 Ω VGS= -1.8V, ID= -10mA - 1.5 2.7 Ω Input Capacitance Ciss VDS= -10V, VGS= 0V f=1MHz - 60 - pF Output Capacitance Coss - 19 - pF Reverse Transfer Capacitance Crss - 13 - pF Turn-on Delay Time td(on) VDD= -10V, ID= -200mA VGS= -4.5V - 18 - ns Rise Time tr - 35 - ns Turn-off Delay Time td(off) - 80 - ns Fall Time tf - 75 - ns Diode Forward Voltage VSD IS= -100mA, VGS= 0V - -0.75 -1.2 V ■NOTES ON USE 1. Please use this IC within the absolute maximum ratings. Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 2. Torex places an importance on improving our products and their reliability. We request that users incorporate fail -safe designs and post -aging protection treatment when using Torex products in their systems.

■TYPICAL PERFORMANCE CHARACTERISTICS (1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Gate-Source Voltage (3) Drain-Source On Resistance vs. Gate-Source Voltage (4) Drain-Source On Resistance vs. Ambient Temperature (5) Drain-Source On Resistance vs. Drain Current (6) Source Current vs. Diode Forward Voltage -0.8 -0.6 -0.4 -0.2 Drain Current: ID (A) Drain-Source Voltage: VDS (V) -1.8V VGS=-1.5V Ta=25℃ -2.5V -3.5V -4.5V 0.001 0.01 0.1 -3-2-10 Drain Current : ID (A) Gate-Source Voltage: VGS (V) Ta=125℃ 25℃ VDS=-10V -25℃ -5-4-3-2-10 Drain-Source On Resistance: RDS(on) (Ω) Gate-Source Voltage: VGS (V) ID=-300mA Ta=25℃ 0.0 1.0 2.0 3.0 -50 0 50 100 150 Drain-Source On Resistance: RDS(on) (Ω) Ambient Temperature: Ta (℃) -4.5V -2.5V VGS=-1.8V 0.0 1.0 2.0 3.0 Drain-Source On Resistance: RDS(on) (Ω) Drain Current: ID (A) VGS=-4.5V Ta=25℃ -2.5V -1.8V 0.001 0.01 0.1 Source Current: IS (A) Diode Forward Voltage: VSD (V) Ta=125℃ -25℃ 25℃

■TYPICAL PERFORMANCE CHARACTERISTICS (7) Ciss, Coss, Crss vs. Drain-Source Voltage (8) Area of Safe Operation 100 1000 -20-15-10-50 Capacitance: Ciss, Coss, Crss (pF) Drain-Source Voltage: VDS (V) Ciss f=1MHz, Ta=25℃ Coss Crss 0.01 0.1 0.1 1 10 100 Drain Current: ID (A) Drain-Source Voltage: VDS (V) DC Operation RDS(on) (VGS=-4.5V) Limit Ta=25℃ Single pulse Mounted on a FR4 board (8700mm2 x 1.6mm) 100µs - - - - 1ms 10ms 100ms

■PACKAGING INFORMATION For the latest package information go to, www.torexsemi.com/technical-support/packages PACKAGE OUTLINE / LAND PATTERN THERMAL CHARACTERISTICS SOT-323-3A SOT-323-3A PKG JESD51-7 Board SOT-323-3A Power Dissipation ■ MARKING RULE シンボル 品名表記例 ① ② ③ 2 1 P XP221P0501**-G ①,②,③represents product series ④,⑤ represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ repeated (G，I，J，O，Q，W excluded) *No character inversion used ① ② ③ ④ ⑤ 1 2

  • SOT-323-3A SOT-323-3A
  1. The product and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. The information in this datasheet is intended to illustrate the operation and characteristics of our products. We neither make warranties or representations with respect to the accuracy or completeness of the information contained in this datasheet nor grant any license to any intellectual property rights of ours or any third party concerning with the information in this datasheet. 3. Applicable export control laws and regulations should be complied and the procedures required by such laws and regulations should also be followed, when the product or any information contained in this datasheet is exported. 4. The product is neither intended nor warranted for use in equipment of systems which require extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss of human life, bodily injury, serious property damage including but not limited to devices or equipment used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and other transportation industry and 5) safety devices and safety equipment to control combustions and explosions. Do not use the product for the above use unless agreed by us in writing in advance. 5. Although we make continuous efforts to improve the quality and reliability of our products; nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal injury and/or property damage resulting from such failure, customers are required to incorporate adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention features. 6. Our products are not designed to be Radiation-resistant. 7. Please use the product listed in this datasheet within the specified ranges. 8. We assume no responsibility for damage or loss due to abnormal use. 9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex Semiconductor Ltd in writing in advance. TOREX SEMICONDUCTOR LTD.