XP133A1330SR TOREX | Alldatasheet

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■General Description ■Features ■Pin Configuration ■Equivalent Circuit ■Absolute Maximum Ratings ■Pin Assignment ■Applications １２３４５６７８S1 SOP-8(TOP VIEW) PIN NUMBER PIN NAME FUNCTION Source Source Gate 7~8 5~6 Gate Drain Drain NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.03Ω(max) NUltra High-Speed Switching NTwo FET Devices Built-in GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP133A1330SR is an N-Channel Power MOS FET with low on- state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.03Ω( Vgs = 4.5V ) : Rds (on) = 0.04Ω( Vgs = 2.5V ) : Rds (on) = 0.07Ω( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 １２３４５６７８N-Channel MOS FET( 2 FET devices built-in ) Ta=25OC SYMBOL RATINGS UNITS Vdss V Vgss + 8 V Id A Idp A Idr A Pd W Tch 150 OC Tstg - 55 ~ 150 OC ( note ) : When implemented on a glass epoxy PCB PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature 11S_21XP133A1330SR 02.9.12 4:01 PM ページ 767

■Electrical Characteristics DC Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = 20V , Vgs = 0V µA Gate-Source Leakage Current Igss Vgs = ± 8V , Vds = 0V ± 1 µA Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 0.5 1.2 V Id = 3A , Vgs = 4.5V 0.025 0.03 Ω Drain-Source On-state Resistance Rds ( on ) Id = 3A , Vgs = 2.5V 0.03 0.04 Ω ( note ) Id = 1A , Vgs = 1.5V 0.045 0.07 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 950 pF Output Capacitance Coss Vds = 10V , Vgs = 0V 430 pF Feedback Capacitance Crss f = 1 MHz 180 pF Switching Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) ns Rise Time tr Vgs = 5V , Id = 3A ns Turn-off Delay Time td ( off ) Vdd = 10V ns Fall Time tf ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a glass epoxy ( channel-ambience ) resin PCB Id = 3A , Vds = 10V | Yfs | S °C / W 62.5 Rth ( ch-a ) Vf If = 6A , Vgs = 0V V 0.85 1.1 11S_21XP133A1330SR 02.9.12 4:01 PM ページ 768

■Typical Performance Characteristics 0.5 1.5 2.5 Ta=25℃, Pulse Test Vgs=1V 1.5V 2.5V 0.5 1.5 2.5 Vds=10V, Pulse Test 125℃25℃0 0.02 0.04 0.06 0.08 0.1 Id=6A 0.01 0.1 Vgs=1.5V DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V) Drain Current:Id (A) Drain Current:Id (A) DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Ta=-55℃Ta=25℃, Pulse Test Ta=25℃, Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Drain-Source On-State Resistance:Rds(on) (Ω) Drain-Source On-State Resistance:Rds(on) (Ω) 4.5V 2.5V Gate-Source Voltage:Vgs (V) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.02 0.04 0.06 0.08 0.1 -50 100 150 Ambient Temp. :Topr (℃) 2.5V Vgs=1.5V Id=3A 4.5V -0.6 -0.4 -0.2 0.2 0.4 0.6 -50 100 150 Ambient Temp. :Topr (℃) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Drain-Source On-State Resistance:Rds(on) (Ω) Pulse Test Vds=10V, Id=1mA Gate-Source Cut-Off Voltage Variance:Vgs(off) Variance (V) 3A, 6A 3A, 6A XP133A1330SR 769 11S_21XP133A1330SR 02.9.12 4:01 PM ページ 769

Capacitance:C (pF) Coss Ciss Crss 100 1000 tr td(on) td(off) tf Drain-Source Voltage:Vds (V) Drain Current:Id (A) Vgs=5V, Vdd≒10V, PW=10μs, duty≤1%, Ta=25℃SWITCHING TIME vs. DRAIN CURRENT Vgs=0V, f=1MHz, Ta=25℃Switching Time:t (ns) CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vds=10V, Id=6A, Ta=25℃0 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-a)=62.5℃/W, (Implemented on a glass epoxy PCB) Pulse Width:PW (s) Standardized Transition Thermal Resistance:γs(t) Single Pulse Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V) Ta=25℃, Pulse Test Reverse Drain Current:Idr (A) Gate-Source Voltage:Vgs (V) GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE 4.5V 1.5V 2.5V Vgs=0V, -4.5V 11S_21XP133A1330SR 02.9.12 4:01 PM ページ 770