XP135A1145SR

XP135A1145SR TOREX | Alldatasheet

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91"43 1PXFS.04'&5 u ˗ N-Channel/P-Channel Power MOS FET ˙ Applications ˗ DMOS Structure ˔Notebook PCs ˗ Low On-State Resistance : 0.045Ω max (Nch) 0.110Ω max (Pch) ˔Cellular and portable phones ˗ Ultra High-Speed Switching ˔On - board power supplies ˗ SOP - 8 Package ˗ Two FET Devices Built-in ˙ General Description ˙ Features The XP135A1145SR is a N-Channel/P-Channel Power MOS FET Low on-state resistance (Nch) : with low on-state resistance and ultra high-speed switching Low on-state resistance (Pch) : Two FET devices are built-into the one package. Ultra high-speed switching Because high-speed switching is possible, the IC can be efficiently Operational Voltage : 4.5V (Nch) : -4.5V (Pch) set thereby saving energy. High density mounting : SOP - 8 The small SOP-8 package makes high density mounting possible. ˙ Pin Configuration ˙ Pin Assignment PIN NUMBER PIN NAME S1 Source (Nch) G1 Gate (Nch) S2 Source (Pch) D2 G2 Gate (Pch) D2 Drain (Pch) D1 Drain (Nch) ˙ Equivalent Circuit ˙ Absolute Maximum Ratings Ta=25O C SYMBOL RATINGS UNITS Vdss 30 V Vgss ʶ20 V Id 6 A Idp 20 A Idr 6 - 30 Nch Pch ʶ20 - 4 - 16 - 4 A Pd 2 W Tch 150 O C Tstg - 55 to 150 O C N-Channel/P - Channel MOS FET ( 2 devices built-in ) ( note ) : When implemented on a glass epoxy PCB FUNCTION PARAMETER 5 - 6 7 - 8 Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature SOP - 8 Top View characteristics. Rds (on) = 0.033Ω ( Vgs = 10V ) Rds (on) = 0.045Ω ( Vgs = 4.5V ) Rds (on) = 0.065Ω ( Vgs = -10V ) Rds (on) = 0.110Ω ( Vgs = -4.5V ) ̐ ̑

91"43 1PXFS.04'&5 u ˙ Electrical Characteristics DC characteristics (P-Channel Power MOS FET) Ta=25O C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = - 30 , Vgs = 0V - 10 µ A Gate-Source Leakage Current Igss Vgs = ± 20 , Vds = 0V ± 1 µ A Gate-Source Cut-off Voltage Vgs (off ) Id = -1mA , Vds = -10V - 1 - 2.5 V Drain-Source On-state Resistance Id = - 2A , Vgs = -10V 0.055 0.065 Ω ( note ) Id = - 2A , Vgs = - 4.5V 0.09 0.11 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25O C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 680 pF Output Capacitance Coss Vds = - 10V , Vgs = 0V 450 pF Feedback Capacitance Crss f = 1 MHz 170 pF Switching characteristics Ta=25O C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) 15 ns Rise Time tr Vgs = - 5V , Id = - 2A 20 ns Turn-off Delay Time td ( off ) Vdd = - 10V 30 ns Fall Time tf 20 ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a glass epoxy ( channel - surroundings ) resin PCB Id = - 2A , Vds = - 10V| Yfs | Rds ( on ) O C / W62.5Rth ( ch - a ) Vf If = - 4A , Vgs = 0V V - 0.85 - 1.1

u ˙ Electrical Characteristics DC characteristics (N-Channel Power MOS FET) Ta=25O C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = 30 , Vgs = 0V 10 µ A Gate-Source Leakage Current Igss Vgs = ± 20 , Vds = 0V ± 1 µ A Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 1.0 2.5 V Drain-Source On-state Resistance Id = 3A , Vgs = 10V 0.026 0.033 Ω ( note ) Id = 3A , Vgs = 4.5V 0.035 0.045 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25O C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 620 pF Output Capacitance Coss Vds = 10V , Vgs = 0V 350 pF Feedback Capacitance Crss f = 1 MHz 120 pF Switching characteristics Ta=25O C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) 15 ns Rise Time tr Vgs = 5V , Id = 3A 20 ns Turn-off Delay Time td ( off ) Vdd = 10V 30 ns Fall Time tf 10 ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a glass epoxy ( channel - surroundings ) resin PCB Id = 3A , Vds = 10V| Yfs | Rds ( on ) S12 O C / W62.5Rth ( ch - a ) Vf If = 6A , Vgs = 0V V 0.85 1.1

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