SF1601G TOREX | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: Molded plastic TO-220AB Heatsink /hexstar2 High surge current capability /hexstar2 Weight: 2.03 grams /hexstar2 Polarity:Color band denotes cathode method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220AB Unit : inch (mm) SF1601G thru SF1608G Pb Free Plating Product SF1601G thru SF1608G
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Application /hexstar2 Automotive Environment|DC Motor Control /hexstar2 Plating Power Supply|UPS /hexstar2 Amplifier and Sound Device System .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Pb -55 to + 150 SF1601G SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 50 100 200 140 200 400 35 70 280 50 100 400 600 420 600 16.0 10.0 175 1.3 1.70.98 250 2.2 UNIT V V V V A A uA uA o C pF o CW nS 300 210 300 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 o C Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =100 o C Half sine-wave superimposed on rated load (JEDEC method) @ 8.0 A At Rated DC Blocking Voltage @T J =125 o C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range 150 "A"Common Anode Suffix "D"Anode and Cathode Coexistence Suffix SF1601GA SF1601GD Positive Negative Doubler Common Cathode Case Case Case Common Anode Series Connection Suffix "A" Suffix "D" Common Cathode SF1602G SF1602GA SF1602GD SF1604G SF1604GA SF1604GD SF1605G SF1605GA SF1605GD SF1606G SF1606GA SF1606GD SF1608G SF1608GA SF1608GD
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 1.0 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2 SF1601G-SF1604G SF1605G-SF1606G SF1608G SF1601G thru SF1608G