XP133A0175SR

XP133A0175SR TOREX | Alldatasheet

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■General Description ■Features ■Pin Configuration ■Equivalent Circuit ■Absolute Maximum Ratings ■Pin Assignment ■Applications The XP133A0175SR is an N-Channel Power MOS FET with low on- state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.048Ω (Vgs=10V) : Rds(on)=0.075Ω (Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOP-8 GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.075Ω(max) NUltra High-Speed Switching NTwo FET Devices Built-in SOP-8(TOP VIEW) N-Channel MOS FET(2 devices built-in) PIN NUMBER PIN NAME FUNCTION Source Source Gate 7~8 5~6 Gate Drain Drain PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg ±20 150 -55~150 V V A A A W SYMBOL RATINGS UNITS Ta=25°C When implemented on a glass epoxy PCB Note: 11S_22XP133A0175SR 02.9.12 4:01 PM ページ 771

■Electrical Characteristics DC Characteristics Ta=25: PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 1.0 2.5 V 0.075 Id=3A, Vgs=4.5V Ω Gate-Source Leakage Current Igss µA Forward Transfer Admittance (note) S Body Drain Diode Forward Voltage 0.85 1.1 V Drain Cut-off Current Idss µA Vf Vds=30V, Vgs=0V Id=1mA, Vds=10V Id=3A, Vds=10V If=5A, Vgs=0V Vgs=±20V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) Ω Id=3A, Vgs=10V 0.048 0.06 0.04 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 130 340 520 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic Characteristics Ta=25: Effective during pulse test. Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns ns Vgs=5V, Id=3A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching Characteristics Ta=25: PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-ambience) 62.5 :/W Implement on a glass epoxy resin PCB SYMBOL CONDITIONS MAX MIN TYP Thermal Characteristics 11S_22XP133A0175SR 02.9.12 4:01 PM ページ 772

■Typical Performance Characteristics 10V 4.5V 3.5V Vgs＝2.5V DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25°C Drain Current:Id (A) Drain-Source Voltage:Vds (V) Topr＝25℃-55℃125℃DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V Drain Current:Id (A) Gate-Source Voltage:Vgs (V) 0.15 0.1 0.05 Id＝3A DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25°C Drain-Source On-State Resistance :Rds (on) (Ω) Gate-Source Voltage:Vgs (V) 0.1 0.01 10V Vgs＝4.5V DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25°C Drain-Source On-State Resistance :Rds (on) (Ω) Drain Current:Id (A) 0.15 0.05 0.1 -60 -30 120 150 Id＝5A 3A,5A 10V Vgs＝4.5V DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test Drain-Source On-State Resistance :Rds (on) (Ω) Ambient Temp.:Topr (°C) 1.0 0.5 0.0 -0.5 -1.0 -60 -30 120 150 GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds=10V, Id=1mA Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (°C) XP133A0175SR 773 11S_22XP133A0175SR 02.9.12 4:01 PM ページ 773

CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz Capacitance:C (pF) Drain-Source Voltage:Vds (V) 1000 100 0.1 tf tr td（off）td（on）SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd≒10V, PW=10µsec. duty≤1% Switching Time:t (ns) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=5A Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) 0.2 0.4 0.6 0.8 0,-4.5V Vgs＝4.5V REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Reverse Drain Current:Id (A) Source-Drain Voltage:Vsd (V) 0.0001 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 100 STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB) Standardized Transition Thermal Resistance:γs(t) Pulse Width:PW (sec) Single Pulse 11S_22XP133A0175SR 02.9.12 4:01 PM ページ 774