XP202A0003PR_12 TOREX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
P-channel 4V (G-S) MOSFET PRODUCT NAME PACKAGE ORDER UNIT XP202A0003PR-G SOT-89 1,000/Reel PARMETER SYMBOL RATINGS UNITS Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (DC) ID -5 A Drain Current(Pulse) IDP -20 A Channel Power Dissipation Pd 1.5 W Channel Temperature Tch +150 ˆ Storage Temperature Tstg - 55 ~ +150 ˆ LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP . MAX. UNITS Drain-Source Breakdown Voltage V(BR)DSS I D=-1mA, VGS=0V -30 - - V Drain-Source Cut-Off Current IDSS V DS=-30V, VGS=0V - - -1 ЖA Gate-Source Leakage Current IGSS V GS=ʶ16V,VDS=0V - - ±10 ЖA Gate-Source Cut-Off Voltage VGS(off) V DS=-10V,ID=-1mA -1.2 - -2.6 V Forward Transfer Admittance |yfs| V DS=-10V,ID=-3A 2.8 8.0 - S RDS(ON)1 I D=-3A,VGS=-10V - 47 59 m Њ RDS(ON)2 I D=-1.5A,VGS=-4.5V - 70 100 m Њ Drain-Source ON Resistance RDS(ON)3 I D=-1.5A,VGS=-4V - 80 113 m Њ Input Capacity Ciss V DS=-10V,f=1MHz - 450 - pF Output Capacity Coss V DS=-10V,f=1MHz - 110 - pF Feedback capacity Crss V DS=-10V,f=1MHz - 80 - pF Turn on Delay time td(on) - 7 - ns Rise Time tr - 8 - ns Turn off Delay Time td(off) - 31 - ns Fall Time tf - 6 - ns All Gate Charge Amount Qg - 10 - nC Gate Source Charge Amount Qgs - 1.5 - nC Gate Drain Charge Amount Qgd - 2.5 - nC Diode Forward Voltage VSD I S=-5A, VGS=0V - -0.9 -1.2 V ・Low On Resistance ・Ultra High Speed Switching ・4V Driving ・EU RoHS Compliant, Pb Free ETR1129-003 ˔çSwitching ˙FEATURESççççççççç ˙çELECTRICAL CHARACTERISTICS ˙APPLICATION ˙༻్ççççççççç ˙ABSOLUTE MAXIMUM RATINGS ˙PIN CONFIGURATION 1.Gate 2.Drain 3.Source SOT-89(TOP VIEWʣ ˙PRODUCT NAME PWʽ10Жs,duty cycleʽ1% Ceramic Board (250mm ʷ0.8mm) Mounting The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. The high-melting solder paste (lead-containing) is used as attachment.
ç ç çççççç˔ SOT-89ç ççççççççççççççççççççççççççççççç 2.5±0.1 4.0±0.25 1.5±0.1 (0.1) (0.4)1.0±0.2 çççççççççççççççççç ççç MARK PRODUCT SERIES ççççççççççççççççççççççç ççççççççççççççççççççç MARK ᶄ ᶅ A D 00 03 XP202A0003**-G ççççççççççççççççççççççç ˙EQUIVALENT CIRCUIT ˙SWITCHING-TIME TEST CIRCUIT td(on) td(off)tr tf VI VO 10% 90% 90% 10% 90% 10% 50Ω RL VO VI Oscilloscope Oscilloscope S G D ˙PACKAGING INFORMATION 123 PRODUCT GROUP PRODUCT NUMBER PRODUCT SERIES ˙MARKING RULE ᶃ represents product series ᶄ ᶅ represents product group and number ᶆɼᶇ represents production lot number 0 to 9, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ repeated (G, I, J, O, Q, W excluded) *No character inversion used
ççççççççççççççççççççççççççççççççççç (1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Drain-Source Voltage (4) Drain-Source On-State Resistance vs. Ambient Temperature (5) Forward Transfer Admittance vs. Drain Current (6) Source Current vs. Diode Forward Voltage XP202A0003PR -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Drain-Source Voltage： V DS (V) Drain Current： ID (A) VGS= -2.5V -3.0V -3.5V -4.0V -4.5V -6.0V -10.0V -16.0V Ta= 25℃ XP202A0003PR -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Gate-Source Voltage： V GS (V) Drain Current： ID (A) VDS= -10V， Pulse Test Ta= 25℃ Ta= -25℃ Ta= 75℃ XP202A0003PR 100 120 140 160 180 200 Gate-to-Source Voltage： V GS (V) Static Drain-source On-State Resistance：RDS(on) （ｍΩ) Ta= 25℃ ID= -3.0A ID= -1.5A XP202A0003PR 100 120 140 -50 -25 0 25 50 75 100 125 150 Ambient Temperature： Ta (℃) Static Drain-source On-State Resistance： RDS(on) （ｍΩ) VGS= -10V, ID= -3A VGS= -4.5V, ID= -1.5A VGS= -4.0V, ID= -1.5A XP202A0003PR 0.1 100 0.01 0.1 1 10 Drain Current： ID (A) Forward Transfer Admittance ： |yfs| (S) Ta= -25℃ Ta=25℃ Ta=75℃ VDS= -10V XP202A0003PR 0.01 0.1 Diode Forw ard Voltage： VSD (V) Source Current： IS (A) Ta= 75℃ Ta= 25℃ Ta= -25℃ VGS= 0V ˙TYPICAL PERFORMANCE CHARACTERISTICS (3) Drain-Source On-State Resistance vs. Gate-Source Voltage
ççççç (9) Gate-Source Voltage vs. Gate Charge (7) Switching Time vs. Drain Current (8) Ciss, Coss, Crss vs. Drain-Source Voltage (10) Area of Safe Operation XP202A0003PR -10 0123456789 1 0 Gate Charge： Qg (nc) Gate-Source Voltage： VGS (V) VDS= -15V， ID= -5A XP202A0003PR 100 1000 0 5 10 15 20 25 30 Drain - Source Voltage： VDS (V) Ciss, Coss, Crss (pF ) f=1MHz Cis s Cos s Crs s XP202A0003PR 0.01 0.1 100 0.01 0.1 1 10 100 Drain-Source Voltage : VDS (V) Drain Current : ID (A) 1000ms 100ms 10ms 1ms 0.1ms Ta=25oC Single pulse When mounted on ceramic substrate (250mm2 X 0.8mm) ID=-20A ĖķĬĹĨĻİĶĵçİĵçĻįİĺçĨĹĬĨçİĺ ijİĴİĻĬīĩŀçęDSïĶĵð ID=-5A DC Operation XP202A0003PR 100 0.1 1 10 Drain Current： ID (A) Switching Time： t (ns) td(on) tr td(off) tf VGS= -10V, VDS= -15V
- The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.