XP162A12A6PR TOREX | Alldatasheet
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91""13 1PXFS.04'&5 u ˗ P-Channel Power MOS FET ˙ Applications ˗ DMOS Structure ˔Notebook PCs ˗ Low On-State Resistance : 0.17 Ω (max) ˔Cellular and portable phones ˗ Ultra High-Speed Switching ˔On - board power supplies ˗ Gate Protect Diode Built-in ˔Li - ion battery systems ˗ SOT - 89 Package ˙ General Description ˙ Features The XP162A12A6PR is a P-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.17Ω ( Vgs = -4.5V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.3Ω ( Vgs = -2.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Operational Voltage : -2.5V In order to counter static, a gate protect diode is built-in. Gate protect diode built-in The small SOT-89 package makes high density mounting possible. High density mounting : SOT - 89 ˙ Pin Configuration ˙ Pin Assignment PIN NUMBERPIN NAME G Gate D Drain S Source ˙ Equivalent Circuit ˙ Absolute Maximum Ratings Ta=25O C SYMBOL RATINGS UNITS Vdss -20 V Vgss + 12 V Id -2.5 A Idp -10 A Idr -2.5 A Pd 2 W Tch 150 O C Tstg -55 to 150 O C P - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a ceramic PCB FUNCTION PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature SOT - 89 Top View GD S 123
u ˙ Electrical Characteristics DC characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = - 20 , Vgs = 0V - 10 µ A Gate-Source Leakage Current Igss Vgs = ± 12 , Vds = 0V ± 10 µ A Gate-Source Cut-off Voltage Vgs (off ) Id = -1mA , Vds = - 10V - 0.5 - 1.2 V Drain-Source On-state Resistance Id = - 1.5A , Vgs = - 4.5V 0.13 0.17 Ω ( note ) Id = - 1.5A , Vgs = - 2.5V 0.22 0.3 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 310 pF Output Capacitance Coss Vds = - 10V , Vgs = 0V 200 pF Feedback Capacitance Crss f = 1 MHz 90 pF Switching characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) 5 ns Rise Time tr Vgs = - 5V , Id = - 1.5A 15 ns Turn-off Delay Time td ( off ) Vdd = - 10V 55 ns Fall Time tf 55 ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a ceramic ( channel - surroundings ) PCB °C / W62.5Rth ( ch - a ) Vf If = - 2.5A , Vgs = 0V V - 0.85 - 1.1 Id = - 1.5A , Vds = - 10V| Yfs | Rds ( on )
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