XP162A11C0PR TOREX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
91"$13 1PXFS.04'&5 u ˗ P-Channel Power MOS FET ˙ Applications ˗ DMOS Structure ˔Notebook PCs ˗ Low On-State Resistance : 0.28 Ω (max) ˔Cellular and portable phones ˗ Ultra High-Speed Switching ˔On - board power supplies ˗ Gate Protect Diode Built-in ˔Li - ion battery systems ˗ SOT - 89 Package ˙ General Description ˙ Features The XP162A11COPR is a P-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.15Ω ( Vgs = -10V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.28Ω ( Vgs = -4.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Operational Voltage : -4.5V In order to counter static, a gate protect diode is built-in. Gate protect diode built-in The small SOT-89 package makes high density mounting possible. High density mounting : SOT - 89 ˙ Pin Configuration ˙ Pin Assignment PIN NUMBERPIN NAME G Gate D Drain S Source ˙ Equivalent Circuit ˙ Absolute Maximum Ratings Ta=25O C SYMBOL RATINGS UNITS Vdss -30 V Vgss + 20 V Id -2.5 A Idp -10 A Idr -2.5 A Pd 2 W Tch 150 O C Tstg -55 to 150 O C P - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a ceramic PCB FUNCTION PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature SOT - 89 Top View GD S 1 2 3
u ˙ Electrical Characteristics DC characteristics Ta=25 °C PARAMETER SYMBOL CONDITIONS MIN TYP M A X UNITS Drain Cut-off Current Idss Vds = - 30 , Vgs = 0V - 10 µ A Gate-Source Leakage Current Igss Vgs = ± 20 , Vds = 0V ± 10 µ A Gate-Source Cut-off Voltage Vgs (off ) Id = -1mA , Vds = - 10V - 1.0 - 2.5 V Drain-Source On-state Resistance Id = - 1.5A , Vgs = - 10V 0.11 0.15 Ω ( note ) Id = - 1.5A , Vgs = - 4.5V 0.2 0.28 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25 °C PARAMETER SYMBOL CONDITIONS MIN TYP M A X UNITS Input Capacitance Ciss 280 pF Output Capacitance Coss Vds = - 10V , Vgs = 0V 200 pF Feedback Capacitance Crss f = 1 MHz 90 pF Switching characteristics Ta=25 °C PARAMETER SYMBOL CONDITIONS MIN TYP M A X UNITS Turn-on Delay Time td ( on ) 10 ns Rise Time tr Vgs = - 5V , Id = - 1.5A 30 ns Turn-off Delay Time td ( off ) Vdd = - 10V 20 ns Fall Time tf 35 ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP M A X UNITS Thermal Resistance Implement on a ceramic ( channel - surroundings ) PCB Id = - 1.5A , Vds = - 10V| Yfs | Rds ( on ) S2.5 °C / W62.5Rth ( ch - a ) Vf If = - 2.5A , Vgs = 0V V - 0.85 - 1.1
91"$13 1PXFS.04'&5 u ˆ ˆ ˆ 1VMTF5FTU 7HT ˙ Electrical Characteristics %SBJO4PVSDF7PMUBHF7ET 7 (BUF4PVSDF7PMUBHF7HT 7 %SBJO$VSSFOU*E " %SBJO$VSSFOU*E " Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage 7ET 1VMTF5FTU5B ˆ 1VMTF5FTU 7HT ˆ Drain/Source On-State Resistance vs. Gate/Source Voltage ˆ 1VMTF5FTU Drain/Source On-State Resistance vs. Drain Current %SBJO4PVSDF0O4UBUF3FTJTUBODF 3ET PO Њ (BUF4PVSDF7PMUBHF7HT 7 %SBJO$VSSFOU*E " %SBJO4PVSDF0O4UBUF3FTJTUBODF 3ET PO Њ 1VMTF5FTU 7ET Drain/Source On-State Resistance vs. Ambient Temp Gate/Source Cut Off Voltage Variance vs. Ambient Temp. (BUF4PVSDF$VU0GG7PMUBHF7BSJBODF 7HT PGG 7BSJBODF 7 "NCJFOU5FNQ5PQS ˆ "NCJFOU5FNQ5PQS ˆ %SBJO4PVSDF0O4UBUF3FTJTUBODF 3ET PO Њ "7HT
u 7HT G .)[ ˆ $BQBDJUBODF$ Q' $PTT $JTT $STT US UE PO UE PGG UG ˙ Electrical Characteristics Switching Time vs. Drain CurrentDrain/Source Voltage vs. Capacitance 7HT 7EE˺7 ЖT EVUZʽ ˆ %SBJO4PVSDF7PMUBHF7ET 7 %SBJO$VSSFOU*E " 4XJUDIJOH5JNFU OT 7HT 7ET ˆ 5B ˆ 1VMTF5FTU Reverse Drain Current vs. Source/Drain Voltage 3FWFSTF%SBJO$VSSFOU*ES " Gate/Source Voltage vs. Gate Charge (BUF4PVSDF7PMUBHF7HT 7 (BUF$IBSHF2H OD 4PVSDF%SBJO7PMUBHF7TE 7 Standardized Transition Thermal Resistance vs. Pulse Width 1VMTF8JEUI18 T 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U 4JOHMF1VMTF 3UI DIB *NQMFNFOUFEPOBDFSBNJD1$#