XP161A13555PR TOREX | Alldatasheet
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Technical content
1526 XP161A1355PR ETR1124_001.doc PIN NUMBER PIN NAME FUNCTION
1 G Gate
2 D Drain
3 S Source
PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss ±8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55~150 ℃ ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.05Ω(MAX.) ◆Ultra High-Speed Switching ◆SOT-89 Package ◆Gate Protect Diode Built-in ■GENERAL DESCRIPTION The XP161A1355PR is an N-channel Power MOSFET with lo w on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems ■FEATURES Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V : Rds (on)= 0.07Ω@ Vgs = 2.5V : Rds (on)= 0.15Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V High Density Mounting : SOT-89 ■PIN CONFIGURATION ■PIN ASSIGNMENT ■ABSOLUTE MAXIMUM RATINGS ■EQUIVALENT CIRCUIT Ta = 25℃ * When implemented on a ceramic PCB
PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Drain Cut-Off Current Idss Vds=20V, Vgs= 0V - - 10 μA Gate-Source Leak Current Igss Vgs= ±8V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 0.5 - 1.2 V Id= 2A, Vgs= 4.5V - 0.037 0.050 Ω Id= 2A, Vgs= 2.5V - 0.05 0.07 Ω Drain-Source On-State Resistance *1 Rds(on) Id= 0.5A, Vgs= 1.5V - 0.1 0.15 Ω Forward Transfer Admittance *1 | Yfs | Id= 2A, Vds= 10V - 10 - S Body Drain Diode Forward Voltage Vf If= 4A, Vgs= 0V - 0.85 1.1 V PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Input Capacitance Ciss - 390 - pF Output Capacitance Coss - 210 - pF Feedback Capacitance Crss Vds= 10V, Vgs=0V f= 1MHz - 90 - pF PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Turn-Off Delay Time td (off) - 85 - ns Fall Time tf Vgs= 5V, Id=2A Vdd= 10V - 45 - ns PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 62.5 - ℃/W ■ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25℃ *1 Effective during pulse test. Ta = 25℃ Ta = 25℃Switching Characteristics Thermal Characteristics Dynamic Characteristics
■TYPICAL PERFORMANCE CHARACTERISTICS
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width