XP161A01A8PR

XP161A01A8PR TOREX | Alldatasheet

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■General Description ■Features ■Applications ■Pin Configuration ■Pin Assignment The XP161A01A8PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. Low on-state resistance: Rds(on)=0.11Ω(Vgs=10V) : Rds(on)=0.18Ω(Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOT-89 GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.18Ω(max) NUltra High-Speed Switching SOT-89（TOP VIEW）3 ＧＳＤN-Channel MOS FET (1 device built-in) PIN NUMBER PIN NAME FUNCTION G S D Gate Source Drain PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg ±20 150 -55~150 V V A A A W SYMBOL RATINGS UNITS Ta=25˚C When implemented on a ceramic PCB Note: ■Equivalent Circuit ■Absolute Maximum Ratings 11S_41XP161A01A8PR 02.9.12 4:15 PM ページ 850

■Electrical Characteristics DC Characteristics Ta=25: PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 1.0 V 0.18 0.14 Id=1.5A, Vgs=4.5V Ω Gate-Source Leakage Current Igss µA ±10 Forward Transfer Admittance (note) 3.5 S Body Drain Diode Forward Voltage 0.85 1.1 V Drain Cut-off Current Idss µA Vf Vds=30V, Vgs=0V Id=1mA, Vds=10V Id=1.5A, Vds=10V If=3A, Vgs=0V Vgs=±20V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) Ω Id=1.5A, Vgs=10V 0.08 0.11 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 140 220 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic Characteristics Ta=25: Effective during pulse test. Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns ns Vgs=5V, Id=1.5A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching Characteristics Ta=25: PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-ambience) 62.5 ˚C/W Implement on a ceramic PCB SYMBOL CONDITIONS MAX MIN TYP Thermal Characteristics 11S_41XP161A01A8PR 02.9.12 4:15 PM ページ 851

■Typical Performance Characteristics 0.4 0.3 0.2 0.1 -60 -30 120 150 Drain-Source On-State Resistance :Rds (on) (Ω) Ambient Temp.:Topr (:) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test Id＝3A 1.5A 1.5A,3A 10V Vgs＝4.5V 0.5 -0.5 -60 -30 120 150 Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (:) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds＝10V , Id＝1mA 9.0 6.0 3.0 0.0 Drain Current:Id (A) Drain-Source Voltage:Vds (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: 10V 4.5V 3.5V Vgs＝2.5V Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V 0.2 0.3 0.1 Drain-Source On-State Resistance :Rds (on) (Ω) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: Id＝1.5A 0.1 0.01 Drain-Source On-State Resistance :Rds (on) (Ω) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: 10V Vgs＝4.5V 11S_41XP161A01A8PR 02.9.12 4:15 PM ページ 852

Capacitance:C (pF) Drain-Source Voltage:Vds (V) CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz Ciss Coss Crss 1000 1000 100 0.1 Switching Time:t (ns) Drain Current:Id (A) SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd≒10V, PW=10µsec. duty≤1% tf td（off）td（on）, tr Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=3A 0.6 0.8 0.2 0.4 Reverse Drain Current:Id (A) Source-Drain Voltage:Vsd (V) REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test 0,-4.5A Vgs＝4.5V 0.1 0.01 0.001 0.0001 0.0001 100 0.1 0.01 0.001 Pulse Width:PW (sec) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB) Single Pulse Standardized Transition Thermal Resistance:γs(t) 11S_41XP161A01A8PR 02.9.12 4:15 PM ページ 853