XP152A12C0MR_12 TOREX | Alldatasheet
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PRODUCTS PACKAGE ORDER UNIT XP152A12C0MR SOT-23 3, 000/Reel XP152A12C0MR-G(*) SOT-23 3,000/Reel PARAMETER SYMBOL RATINGSUNITS Drain - Source Voltage Vdss -20 V Gate - Source Voltage Vgss ±12 V Drain Current (DC) Id -0.7 A Drain Current (Pulse) Idp -2.8 A Reverse Drain Current Idr -0.7 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING ■PIN ASSIGNMENT ■ABSOLUTE MAXIMUM RATINGS ■EQUIVALENT CIRCUIT Ta = 25℃ * When implemented on a ceramic PCB ETR1121_003 G：Gate S：Source D：Drain 2 1 2 x * x represents production lot number. (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 μA Gate-Source Leak Current Igss Vgs= ±12V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id = -1mA, Vds= -10V -0.5 - -1.2 V Drain-Source On-State Resistance *1 Rds(on) Forward Transfer Admittance *1 | Yfs | Id= -0.4A, Vds= -10V - 1.5 - S Body Drain Diode Forward Voltage Vf If= -0.7A, Vgs= 0V - -0.8 -1.1 V PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 250 - ℃/W PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Input Capacitance Ciss - 180 - pF Output Capacitance Coss - 120 - pF Feedback Capacitance Crss Vds= -10V, Vgs=0V f= 1MHz - 60 - pF PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Turn-On Delay Time td (on) - 5 - ns Rise Time tr - 20 - ns Turn-Off Delay Time td (off) - 55 - ns Fall Time tf Vgs= -5V, Id= -0.4A Vdd= -10V - 70 - ns ■ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25℃ *1 Effective during pulse test. Ta = 25℃Switching Characteristics Thermal Characteristics Dynamic Characteristics Ta = 25℃
■TYPICAL PERFOMANCE CHARACTERISTICS
■TYPICAL PERFOMANCE CHARACTERISTICS (Continued)
- The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.