XP152A11E5MR TOREX | Alldatasheet
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91"&.3 1PXFS.04'&5 u ˗ P-Channel Power MOS FET ˙ Applications ˗ DMOS Structure ˔Notebook PCs ˗ Low On-State Resistance : 0.45Ω (max) ˔Cellular and portable phones ˗ Ultra High-Speed Switching ˔On - board power supplies ˗ Gate Protect Diode Built-in ˔Li - ion battery systems ˗ SOT - 23 Package ˙ General Description ˙ Features The XP152A11E5MR is a P-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.25Ω ( Vgs = -10V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.45Ω ( Vgs = -4.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Gate Protect Diode Built-in In order to counter static, a gate protect diode is built-in. Operational Voltage : -4.5V The small SOT-23 package makes high density mounting possible. High density mounting : SOT - 23 ˙ Pin Configuration ˙ Pin Assignment PIN NUMBER PIN NAME G Gate S Source D Drain ˙ Equivalent Circuit ˙ Absolute Maximum Ratings Ta=25O C SYMBOL RATINGS UNITS Vdss -30 V Vgss + 20 V Id -0.7 A Idp -2.8 A Idr -0.7 A Pd 0.5 W Tch 150 O C Tstg -55 to 150 O C P - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a ceramic PCB Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) FUNCTION PARAMETER SOT - 23 Top View 1 2 G D S 1 2
u ˙ Electrical Characteristics DC characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = - 30 , Vgs = 0V - 10 µ A Gate-Source Leakage Current Igss Vgs = ± 20 , Vds = 0V ± 10 µ A Gate-Source Cut-off Voltage Vgs (off ) Id = -1mA , Vds = - 10V - 1.0 - 3.0 V Drain-Source On-state Resistance Id = - 0.4A , Vgs = - 10V 0.2 0.25 Ω ( note ) Id = - 0.4A , Vgs = - 4.5V 0.35 0.45 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 160 pF Output Capacitance Coss Vds = - 10V , Vgs = 0V 120 pF Feedback Capacitance Crss f = 1 MHz 50 pF Switching characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) 10 ns Rise Time tr Vgs = - 5V , Id = - 0.4A 25 ns Turn-off Delay Time td ( off ) Vdd = - 10V 25 ns Fall Time tf 40 ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a ceramic ( channel - surroundings ) PCB °C / W250Rth ( ch - a ) Vf If = - 0.7A , Vgs = 0V V -0.8 - 1.1 Id = - 0.4A , Vds = - 10V| Yfs | Rds ( on )
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