XP152A01D8MR TOREX | Alldatasheet
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91"%.3 1PXFS.04'&5 u N P-Channel Power MOS FET N DMOS Structure N Low On-State Resistance: 0.48Ω MAX N Ultra High-Speed Switching I Applications G Notebook PCs G Cellular and portable phones G On-board power supplies G Li-ion battery systems I General Description The XP152A01D8MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. I Features Low on-state resistance: Rds(on)=0.48Ω (Vgs=-4.5V) Rds(on)=0.80Ω (Vgs=-2.5V) Ultra high-speed switching Operational Voltage: -2.5V High density mounting: SOT-23 I Absolute Maximum RatingsI Equivalent Circuit I Pin Configuration PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg -20 ±12 -0.5 -1.5 -0.5 0.5 150 -55~150 V V A A A W SYMBOL RATINGS UNITS I Pin Assignment PIN NUMBER PIN NAME FUNCTION G D S Gate Drain Source Ta=25 : When implemented on a glass epoxy PCBNote: 1 2 P-Channel MOS FET (1 device built-in) D G S SOT-23 (TOP VIEW)
u DC characteristics Ta=25 : I Electrical Characteristics PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) -0.5 V 0.80.6Id=-0.3A, Vgs=-2.5V Ω Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 1S Body Drain Diode Forward Voltage -0.8 -1.1 V Drain Cut-off Current Idss -10 µA Vf Vds=-20V, Vgs=0V Id=-1mA, Vds=-10V Id=-0.3A, Vds=-10V If=-0.5A, Vgs=0V Vgs=±12V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=-0.3A, Vgs=-4.5V 0.36 0.48 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 100 180pF Vds=-10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic characteristics Ta=25 : Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns30 10ns Vgs=-5V, Id=-0.3A Vdd=-10V SYMBOL CONDITIONS MAX MIN TYP Switching characteristics Ta=25 : PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-surroundings) 250 :/WImplement on a glass epoxy resin PCB SYMBOL CONDITIONS MAX MIN TYP Thermal characteristics
91"%.3 1PXFS.04'&5 u Drain/Source On-State Resistance :Rds (on) (Ω ) Ambient Temperature:Topr (:) Drain/Source On-State Resistance vs. Ambient Temp. Pulse Test, Ta=25: *Eʹ" 7HTʹ7 Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Ambient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance vs. Ambient Temp. 7ETʹ7 *EʹN" ˙ XP152A01D8MR Characteristics Drain Current:Id (A) Drain/Source Voltage:Vds (V) Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: 7HTʹ7 Drain Current:Id (A) Gate/Source Voltage:Vgs (V) Drain Current vs. Gate/Source Voltage Pulse Test, Vds=-10V 5PQSʹˆ ˆ Drain /Source On-State Resistance :Rds (on) (Ω ) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: *Eʹ" " Drain/Source On-State Resistance :Rds (on) (Ω ) Drain Current:Id (A) Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: 7HT
u ˙ XP152A01D8MR Characteristics -0.5 -1.5 02468 -10 Gate/Source Voltage:Vgs (V) Gate Charge:Qg (nc) Gate/Source Voltage vs. Gate Charge Vds=-10V, Id=-0.5A Pulse Test, Ta=25: Reverse Drain Current:Id (A) Source/Drain Voltage:Vsd (V) Reverse Drain Current vs. Source/Drain Voltage 0, 4.5V -2.5V Vgs=-4.5V Standardized Transition Thermal Resistance vs. Pulse Width 0.0001 0.001 0.01 0.1 1 100 10 0.1 0.01 0.001 0.0001 Pulse Width:PW (sec) Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB) 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U Single Pulse Switching Time:t (ns) Drain Current:Id (A) Switching Time vs. Drain Current Vgs=-5V, Vdd˺-10V, PW=10µsec. dutyʽ1% UG US UEʢPGGʣ UEʢPOʣ Capacitance:Ciss, Coss, Crss (pF) Drain/Source Voltage:Vds (V) Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz $JTT $PTT $STT