XP151A13A0MR

XP151A13A0MR TOREX | Alldatasheet

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91"".3 1PXFS.04'&5 u ˗ N-Channel Power MOS FET ˙ Applications ˗ DMOS Structure ˔Notebook PCs ˗ Low On-State Resistance : 0.1Ω (max) ˔Cellular and portable phones ˗ Ultra High-Speed Switching ˔On - board power supplies ˗ Gate Protect Diode Built-in ˔Li - ion battery systems ˗ SOT - 23 Package ˙ General Description ˙ Features The XP151A13A0MR is a N-Channel Power MOS FET with low on Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) state resistance and ultra high-speed switching characteristics. Rds (on) = 0.14Ω ( Vgs = 2.5V ) Because high-speed switching is possible, the IC can be efficiently Rds (on) = 0.25Ω ( Vgs = 1.5V ) set thereby saving energy. Ultra high-speed switching In order to counter static, a gate protect diode is built-in.Gate Protect Diode Built-in The small SOT-23 package makes high density mounting possible.Operational Voltage : 1.5V High density mounting : SOT - 23 ˙ Pin Configuration ˙ Pin Assignment PIN NUMBER PIN NAME G Gate S Source D Drain ˙ Equivalent Circuit ˙ Absolute Maximum Ratings Ta=25O C SYMBOL RATINGS UNITS Vdss 20V Vgss + 8 V Id 1 A Idp 4 A Idr 1 A Tch 150 O C Tstg -55 to 150 O C N - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a ceramic PCB FUNCTION PARAMETER Reverse Drain Current Continuous Channel Power Dissipation (note) Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Pd 0.5 W Storage Temperature Channel Temperature SOT - 23 Top View 1 2 G D S 1 2

u ˙ Electrical Characteristics DC characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = 20 , Vgs = 0V 10 µ A Gate-Source Leakage Current Igss Vgs = ± 8 , Vds = 0V ± 10 µ A Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 0.5 1.2 V Id = 0.5A , Vgs = 4.5V 0.075 0.1 Ω Drain-Source On-state Resistance Rds ( on ) Id = 0.5A , Vgs = 2.5V 0.1 0.14 Ω (note) Id = 0.1A , Vgs = 1.5V 0.17 0.25 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 220pF Output Capacitance Coss Vds = 10V , Vgs = 0V 120 pF Feedback Capacitance Crss f = 1 MHz 45 pF Switching characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) 10ns Rise Time tr Vgs = 5V , Id = 0.5A 15 ns Turn-off Delay Time td ( off ) Vdd = 10V 75 ns Fall Time tf 65 ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a ceramic ( channel - surroundings ) PCB °C / W250Rth ( ch - a ) Vf If = 1A , Vgs = 0V V 0.8 1.1 Id = 0.5A , Vds = 10V| Yfs | S4.2

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