XP151A02B0MR

XP151A02B0MR TOREX | Alldatasheet

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91"#.3 1PXFS.04'&5 u 1 2 D G S N N-Channel Power MOS FET N DMOS Structure N Low On-State Resistance: 0.2Ω MAX N Ultra High-Speed Switching I Applications G Notebook PCs G Cellular and portable phones G On-board power supplies G Li-ion battery systems I General Description The XP151A02B0MR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. I Features Low on-state resistance: Rds(on)=0.2Ω (Vgs=4.5V) Rds(on)=0.32Ω (Vgs=2.5V) Ultra high-speed switching Operational Voltage: 2.5V High density mounting: SOT-23 I Absolute Maximum RatingsI Equivalent Circuit I Pin Configuration N-Channel MOS FET (1 device built-in) PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg ±12 0.8 2.5 0.8 0.5 150 -55~150 V V A A A W SYMBOL RATINGS UNITS I Pin Assignment PIN NUMBER PIN NAME FUNCTION G D S Gate Drain Source SOT-23 (TOP VIEW) Ta=25 : When implemented on a glass epoxy PCBNote:

u DC characteristics Ta=25 : I Electrical Characteristics PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 0.7 V 0.320.24Id=0.4A, Vgs=2.5V Ω Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 2.5 S Body Drain Diode Forward Voltage 0.8 1.1 V Drain Cut-off Current Idss 10 µA Vf Vds=20V, Vgs=0V Id=1mA, Vds=10V Id=0.4A, Vds=10V If=0.8A, Vgs=0V Vgs=±12V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=0.4A, Vgs=4.5V 0.15 0.2 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 100 180 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic characteristics Ta=25 : Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns30 10 ns Vgs=5V, Id=0.4A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching characteristics Ta=25 : PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-surroundings) 250 :/WImplement on a glass epoxy resin PCB SYMBOL CONDITIONS MAX MIN TYP Thermal characteristics

91"#.3 1PXFS.04'&5 u *Eʹ" 7HTʹ7 Drain/Source On-State Resistance :Rds (on) (Ω ) Pulse Test Drain/Source On-State Resistance vs. Ambient Temp. Ambient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) ɹɹɹɹAmbient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=10V, Id=1mA ˙ XP151A02B0MR Characteristics Drain Current:Id (A) ɹɹɹDrain/Source Voltage:Vds (V) ɹɹɹɹɹDrain Current vs. Drain /Source Voltage Pulse Test, Ta=25: 7HTʹ7 ˆ 5PQSʹˆ ɹɹɹɹDrain Current:Id (A) ɹɹɹɹGate/Source Voltage:Vgs (V) Drain Current vs. Gate/Source Voltage Pulse Test, Vds=10V ˆ *Eʹ" " Drain /Source On-State Resistance :Rds (on) (Ω ) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: 7HTʹ7 Drain/Source On-State Resistance :Rds (on) (Ω ) Drain Current:Id (A) Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25:

u ˙ XP151A02B0MR Characteristics Capacitance:Ciss, Coss, Crss (pF)ɹ ɹɹɹDrain/Source Voltage:Vds (V) Drain/Source Voltage vs. Capacitanceɹ 7HTʹ7 Gʹ.)[ $JTT $PTT $STT ɹɹɹɹSwitching Time:t (ns) ɹɹɹɹɹɹDrain Current:Id (A) Switching Time vs. Drain Currentɹɹɹ Vgs=5V, Vdd˺10V, PW=10µsec. dutyʽ1% UG US UEʢPGGʣ UEʢPOʣ Gate/Source Voltage:Vgs (V)ɹɹ ɹɹɹɹGate Charge:Qg (nc) Gate/Source Voltage vs. Gate Chargeɹɹ Vds=10V, Id=0.8A 7HTʹ7 Reverse Drain Current:Idr (A)ɹɹɹ Source/Drain Voltage:Vsd (V)ɹɹɹɹ Reverse Drain Current vs. Source/Drain Voltage Pulse Test Single Pulse Pulse Width:PW (sec) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB) 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U