XP151A01C3MR

XP151A01C3MR TOREX | Alldatasheet

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91"$.3 1PXFS.04'&5 u 1 2 D G S N N-Channel Power MOS FET N DMOS Structure N Low On-State Resistance: 0.33Ω MAX N Ultra High-Speed Switching I Applications G Notebook PCs G Cellular and portable phones G On-board power supplies G Li-ion battery systems I General Description The XP151A01C3MR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. I Features Low on-state resistance: Rds(on)=0.2Ω (Vgs=10V) Rds(on)=0.33Ω (Vgs=4.5V) Ultra high-speed switching Operational Voltage: 4.5V High density mounting: SOT-23 I Absolute Maximum RatingsI Equivalent Circuit I Pin Configuration N-Channel MOS FET (1 device built-in) PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg ±20 0.8 2.5 0.8 0.5 150 -55~150 V V A A A W SYMBOL RATINGS UNITS I Pin Assignment PIN NUMBER PIN NAME FUNCTION G D S Gate Drain Source SOT-23 (TOP VIEW) Ta=25 : When implemented on a glass epoxy PCBNote:

u DC characteristics Ta=25 : I Electrical Characteristics PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 1.0 V 0.330.25Id=0.4A, Vgs=4.5V Ω Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 1.5 S Body Drain Diode Forward Voltage 0.8 1.1 V Drain Cut-off Current Idss 10 µA Vf Vds=30V, Vgs=0V Id=1mA, Vds=10V Id=0.4A, Vds=10V If=0.8A, Vgs=0V Vgs=±20V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=0.4A, Vgs=10V 0.15 0.2 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 130 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic characteristics Ta=25 : Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns20 10 ns Vgs=5V, Id=0.4A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching characteristics Ta=25 : PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-surroundings) 250 ˚C/WImplement on a glass epoxy resin PCB SYMBOL CONDITIONS MAX MIN TYP Thermal characteristics

91"$.3 1PXFS.04'&5 u *Eʹ" 7HTʹ7 Drain/Source On-State Resistance vs. Ambient Temp.Drain/Source On-State Resistance :Rds (on) (Ω ) Ambient Temperature:Topr (:) Pulse Test Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=10V, Id=1mA Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Ambient Temperature:Topr (:) ˙ XP151A01C3MR Characteristics 7HTʹ7ɹɹɹ Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: Drain Current:Id (A) Drain/Source Voltage:Vds (V) 5PQSʹˆ ˆ ˆ Drain Current vs. Gate/Source Voltage Pulse Test, Vds=10V Drain Current:Id (A) Gate/Source Voltage:Vgs (V) "*Eʹ" Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: Drain /Source On-State Resistance :Rds (on) (Ω ) Gate/Source Voltage:Vgs (V) 7HTʹ7 Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: Drain/Source On-State Resistance :Rds (on) (Ω ) Drain Current:Id (A)

u ˙ XP151A01C3MR Characteristics $JTT $PTT $STT Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz Capacitance:Ciss, Coss, Crss (pF) Drain/Source Voltage:Vds (V) UG US UEʢPGGʣ UEʢPOʣ Switching Time vs. Drain Current Vgs=5V, Vdd˺10V, PW=10µsec. dutyʽ1% Switching Time:t (ns) Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge Vds=10V, Id=0.8A Gate/Source Voltage:Vgs (V) Gate Charge:Qg (nc) 7HTʹ7 Reverse Drain Current vs. Source/Drain Voltage Pulse Test Reverse Drain Current:Id (A) Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB) 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U Pulse Width:PW (sec) Single Pulse