XP132A11A1SR VBSEMI | Alldatasheet

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P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition  Tre nchFET® Power MOSFET  Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) - 30 0.042 at VGS = - 10 V - 5.8 0.055 at VGS = - 6 V - 5.0 0.060 at VGS = - 4.5 V - 4.4 SD SD S D G D SO-8 Top View S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise no ted Parameter Symbol 10 s Steady State U n it Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID - 5.8 - 4.1 A Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.1 Maximum Power Dissi pationa TA = 25 °C PD 2.5 1.3 WTA = 70 °C 1.6 0.8 Operating Junction and Storage Temper ature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Ma x imum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 40 50 °C/WSteady State 70 95 Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Te st Conditions Min. Typ. a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.7 - 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 70 °C - 5 On-State Drain Currentb ID(on) VDS ≤ - 10 V, VGS = - 10 V - 20 AVDS ≤ - 5 V, VGS = - 4.5 V - 5 Drain-Source On-State Resistanceb RDS(on) VGS = - 10 V, ID = - 5.8 A 0.033 0.042 ΩVGS = - 6 V, ID = - 5 A 0.043 0.055 VGS = - 4.5 V, ID = - 4.4 A 0.056 0.060 Forward Transconductanceb gfs VDS = - 15 V, ID = - 5.8 A 13 S Diode Forward Voltageb VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.1 V Dynamica Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 16 24 nCGate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 Ω Tur n-On Delay T ime td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 14 25 ns Rise Time tr 14 25 Turn-Off Delay Time td(off) 42 70 Fall Time tf 30 50 Source-Drain Reverse Recovery Time trr IF = - 1.2 A, dI/dt = 100 A/µs 30 60 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise no ted Output Characteristics On-Resistance vs. Drain Current Gate Charg e 012345 VGS = 10 V thru 6 V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 3 V 5 V 4 V RDS(on) - On-Resistance (Ω) 0.00 0.03 0.06 0.09 0.12 0.15 04 8 1 2 1 6 2 0 ID - Drain Current (A) VGS = 6 V VGS = 4.5 V VGS = 10 V VDS = 15 V ID = 3.5 A VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temp erature 012345 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 220 440 660 880 1100 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss C - Capacitance (pF) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 5.7 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 C, unless otherwise note d Source-Drain Diode Forward Voltage Thresh old Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to -Ambient 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 1 0 ID = 5.8 A RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 150 Power (W) Time (s) 120 11 010-110-210-3 Safe Operating Area, Junction-to-Foot 100 0.1 1 10 100 0.01 100 ms

0.1 TC = 25 °C

Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise no ted Normalized Thermal Transient Impeda nce, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction -to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.18 9 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP132A11A1SR A ll data sheet.com

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