XP131A1715SR

XP131A1715SR TOREX | Alldatasheet

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■General Description ■Features ■Pin Configuration ■Equivalent Circuit ■Absolute Maximum Ratings ■Pin Assignment ■Applications １２３４５６７８S S S G D D D D SOP-8（TOP VIEW）PIN NUMBER PIN NAME FUNCTION 1 ～3 ＳSource ＧGate 5 ～8 ＤDrain １２３４５６７８N-Channel MOS FET( 1 device built-in ) Ta=25OC SYMBOL RATINGS UNITS Vdss V Vgss + 8 V Id A Idp A Idr A Pd 2.5 W Tch 150 OC Tstg -55 ~ 150 OC ( note ) : When implemented on a glass epoxy PCB PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.012 Ω(max) NUltra High-Speed Switching GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP131A1715SR is an N-Channel Power MOS FET with low on- state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.012Ω( Vgs = 4.5V ) : Rds (on) = 0.015Ω( Vgs = 2.5V ) : Rds (on) = 0.025Ω( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 11S_07XP131A1715SR 02.9.12 3:51 PM ページ 711

■Electrical Characteristics DC Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = 20V , Vgs = 0V µA Gate-Source Leakage Current Igss Vgs = ± 8V , Vds = 0V ± 1 µA Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 0.5 1.2 V Drain-Source On-state Resistance Id = 5A , Vgs = 4.5V 0.009 0.012 Ω (note) Rds ( on ) Id = 5A , Vgs = 2.5V 0.011 0.015 Ω Id = 5A , Vgs = 1.5V 0.017 0.025 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 2000 pF Output Capacitance Coss Vds = 10V , Vgs = 0V 1000 pF Feedback Capacitance Crss f = 1 MHz 450 pF Switching Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) ns Rise Time tr Vgs = 5V , Id = 5A ns Turn-off Delay Time td ( off ) Vdd = 10V ns Fall Time tf ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a glass epoxy ( channel-ambience ) resin PCB °C / W Rth ( ch-a ) Vf If = 10A , Vgs = 0V V 0.8 1.1 Id = 5A , Vds = 10V | Yfs | S 11S_07XP131A1715SR 02.9.12 3:51 PM ページ 712

■Typical Performance Characteristics 0.5 1.5 2.5 1.5V 2.5V 0.5 1.5 2.5 Topr=25℃-55℃125℃0 0.005 0.01 0.015 0.02 0.025 0.03 0.001 0.01 0.1 2.5V Vgs=1.5V 4.5V DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25℃Pulse Test DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Gate-Source Voltage:Vgs (V) Drain Current:Id (A) Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V) Drain Current:Id (A) Vgs=1V Drain Current:Id (A) Pulse Test, Ta=25℃DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Drain-Source On-State Resistance:Rds (on) (Ω) Id=10A Drain-Source On-State Resistance:Rds (on) (Ω) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25℃0 0.005 0.01 0.015 0.02 0.025 0.03 -50 -25 100 125 150 Vgs=1.5V 5A, 10A 1.5A 2.5V 4.5V 5A, 10A -0.6 -0.4 -0.2 0.2 0.4 0.6 -50 -25 100 125 150 Ambient Temp. :Topr (℃) Ambient Temp. :Topr (℃) Drain-Source On-State Resistance:Rds (on) (Ω) Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Pulse Test，Ta=25℃Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Id=5A XP131A1715SR 713 11S_07XP131A1715SR 02.9.12 3:51 PM ページ 713

td(off) td(on) tr tf Drain-Source Voltage:Vds (V) Drain Current:Id (A) Capacitance:C (pF) Switching Time:t (ns) Vgs=5V, Vdd≒10V, PW=10μs, duty≤1%, Ta=25℃Vgs=0V, f=1MHz, Ta=25℃CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT 0.2 0.4 0.6 0.8 Vgs=-4.5V, 0V 4.5V 1.5V 2.5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 Single Pulse STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Standardized Transition Thermal Resistance:γs(t) Gate-Source Voltage:Vgs (V) Reverse Drain Current:Idr (A) Source-Drain Voltage:Vsd (V) REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test, Ta=25℃GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=10A, Ta=25℃ Gate Charge:Qg (nc) Rth (ch-a) = 50℃/W ( Implemented on a glass epoxy PCB ) Pulse Width:PW (s) 11S_07XP131A1715SR 02.9.12 3:51 PM ページ 714