XP131A0150SR TOREX | Alldatasheet
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1PXFS.04'&5 715 ˙(FOFSBM%FTDSJQUJPO GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems ˙'FBUVSFT ˙"QQMJDBUJPOT The XP131A0150SR is an N-Channel Power MOS FET with low on- state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance: Rds(on)=0.035Ω (Vgs=10V) : Rds(on)=0.050Ω (Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOP-8 NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.05Ω (max) NUltra High-Speed Switching ˙1JO$POGJHVSBUJPO ˙&RVJWBMFOU$JSDVJU ˙"CTPMVUF.BYJNVN3BUJOHT ˙1JO"TTJHONFOU 401 5017*&8 ̨ % /$IBOOFM.04'&5 EFWJDFCVJMUJO ʙ ̨ 4PVSDF ̜ (BUF ʙ ̙ %SBJO PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg ±20 2.5 150 -55~150 V V A A A W SYMBOL RATINGS UNITS Ta=25°C When implemented on a glass epoxy PCBNote: 4@91"431. ϖʔδ
91"43 716 DC Characteristics Ta=25: PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 1.0 2.5 V 0.05 0.042 Id=4A, Vgs=4.5VΩ Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 10S Body Drain Diode Forward Voltage 0.85 1.1 V Drain Cut-off Current Idss 10 µA Vf Vds=30V, Vgs=0V Id=1mA, Vds=10V Id=4A, Vds=10V If=7A, Vgs=0V Vgs=±20V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=4A, Vgs=10V 0.028 0.035 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 180 450 720 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic Characteristics Ta=25: Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns35 25 ns Vgs=5V, Id=4A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching Characteristics Ta=25: PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-ambience) 50 ˚C/WImplement on a glass epoxy resin PCB SYMBOL CONDITIONS MAX MIN TYP Thermal Characteristics ˙&MFDUSJDBM$IBSBDUFSJTUJDT 4@91"431. ϖʔδ
91"43 717 ˙5ZQJDBM1FSGPSNBODF$IBSBDUFSJTUJDT Drain Current:Id (A) Drain-Source Voltage:Vds (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25°C 7HTʹ7 Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN CURRENT vs. GATE-SOURCE VOLTAGE 1VMTF5FTU 7ETʹ7 ˆ 5PQSʹˆ ˆ Drain-Source On-State Resistance :Rds (on) (Ω) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25°C 7HTʹ7 Drain-Source On-State Resistance :Rds (on) (Ω) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25°C *Eʹ" *Eʹ" 7HTʹ7 Pulse Test Drain-Source On-State Resistance :Rds (on) (Ω) Ambient Temp.:Topr (°C) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE 7ETʹ7 *EʹN" GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (°C) 4@91"431. ϖʔδ
91"43 718 $JTT $PTT $STT CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0VHz, f=1MHz Capacitance:C (pF) Drain-Source Voltage:Vds (V) UG US UEʢPGGʣ UEʢPOʣ SWITCHING TIME vs. DRAIN CURRENT Switching Time:t (ns) Drain Current:Id (A) Vgs=5V, Vdd˺10V, PW=10µsec. duty≤1% GATE-SOURCE VOLTAGE vs. GATE CHARGE Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) Vds=10V, Id=7A ɹɹ 7HTʹ7 REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Reverse Drain Current:Id (A) Source-Drain Voltage:Vsd (V) Pulse Test STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=50°C/W, (Implemented on a glass epoxy PCB) 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U Pulse Width:PW (sec) Single Pulse 4@91"431. ϖʔδ