XCM519BD02DR

XCM519 TOREX | Alldatasheet

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600mA Synchronous Step-Down DC/DC Converter + Low Voltage Input LDO ˙GENERAL DESCRIPTION The XCM519 series is a multi combination module IC which comprises of a 600mA driver transistor built-in synchronous step–down DC/DC converter and a low voltage input LDO regulator. The device is housed in small USP-12B01 package which is ideally suited for space conscious applications. Battery operated portable products require high efficiency so that a dual DC/DC converter is often used. The XCM5 19 can replace this dual DC/DC to elim inate one inductor and reduce output noise. The DC/DC converter and the LDO regulator blocks are isolated in the package so that noise interference from the DC/DC to the LDO regulator is minimal. A low output voltage and low On-resistance LDO regulator is added in series to the DC/DC output so that one another low output voltage is created with a high efficiency and low noise. With comparison to the dual DC/DC solution, one inductor can be eliminated which results in parts reduction and board space saving. ˙APPLICATIONS ˔Mobile phones, Smart phones ˔Bluetooth equipment ˔Portable communication modems ˔Portable game consoles (TOP VIEW) * The dashed lines denot e the connection using through-holes at the backside of the PC board. ETR2421-003 ˙çTYPICAL APPLICATION CIRCUIT ˙TYPICAL PERFORMANCE CHARACTERISTICS Dropout Voltage vs. Output Current VROUT=1.2V 100 150 200 250 300 0 100 200 300 400 Output Current: IOUT(mA) Dropout Voltage: Vdif(mV) VBIAS=3.0V VBIAS=3.3V VBIAS=3.6V VBIAS=4.2V VBIAS=5.0V Ta=25℃ ˙FEATURES <DC/DC Convertor Block> Input Voltage Range : 2.7V ~ 6.0V Output Voltage Range : 0.8V ~ 4.0V High Efficiency : 92% (TYP .) Output Current : 600mA (MAX.) Oscillation Frequency : 1.2MHz, 3.0MHz (+ 15%) Maximum Duty Cycle : 100% Soft-Start Circuit Built-In Current Limiter Circuit Built-In (Constant Current & Latching) Control Methods : PWM (XCM519A) PWM/PFM Auto (XCM519B) *Performance depends on external components and wiring on PCB wiring. <Regulator Block> Maximum Output Current : 400mA (Limiter 550mA TYP.) Dropout Voltage : 35mV@I OUT=100mA (TYP.) (at V BIAS - VROUT(E)=2.4V) Bias Voltage Range : 2.5V ~ 6.0V (VBIAS - VROUT(E)=0.9V) Input Voltage Range : 1.0V ~ 3.0V (V IN2ʽVBIAS) Output Voltage Range : 0.7V ~ 1.8V (0.05V increments) High Output Accuracy : ±20mV Supply Current : I BIAS=25ЖAçóçIIN2=1.0ЖA (TYP.) Stand-by Current : I BIAS=0.01ЖA , IIN2=0.01ЖA (TYP.) UVLO : V BIAS=2.0V , VIN2=0.4V (TYP) Thermal Shut Down : Detect 150ˆ, Release 125ˆ (TYP.) Soft-start Time : 240 ЖsˏVROUT=1.2V(TYP .) CL High Speed Auto-Discharge ç Low ESR Capacitor : Cera mic Capacitor Compatible Operating Temperature Range : -40ˆ ~ +85ˆ Package : USP-12B01 Standard Voltage Combinations : DC/DC VR X C M 5 1 9 x x 0 1 D x 1 . 8 V 1 . 2 V X C M 5 1 9 x x 0 2 D x 1 . 8 V 1 . 5 V X C M 5 1 9 x x 0 3 D x 1 . 5 V 1 . 2 V X C M 5 1 9 x x 0 4 D x 1 . 8 V 1 . 0 V X C M 5 1 9 x x 0 5 D x 1 . 5 V 1 . 0 V *Other combinations are available as semi-custom products.

ç çç ç çççççççççççççççççççççççç PIN No. XCM519 XC9235/XC9236 XC6601

1 DCOUT V OUT ―

2 AGND AGND ―

3 EN1 CE ―

4 V IN2 ― V IN

5 V SS2 ― V SS

6 VROUT ― V OUT

7 EN2 ― CE

8 NC ― ―

9 V BIAS ― V BIAS

10 V IN1 V IN ―

11 PGND PGND ―

12 Lx Lx ―

ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç PIN No XCM519 FUNCTIONS

1 DCOUT DC/DC Block: Output Voltage

2 AGND DC/DC Block: Analog Ground

3 EN1 DC/DC Block: Chip Enable

4 V IN2 Voltage Regulator Block: Power Input

5 V SS2 Voltage Regulator Block: Ground

6 VROUT Voltage Regulator Block: Output

7 EN2 Voltage Regulator Block: Enable

8 NC No Connection

9 V BIAS Voltage Regulator Block: Power Input

10 V IN1 DC/DC Block: Power Input

11 PGND DC/DC Block: Power Ground

12 Lx DC/DC Block: Switching

NOTE: * A dissipation pad on the reverse side of the package should be electrically isolated.ç *1: Electrical potential of the XC9235/XC9236’s dissipation pad should be VSS level. *2: Electrical potential of the XC6601’s dissipation pad should be VSS level. Care must be taken for an electrical potential of each diss ipation pad so as to enhance mounting strength and heat release when the pad needs to be connected to the circuit. ˙PIN ASSIGNMENT ˙PIN CONFIGURATIOIN (TOP VIEW) (BOTTOM VIEW)

ç ç ç ˔Ordering Information XCM519Aᶃᶄᶅᶆᶇ DC/DC BLOCK ɿPWM fixed control XCM519Bᶃᶄᶅᶆᶇ DC/DC BLOCK ɿPWM/PFM automatic switching control ˔DESIGNATORᶃ DC/DC BLOCK Voltage Regulator BLOCK ᶃç OSCILLATION FREQUENCYç CL AUTO DISCHARGE SOFT START Pull-down A 1.2M Not Available Standard Not Available B 3.0M Not Available Standard Not Available C 1.2M Available High Speed Not Available D 3.0M Available High Speed Not Available ç ç ç ç ˔DESIGNATORᶄᶅç ᶄᶅ DCOUT VROUT 01 1.8V 1.2V 02 1.8V 1.5V 03 1.5V 1.2V 04 1.8V 1.0V 05 1.5V 1.0V ç ç DESIGNATOR DESCRIPTION SYMBOL DESCRIPTION ᶃ Oscillation Frequency and Options ʵ See the chart below ᶄ ᶅ Output Voltage ʵ Internally set sequential number relating to output voltage (See the chart below) ᶆ Package D USP-12B01 ᶇ Device Orientation R Embossed tape, standard feed ˙PRODUCT CLASSIFICATION *This series are semi-custom products. For other combinations of output voltages please consult with your Torex sales contact. *When the DCOUT pin is connected to VIN2, DCOUT pin output voltage can be fixed in the range of 1.0Vʙ3.0V.

çççççççççççççççççççççççççççççççççççççççççççççççççççççççç Ta=25ˆ (*1) IVROUT=Less than Pd / (VIN2-VROUT)ç PARAMETER SYMBOL RATINGS UNITS VIN1Voltage V IN1 - 0.3 ʙ 6.5 V Lx Voltage V Lx - 0.3 ʙ V IN1 + 0.3 or 6.5 V DCOUT Voltage V DCOUT - 0.3 ʙ 6.5 V EN1 Voltage V EN1 - 0.3 ʙ 6.5 V Lx Current I Lx ±1500 mA VBIAS Voltage V BIAS V SS - 0.3 ʙ 7.0 V VIN2 Voltage VIN2 V SS - 0.3 ʙ 7.0 V VROUT Current IVROUT 700 (*1) mA VSS - 0.3ʙVBIAS + 0.3 VROUT Voltage V ROUT VSS - 0.3ʙVIN2 + 0.3 V EN2 Voltage V EN2 V SS - 0.3 ʙ 6.5 V Power Dissipation (Ta=25ˆ) USP-12B01 Pd 150 mW Junction Temperature Tj 125 ˆ Operating Temperature Range Topr -40 ʙ+85 ˆ Storage Temperature Range Tstg -55 ʙ+125 ˆ Error Amp. Vref with Soft Start, CE Phase Compensation PWM/PFM Selector Current Feedback Current Limit PWM Comparator Logic Synch Buffer Drive UVLO UVLO Cmp Ramp Wave Generator OSC Lx CE/MODE Control Logic CE/ VSHORT CE Error Amp. Vref with Soft Start, CE Phase Compensation PWM/PFM Selector Current Feedback Current Limit PWM Comparator Logic Synch Buffer Drive UVLO UVLO Cmp Ramp Wave Generator OSC Lx VSS VIN VOUT CE/MODE Control Logic VSHORT XC9235A/XC9236A XC9235B/XC9236B 、）(CL放電機能有 高速ソフトスタート VSS VIN VOUT ˙BLOCK DIAGRAMS ˙MAXIMUM ABSOLUTE RATINGS Available with CL Discharge, High Speed Soft-Start * XC9235 control scheme is a fixed PWM because that the “CE/MODE Control Logic” outputs a low level signal to the “PWM/PFM Selector”. * XC9236 control scheme is an auto PWM/PFM switching because the “CE/MODE Control Logic” outputs a high level signal to the “PWM/PFM Selector”. *Diodes inside the circuit are an ESD protection diode and a parasitic diode. XC6601B (Without Pull-down)

˙ELECTRICAL CHARACTERISTICS ˔XCM519xA (DC/DC BLOCK) V DCOUT=1.8V, fOSC=1.2MHz, Ta=25ˆ Test conditions: Unless otherwise stated, VIN = 5.0V, VDCOUT(E)= Setting voltage NOTE: *1: Including hysteresis width of operating voltage. *2: EFFI = { ( output voltageʷoutput current ) öç( input voltageʷinput current) }ʷ100 *3: ON resistance (Њ)= (VIN - Lx pin measurement voltage) öç100mA *4: Design value *5: When temperature is high, a current of approximately 10ЖA (maximum) may leak. *6: Time until it short-circuits DCOUT with GND via 1 Њof resistor from an operational state and is set to Lx=0V from current limit pulse generating. *7: VDCOUT (E)+1.2V<2.7V, VIN=2.7V. *8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes. If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance. *9: Current limit denotes the level of detection at peak of coil current. *10: "H"ʹVINʙVIN - 1.2V, "L" ʹ+ 0.1V ʙ - 0.1V *11: XCM519A series exclude IPFM and MAXIPFM because those are only for the PFM control’s functions. * The electrical characteristics above are when the other channel is in stop mode. PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Output Voltage V DCOUT When connected to external components, VIN1 = VEN1 =5.0V, IOUT1 =30mA 1.764 1.800 1.836 V ᶃ Operating Voltage Range V IN1 ç 2.7 - 6.0 V ᶃ Maximum Output Current I OUT1MAX When connected to external components, VIN1=DCOUT(E)+2.0V, VEN1=1.0V (*8) ç 600 - - mA ᶃ UVLO Voltage V UVLO VEN1=VIN1, DCOUT=0V, Voltage which Lx pin holding “L” level (*1, *10) ç 1.00 1.40 1.78 V ᶅ (XCM519AA) - 22 50 Supply Current I DD VIN1=VEN1=5.0V, DCOUT=DCOUT(E)×1.1V (XCM519BA) - 15 33 ᶄ ʵ Stand-by Current I STB V IN1=5.0V, VEN1=0V, DCOUT=DCOUT(E)×1.1V - 0 1.0 ЖA ᶄ Oscillation Frequency f OSC When connected to external components, VIN1=DCOUT(E)+2.0V,VEN1=1.0V, IOUT1=100mA (*11) 1020 1200 1380 kHz ᶃ PFM Switching Current ĐėčĔç When connected to external components, VIN1=VDCOUT(E)+2.0V, VEN1 =VIN1, IOUT1=1mA (*11) 120 160 200 mA ᶃ PFM Duty Limitç DLIMIT_PFM V EN1=VIN1=(C-1), IOUT1=1mA (*11) - 200 - % ᶃ Maximum Duty Ratio D MAX V IN1= VEN1 =5.0V, DCOUT=DCOUT(E)×0.9V 100 - - % ᶄ Minimum Duty Ratio D MIN V IN1= VEN1 =5.0V, DCOUT=DCOUT(E)×1.1V - - 0 % ᶄ Efficiency (*2) EFFI When connected to external components, VEN1=VIN1ʹDCOUT(E)+1.2V (*7) , IOUT1 =100mA - 92 - % ᶃ Lx SW "H" ON Resistance 1 R LXH V IN1= VEN1 =5.0V, DCOUT=0V,ILX=100mA (*3) - 0.35 0.55 Ω ᶆ Lx SW "H" ON Resistance 2 R LXH V IN1= VEN1 =3.6V, DCOUT=0V,ILX=100mA (*3) - 0.42 0.67 Ω ᶆ Lx SW "L" ON Resistance 1 R LXL V IN1= VEN1 =5.0V (*4) - 0.45 0.66 Ω ʵ Lx SW "L" ON Resistance 2 R LXL V IN1= VEN1=3.6V (*4) - 0.52 0.77 Ω ʵ Lx SW "H" Leak Current (*5) I LEAKH V IN1= DCOUT=5.0V, VEN1 =0V, VLX=0V - 0.01 1.0 ЖA ᶇ Lx SW "L" Leak Current (*5) I LEAKL V IN1= DCOUT=5.0V, VEN1 =0V, VLX=5.0V - 0.01 1.0 ЖA ᶇ Current Limit (*9) I LIM V IN1=VEN1=5.0V, DCOUT=DCOUT(E)×0.9V 900 1050 1350 mA ᶈ Output Voltage Temperature Characteristics ˚DCOUT / (DCOUTɾ˚topr) IOUT1 =30mA -40ˆʽToprʽ85ˆç - ±100 - ppm/ ˆ ᶃ EN1 "H" Level Voltage V EN1H DCOUT=0V, Applied voltage to VEN, Voltage changes Lx to “H” level (*10) 0.65 - 6.0 V ᶅ EN1 "L" Level Voltage V EN1L DCOUT=0V, Applied voltage to VEN, Voltage changes Lx to “L” level (*10) VSS - 0.25 V ᶅ EN1 "H" Current I EN1H V IN1=VEN1=5.0V, DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ EN1 "L" Current I EN1L V IN1=5.0V, VEN1 =0V, DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ Soft Start Time t SS When connected to external components, VEN1 =0V → VIN1, IOUT1=1mAç 0.5 1.0 2.5 ms ᶃ Latch Time t LAT VIN= VEN=5.0V, DCOUT=0.8× DCOUT(E) Short Lx at 1Ω resistance (*6) ç 1.0 - 20.0 ms ᶉ Short Protection Threshold Voltageç VSHORT Sweeping DCOUT , VIN1=VEN1= 5.0V, Short Lx at 1Ω resistance, DCOUT voltage which Lx becomes “L” level within 1msç 0.675 0.900 1.125 V ᶉ

˙ELECTRICAL CHARACTERISTICS (Continued) ˔XCM519xB 1ch (DC/DC BLOCK) V DCOUT=1.8V, fOSC=3.0MHz, Ta=25℃ Test conditions: Unless otherwise stated, VIN1=5.0V, VDCOUT(E)= Nominal voltage NOTE: *1: Including hysteresis width of operating voltage. *2: EFFI = { ( output voltageʷoutput current ) öç( input voltageʷinput current) }ʷ100 *3: ON resistance (Њ)= (VIN - Lx pin measurement voltage) öç100mA *4: Design value *5: When temperature is high, a current of approximately 10ЖA (maximum) may leak. *6: Time until it short-circuits DCOUT with GND via 1 Њof resistor from an operational state and is set to Lx=0V from current limit pulse generating. *7: VDCOUT (E)+1.2V<2.7V, VIN=2.7V. *8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes. If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance. *9: Current limit denotes the level of detection at peak of coil current. * 1 0 : " H "ʹVINʙVIN - 1.2V, "L" ʹ+ 0.1V ʙ - 0.1V *11: XCM519A series exclude IPFM and DLIMIT_PFM because those are only for the PFM control’s functions. * The electrical characteristics above are when the other channel is in stop mode. PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Output Voltage V DCOUT When connected to external components, VIN1 = VEN1 =5.0V, IOUT1 =30mA 1.764 1.800 1.836 V ᶃ Operating Voltage Range V IN1 ç 2.7 - 6.0 V ᶃ Maximum Output Current I OUT1MAX When connected to external components, VIN1=VDCOUT(E)+2.0V, VEN1=1.0V (*8) ç 600 - - mA ᶃ UVLO Voltage V UVLO VEN1=VIN1, DCOUT=0V, Voltage which Lx pin holding “L” level (*1, *10) ç 1.00 1.40 1.78 V ᶅ (XCM519AB) - 46 65 Supply Current IDD VIN1=VEN1=5.0V, DCOUT=ċĊĖĜěïČð×1.1V (XCM519BB) - 21 35 ᶄ ʵ Stand-by Current I STB V IN1=5.0V, VEN1=0V, DCOUT=ċĊĖĜěïČð×1.1V - 0 1.0 ЖA ᶄ Oscillation Frequency f OSC When connected to external components, VIN1=ċĊĖĜěïČð+2.0V,VEN1=1.0V, IOUT1=100mA 2550 3000 3450 kHz ᶃ PFM Switching Current I PFM When connected to external components, VIN1=ċĊĖĜěïČð+2.0V, VEN1 =VIN1, IOUT1=1mA (*11) 170 220 270 mA ᶃ PFM Duty Limit D LIMIT_PFM V EN1=VIN1=(C-1) IOUT1=1mA (*11) - 200 300 % ᶃ Maximum Duty Ratio D MAX V IN1=VEN1 =5.0V, DCOUT=ċĊĖĜěïČð×0.9V 100 - - % ᶄ Minimum Duty Ratio D MIN V IN1=VEN1 =5.0V, DCOUT=ċĊĖĜěïČð×1.1V - - 0 % ᶄ Efficiency EFFI When connected to external components, VEN1=VIN1ʹċĊĖĜěïČð+1.2V, IOUT1 =100mAç - 86 - % ᶃ Lx SW "H" ON Resistance 1 R LXH V IN1= VEN1 =5.0V, DCOUT=0V,ILX=100mA (*3) - 0.35 0.55 Ω ᶆ Lx SW "H" ON Resistance 2 R LXH V IN1= VEN1 =3.6V, DCOUT=0V,ILX=100mA (*3) - 0.42 0.67 Ω ᶆ Lx SW "L" ON Resistance 1 R LXL V IN1= VEN1 =5.0V (*4) - 0.45 0.66 Ω ʵ Lx SW "L" ON Resistance 2 R LXL V IN1= VEN1=3.6V (*4) - 0.52 0.77 Ω ʵ Lx SW "H" Leak Current (*5) I LEAKH V IN1= DCOUT=5.0V, VEN1 =0V, VLX=0V - 0.01 1.0 ЖAç ᶇ Lx SW "L" Leak Current (*5) I LEAKL V IN1= DCOUT=5.0V, VEN1 =0V, VLX=5.0V - 0.01 1.0 ЖAç ᶇ Current Limit (*9) ĐēĐĔç VIN1=VEN1=5.0V, DCOUT=ċĊĖĜěïČð×0.9V 900 1050 1350 mA ᶈ Output Voltage Temperature Characteristics ˚ċĊĖĜěçöç ïċĊĖĜěɾ˚ĻĶķĹðç IOUT1 =30mA -40ˆʽToprʽ85ˆ - ±100 - ppm/ ˆ ᶃ EN1 "H" Level Voltage V EN1H DCOUT=0V, Applied voltage to VEN, Voltage changes Lx to “H” level (*10) 0.65 - 6.0 V ᶅ EN1 "L" Level Voltage V EN1L DCOUT=0V, Applied voltage to V EN, Voltage changes Lx to “L” level (*10) VSS - 0.25 V ᶅ EN1 "H" Current I EN1H V IN1=VEN1=5.0V, DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ EN1 "L" Current I EN1L V IN1=5.0V, VEN1 =0V, DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ Soft Start Time t SS When connected to external components, VEN1 =0V → VIN1, IOUT1=1mA 0.5 0.9 2.5 ms ᶃ Latch Time t LAT VIN1=VEN1=5.0V, DCOUT=0.8×ċĊĖĜěïČð Short Lx at 1Ω resistance (*6) 1.0 - 20 ms ᶉ Short Protection Threshold Voltage VSHORT Sweeping DCOUT, VIN1=VEN1=5.0V, Short Lx at 1Ω resistance, DCOUT voltage which Lx becomes “L” level within 1ms 0.675 0.900 1.125 V ᶉ

˙ELECTRICAL CHARACTERISTICS (Continued)

• XCM519xC 1ch (DC/DC BLOCK) V DCOUT=1.8V, fOSC=1.2MHz, Ta=25℃ Test conditions: Unless otherwise stated, VIN1=5.0V, VDCOUT(E)= Nominal voltage NOTE: *1: Including hysteresis width of operating voltage. *2: EFFI = { ( output voltageʷoutput current ) öç( input voltageʷinput current) }ʷ100 *3: ON resistance (Њ)= (VIN - Lx pin measurement voltage) öç100mA *4: Design value *5: When temperature is high, a current of approximately 10ЖA (maximum) may leak. *6: Time until it short-circuits DCOUT with GND via 1 Њof resistor from an operational state and is set to Lx=0V from current limit pulse generating. *7: VDCOUT (E)+1.2V<2.7V, VIN=2.7V. *8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes. If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance. *9: Current limit denotes the level of detection at peak of coil current. * 1 0 : " H "ʹVINʙVIN - 1.2V, "L" ʹ+ 0.1V ʙ - 0.1V *11: XCM519A series exclude IPFM and DLIMT_PFM because those are only for the PFM control’s functions. * The electrical characteristics above are when the other channel is in stop mode. PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Output Voltageç VDCOUT When connected to external components, VIN1=VEN1=5.0V,IOUT1=30mA 1.764 1.800 1.836 V ᶃ Operating Voltage Rangeç VIN1 ç 2.7 - 6.0 V ᶃ Maximum Output Current I OUT1MAX When connected to external components, VIN1=DCOUT(E)V+2.0V,VEN1=1.0V (*8) 600 - - mA ᶃ ĜĝēĖ Voltageç VUVLO VEN1=VIN1ɼDCOUT=0V, Voltage which Lx pin holding “L” level (*1, *10) ç 1.00 1.40 1.78 V ᶄ ïğĊĔüøĀĈĊðç - 22 50 Supply Currentç IDD VIN1=VEN1=5.0V,DCOUT=DCOUT(E)×1.1V ïğĊĔüøĀĉĊðç - 15 33 ЖAç ᶅ Stand-by Currentç ISTB V IN1=5.0V,VEN1=0V,DCOUT=DCOUT(E)×1.1V - 0 1.0 ЖAç ᶅ Oscillation Frequency f OSC When connected to external components, VIN1=DCOUT(E)V+2.0V,VEN1=1.0V, IOUT1=100mA 1020 1200 1380 kHz ᶃ PFM Switching Current I PFM When connected to external components, VIN1=DCOUT(E)V+2.0V,VEN1=VIN1, IOUT1=1mA (*11) 120 160 200 mA ᶃ PFM Duty Limit D LIMIT_PFM V EN1=VIN1=(C-1)IOUT1=1mA (*11) - 200 % ᶄ Maximum Duty Ratio D MAX V IN1=VEN1=5.0V,DCOUT=DCOUT(E)×0.9V 100 - - % ᶄ Minimum Duty Ratio D MIN V IN1=VEN1=5.0V,DCOUT=DCOUT(E)×1.1V - - 0 % ᶄ Efficiency EFFI When connected to external components, VEN1=VIN1ʹDCOUT(E)+1.2V (*7) , IOUT1=100mAç - 92 - % ᶃ Lx SW "H" ON Resistance 1 RL XH V IN1=VEN1=5.0V,DCOUT=0V,ILX=100mA (*3) - 0.35 0.55 Ω ᶆ Lx SW "H" ON Resistance 2 RL XH V IN1=VEN1=3.6V,DCOUT=0V,ILX=100mA (*3) - 0.42 0.67 Ω ᶆ Lx SW "L" ON Resistance 1 RL XL V IN1=VEN1=5.0V (*4) - 0.45 0.66 Ω ʵ Lx SW "L" ON Resistance 2 RL XL V IN1=VEN1=3.6V (*4) - 0.52 0.77 Ω ʵ Lx SW "H" Leak Current (*5) ç ILEAKH V IN1=DCOUT=5.0V,VEN1=0V,LX=0V - 0.01 1.0 ЖAç ᶋ Current Limit (*9) ç ILIM V IN1=VEN1=5.0V,DCOUT=DCOUT(E)×0.9V 900 1050 1350 mA ᶈ Output Voltage Temperature Characteristicsç ˚DCOUT / (DCOUTɾ˚topr) IOUT1=30mA, -40ˆʽToprʽ85ˆ - ±100 - ppm/ ˆ ᶃ EN1 "H" Level Voltage V EN1H DCOUT=0V, Applied voltage to VEN1, Voltage changes Lx to “H” level (*10) çç 0.65 - 6.0 V ᶅ EN1 "L" Level Voltage V EN1L DCOUT=0V, Applied voltage to VEN1, Voltage changes Lx to “L” level (*10) çç VSS - 0.25 V ᶅ EN1 "H" Current I EN1H V IN1=VEN1=5.0V,DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ EN1 "L" Current I EN1L V IN1=5.0V,VEN1=0V,DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ Soft Start Time t SS When connected to external components, VEN1=0V→VIN1, IOUT1=1mA - 0.25 0.40 ms ᶃ Latch Time T LAT VIN1=VEN1=5.0V, DCOUT=0.8×ċĊĖĜěïČð Short Lx at 1Ω resistance (*6) ç 1.0 - 20 ms ᶉ Short Protection Threshold Voltageç VSHORT Sweeping DCOUT, VIN1=VEN1=5.0V, Short Lx at 1Ω resistance, DCOUT voltage which Lx becomes “L” level within 1ms ç 0.675 0.900 1.150 V ᶉ CL Dischargeç RDCHG V IN1=5.0V, LX=5.0V,VEN1=0V, DCOUT=Open 200 300 450 Ω ᶊ

˙ELECTRICAL CHARACTERISTICS (Continued)

• XCM519xD 1ch (DC/DC BLOCK) DCOUT=1.8V, f OSC=3.0MHz, Ta=25℃ Test conditions: Unless otherwise stated, VIN1=5.0V, VDCOUT(E)= Nominal voltage NOTE: *1: Including hysteresis width of operating voltage. *2: EFFI = { ( output voltageʷoutput current ) öç( input voltageʷinput current) }ʷ100 *3: ON resistance (Њ)= (VIN - Lx pin measurement voltage) öç100mA *4: Design value *5: When temperature is high, a current of approximately 10ЖA (maximum) may leak. *6: Time until it short-circuits DCOUT with GND via 1 Њof resistor from an operational state and is set to Lx=0V from current limit pulse generating. *7: VDCOUT (E)+1.2V<2.7V, VIN=2.7V. *8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes. If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance. *9: Current limit denotes the level of detection at peak of coil current. * 1 0 : " H "ʹVINʙVIN - 1.2V, "L" ʹ+ 0.1V ʙ - 0.1V *11: XCM519A series exclude IPFM and DLIMT_PFM because those are only for the PFM control’s functions. * The electrical characteristics above are when the other channel is in stop mode. PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Output Voltageç VDCOUT When connected to external components, VIN1=VEN1=5.0V, IOUT1=30mAç 1.764 1.800 1.836 V ᶃ Operating Voltage Rangeç VIN1 ç 2.7 - 6.0 V ᶃ Maximum Output Current I OUT1MAX When connected to external components, VIN1=DCOUT(E)V+2.0V,VEN1=1.0V (*8) ç 600 - - mA ᶃ ĜĝēĖ Voltageç VUVLO VEN1=VIN1ɼDCOUT=0V, Voltage which Lx pin holding “L” level (*1, *10) ç 1.00 1.40 1.78 V ᶄ ïğĊĔüøĀĈċð - 46 65 Supply Currentç IDD VIN1=VEN1=5.0V,DCOUT=DCOUT(E)×1.1V ïğĊĔüøĀĉċð - 21 35 ЖAç ᶅ Stand-by Currentç ISTB V IN1=5.0V,VEN1=0V, DCOUT=DCOUT(E)×1.1V - 0 1.0 ЖAç ᶅ Oscillation Frequency f OSC When connected to external components, VIN1=DCOUT(E)V+2.0V, VEN1=1.0V, IOUT1=100mAç 2550 3000 3450 kHz ᶃ PFM Switching Current I PFM When connected to external components, VIN1=DCOUT(E)V+2.0V, VEN1=VIN1, IOUT1=1mA (*11) ç 170 220 270 mA ᶃ PFM Duty Limit D LIMIT_PFM V EN1=VIN1=(C-1)IOUT1=1mA (*11) - 200 300 % ᶄ Maximum Duty Ratio D MAX V IN1=VEN1=5.0V, DCOUT=DCOUT(E)×0.9V 100 - - % ᶄ Minimum Duty Ratio D MIN V IN1=VEN1=5.0V, DCOUT=DCOUT(E)×1.1V - - 0 % ᶄ Efficiency EFFI When connected to external components, VEN1=VIN1ʹDCOUT(E)+1.2V (*7) ,IOUT1=100mAç - 86 - % ᶃ Lx SW "H" ON Resistance 1 RL XH V IN1=VEN1=5.0V, DCOUT=0V, ILX=100mA (*3) - 0.35 0.55 Ω ᶆ Lx SW "H" ON Resistance 2 RL XH V IN1=VEN1=3.6V, DCOUT=0V, ILX=100mA (*3) - 0.42 0.67 Ω ᶆ Lx SW "L" ON Resistance 1 RL XL V IN1=VEN1=5.0V (*4) - 0.45 0.66 Ω ʵ Lx SW "L" ON Resistance 2 RL XL V IN1=VEN1=3.6V (*4) - 0.52 0.77 Ω ʵ Lx SW "H" Leak Current (*5) ç ILEAKH V IN1=DCOUT=5.0V,VEN1=0V, LX=0V - 0.01 1.0 ЖAç ᶋ Current Limit (*9) ç ILIM V IN1=VEN1=5.0V, DCOUT=DCOUT(E)×0.9V 900 1050 1350 mA ᶈ Output Voltage Temperature Characteristicsç ˚DCOUT / (DCOUTɾ˚topr) IOUT1=30mA -40ˆʽToprʽ85ˆç - ±100 - ppm/ ˆ ᶃ EN1 "H" Level Voltage V EN1H DCOUT=0V, Applied voltage to VEN1, Voltage changes Lx to “H” level (*10) 0.65 - 6.0 V ᶅ EN1 "L" Level Voltage V EN1L DCOUT=0V, Applied voltage to VEN1, Voltage changes Lx to “L” level (*10) VSS - 0.25 V ᶅ EN1 "H" Current I EN1H V IN1=VEN1=5.0V, DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ EN1 "L" Current I EN1L V IN1=5.0V,VEN1=0V, DCOUT=0V - 0.1 - 0.1 ЖAç ᶇ Soft Start Time t SS When connected to external components, VEN1=0V→VIN1, IOUT1=1mA - 0.32 0.50 ms ᶃ Latch Time t LAT VIN1=VEN1=5.0V, DCOUT=0.8×ċĊĖĜěïČð Short Lx at 1Ω resistance (*6) ç 1.0 - 20 ms ᶉ Short Protection Threshold Voltageç VSHORT Sweeping DCOUT, VIN1=VEN1=5.0V, Short Lx at 1Ω resistance, DCOUT voltage which Lx becomes “L” level within 1ms ç 0.675 0.900 1.150 V ᶉ CL Dischargeç RDCHG V IN1=5.0V, LX=5.0V, VEN1=0V, DCOUT=Open 200 300 450 Ω ᶊ

˙ELECTRICAL CHARACTERISTICS (Continued) ˔PFM Switching Current (IPFM) by Oscillation Frequency and Output Voltage 1.2MHz (mA) SETTING VOLTAGE MIN. TYP. MAX. VDCOUT(E)≦1.2Ｖ 140 180 240 1.2V＜VDCOUT(E)≦1.75Ｖ 130 170 220 1.8V≦VDCOUT(E) 120 160 200 3.0MHz (mA) SETTING VOLTAGE MIN. TYP. MAX. VDCOUT(E)≦1.2Ｖ 190 260 350 1.2V＜VDCOUT(E)≦1.75Ｖ 180 240 300 1.8V≦VDCOUT(E) 170 220 270 ˔Measuring Maximum IPFM Limit, VIN Voltage fOSC 1.2MHz 3.0MHz (C-1) V DCOUT(E)+0.5V V DCOUT(E)+1.0V Minimum operating voltage is 2.7V ˔Soft-Start Time Chart (XCM519xC/ XCM519xD Series Only) ç PRODUCT SERIES fOSC OUTPUT VOLTAGE MIN. TYP. MAX. 1200kHz 0.8ʽVDCOUT(E)<1.5 - 250 400Жsç 1200kHz 1.5ʽVDCOUT(E)<1.8 - 320 500Жsç 1200kHz 1.8ʽVDCOUT(E)<2.5 - 250 400Жsç XCM519AC 1200kHz 2.5ʽVDCOUT(E)<4.0 - 320 500Жsç 1200kHz 0.8ʽVDCOUT(E)<2.5 - 250 400Жsç XCM519BC 1200kHz 2.5ʽVDCOUT(E)<4.0 - 320 500Жsç 3000kHz 0.8ʽVDCOUT(E)<1.8 - 250 400Жsç XCM519xD 3000kHz 1.8ʽVDCOUT(E)<4.0 - 320 500Жsç

˙ELECTRICAL CHARACTERISTICS (Continued)

• XCM519xx 2ch (REGULATOR BLOCK) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Bias Voltage (*1) VBIAS VEN2 =VBIAS,VIN2=VROUT(T)+0.3V 2.5 - 6.0 V ʵ Input Voltage (*2) VIN2 VBIAS=VEN2=3.6V 1.0 - 3.0 V ʵ -0.02 V OUT(T) (*4) +0.02 Output Voltage V ROUT(E) (*3) VBIAS=VEN2=3.6V,VIN2=VROUT(T)+0.3V, IROUT=1mA E-0 (*5) V ʵ Maximum Output Current1 IOUTMAX1 VEN2 =VBIAS ,VBIAS -VROUT(T)ʾ1.2V VIN2 =VROUT(T)+0.5V 200 - - mA ᶌ Maximum Output Current2 IOUTMAX2 VEN2 =VBIAS ,VBIAS -VROUT(T)ʾ1.3V VIN2 =VROUT(T)+0.5V 300 - - mA ᶌ Maximum Output Current3 IOUTMAX3 VEN2 =VBIAS ,VBIAS -VROUT(T)ʾ1.5V VIN2 =VROUT(T)+0.5V 400 - - mA ᶌ Load Regulation ˚VROUT VBIAS=VEN2=3.6V, VIN2=VROUT(T)+0.3V, 1mAʽIVROUTʽ100mA - 8 17 mV ʵ Dropout Voltage1 Vdif1 (*7) V EN2 =VBIAS , IOUT=100mA E-1 (*6) mV ᶌ Dropout Voltage2 Vdif2 (*7) V EN2 =VBIAS , IOUT=200mA E-2 (*6) mV ᶌ Dropout Voltage3 Vdif3 (*7) V EN2 =VBIAS , IOUT=300mA E-3 (*6) mV ᶌ Dropout Voltage4 Vdif4 (*7) V EN2 =VBIAS , IOUT=400mA E-4 (*6) mV ᶌ Supply Current 1 I BIAS VBIAS=VEN2=3.6V,VIN2=VROUT(T)+0.3V VROUT(T)=OPEN 8 25 45 ЖA ᶌ Supply Current 2 I IN2 VBIAS=VEN2=3.6V, VIN2=VROUT(T)+0.3V VROUT(T)=OPEN - 1.0 2.5 ЖA ᶌ VROUT(T)ʾ0.95V,VBIAS=VEN2=3.6V, VIN2=VROUT(T)+0.05V, VROUT=VROUT(T) - 0.05V Bias Current (*10) I BIASMAX VROUT(T)ʻ0.95V,VBIAS=VEN2=3.6V, VIN2=1.0V, VROUT=VROUT(T) - 0.05V - 1.0 2.5 mA ᶌ Stand-by Current 1 I BIAS_STB V BIAS=6.0V,VIN2=3.0V, VEN2=VSS2 - 0.01 0.10 ЖA ᶌ Stand-by Current 2 I IN_STB V BIAS=6.0V,VIN2=3.0V, VEN2=VSS2 - 0.01 0.35 ЖA ᶌ VROUT(T)ʾ1.3V VROUT(T)+1.2VʽVBIASʽ6.0V, VIN2=VROUT(T)+0.3V, VEN2 =VBIAS , IOUT=1mA Bias Regulation ˚VROUT / (˚VBIASɾVROUT) VROUT(T)ʻ1.3V 2.5VʽVBIASʽ6.0V, VIN2=VROUT(T)+0.3V, VEN2 =VBIAS , IOUT=1mA - 0.01 0.3 %/V ᶌ VROUT(T)ʾ0.90V,VROUT(T)+0.1VʽVIN2ʽ3.0V, VBIAS=VEN2=3.6V,IOUT=1mA Input Regulation ˚VROUT / (˚VIN2ɾVROUT) VROUT(T)ʻ0.90V,1.0VʽVIN2ʽ3.0V VBIAS=VEN2=3.6V,IOUT=1mA - 0.01 0.1 %/V ᶌ Bias Voltage UVLO V BIAS_UVLO V EN2 =VBIAS,VIN2 =VROUT(T)+0.3V,IOUT=1mA 1.37 2.0 2.5 V ᶌ Input Voltage UVLO V IN_UVLO V BIAS=VEN2=3.6V, IVROUT=1mA 0.07 0.4 0.6 V ᶌ VBIAS Ripple Rejection V BIAS_PSRR VBIAS=3.6VDC+0.2Vp-pAC,VIN2=VROUT(T)+0.3V, IOUT=30mA,f=1kHz - 40 - dB ᶍ VIN2 Ripple Rejection V IN_PSRR VIN2=VOUT(T)+0.3VDC+0.2Vp-pAC, VBIAS=3.6V, IOUT=30mA,f=1kHz - 60 - dB ᶍ

˙ELECTRICAL CHARACTERISTICS (Continued) ˔XCM519xx 2ch (REGULATOR BLOCK) (Continued) ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Output Voltage Temperature Characteristics ˚VROUT/ (˚ToprɾVROUT) VBIAS=VEN2=3.6V, VIN2=VROUT(T)+0.3V , IOUT=30mA, - 40ˆʽ Topr ʽ85ˆ - ʶ100 - ppm/ ˆ ᶌ Limit Current ILIM VROUT=VROUT(T)ʷ0.95, VBIAS=VEN2=3.6V, VIN2=VROUT(T)+0.3V 400 - - mA ᶌ Short Current ISHORT VBIAS=VEN2=3.6V, VIN2=VROUT(T)+0.3V, VROUT=0V - 80 - mA ᶌ Thermal Shutdown Detect Temperature TTSD Junction Temperature - 150 - ˆ ᶌ Thermal Shutdown Release Temperature TTSR Junction Temperature - 125 - ˆ ᶌ TSD Hysteresis Width T TSDʵTTSR - 25 - ˆ ᶌ CL Auto-Discharge Resistanceç RDCHG VBIAS=3.6V, VIN2= VROUT(T)+0.3V, VEN2= VSS VROUT=VROUT(T) 290 430 610 Њç ᶌ EN2 "H" Level Voltage V EN2H VBIAS=3.6V,VIN2=VROUT(T)+0.3V 0.75 - 6.0 V ᶌ EN2 "L" Level Voltage V EN2L VBIAS=3.6V,VIN2=VROUT(T)+0.3V - - 0.16 V ᶌ EN2 "H" Level Current I EN2H VBIAS=VEN2=6.0V, VIN2=VROUT(T)+0.3V -0.1 - 0.1 ЖA ᶌ EN2 "L" Level Current I EN2L VBIAS=6.0V, VEN2=VSS,VIN2=VROUT(T)+0.3V -0.1 - 0.1 ЖA ᶌ Soft Start Time (*11) tSS VBIAS=3.6VɺVIN2=VROUT(T)+0.3VɺIOUT=1mA VEN2=0Vˠ3.6V 100 - 410 Жs ᶎ E-0 OUTPUT VOLTAGE (V) NOMINAL OUTPUT VOLTAGE (V) VROUT VROUT(T) MIN. MAX. 0.70 0.680 0.720 0.75 0.730 0.770 0.80 0.780 0.820 0.85 0.830 0.870 0.90 0.880 0.920 0.95 0.930 0.970 1.00 0.980 1.020 1.05 1.030 1.070 1.10 1.080 1.120 1.15 1.130 1.170 1.20 1.180 1.220 1.25 1.230 1.270 E-0 OUTPUT VOLTAGE (V) NOMINAL OUTPUT VOLTAGE (V) VROUT VROUT(T) MIN. MAX. 1.30 1.280 1.320 1.35 1.330 1.370 1.40 1.380 1.420 1.45 1.430 1.470 1.50 1.480 1.520 1.55 1.530 1.570 1.60 1.580 1.620 1.65 1.630 1.670 1.70 1.680 1.720 1.75 1.730 1.770 1.80 1.780 1.820 ˙OUTPUT VOLTAGE CHART NOTE: * 1: Please use Bias voltage VBIAS within the range VBIAS –VROUT(T)ʾ0.9V * 2: Please use Input voltage VIN within the range VINʽVBIAS * 3: VROUT(E) : Effective output voltage * 4: VROUT(T) : Specified output voltage * 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART * 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART * 7: Vdif={V IN21 (*8) -VROUT1 (*9) * 8: VIN21 : The input voltage when VOUT1 appears as input voltage is gradually decreased. * 9: VROUT1 : A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when V BIAS<3.0V at VIN2= VBIAS, VBIASʾ3.0V at VIN2=VBIAS input to the VBIAS pin. *10 : IBIASMAX : A supply current at the VBIAS pin providing for the output current (IVROUT) . *11: tSS : Time that VROUT becomes more than VROUT(E)ʷ0.9V after the EN2 pin is input 0.75V as EN2 “H” level voltage. * The electrical characteristics above are when the other channel is in stop mode.

DROPOUT VOLTAGE1 (mV) Vdif1 NOMINAL OUTPUT VOLTAGE (V) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) VROUT(T) Vgs (*1) (V) TYP. MAX. Vgs (V) TYP. MAX. Vgs (V) TYP. MAX. Vgs (V) TYP. MAX. Vgs (V) TYP. MAX. 0.80 2.20 200 2.50 200 2.80 200 3.40 200 4.20 200 0.90 2.10 100 2.40 100 2.70 100 3.30 100 4.10 100 1.00 2.00 43 68 2.30 40 61 2.60 35 56 3.20 49 4.00 1.10 1.90 46 72 2.20 41 63 2.50 36 58 3.10 32 50 3.90 29 45 1.20 1.80 48 75 2.10 42 65 2.40 38 59 3.00 32 51 3.80 29 46 1.30 1.70 51 81 2.00 43 68 2.30 40 61 2.90 33 52 3.70 29 47 1.40 1.60 54 87 1.90 46 72 2.20 41 63 2.80 34 53 3.60 30 47 1.50 1.50 57 92 1.80 48 75 2.10 42 65 2.70 34 54 3.50 30 48 1.60 1.40 63 97 1.70 51 81 2.00 43 68 2.60 35 56 3.40 31 48 1.70 1.30 70 113 1.60 54 87 1.90 46 72 2.50 36 58 3.30 31 49 1.80 1.20 79 154 1.50 57 92 1.80 48 75 2.40 38 59 3.20 32 49 ˙DROPOUT VOLTAGE CHART *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VROUT (T).

DROPOUT VOLTAGE 2 (mV) Vdif2 NOMINAL OUTPUT VOLTAGE (V) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) VROUT(T) Vgs (*1) (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX 0.80 2.20 200 2.50 200 2.80 200 3.40 200 4.20 200 0.90 2.10 131 2.40 117 2.70 110 3.30 100 4.10 100 1.00 2.00 90 139 2.30 81 123 2.60 74 111 3.20 64 98 4.00 58 88 1.10 1.90 96 146 2.20 85 127 2.50 76 114 3.10 65 101 3.90 59 90 1.20 1.80 101 154 2.10 88 131 2.40 78 117 3.00 67 103 3.80 59 91 1.30 1.70 108 170 2.00 90 139 2.30 81 123 2.90 68 106 3.70 60 92 1.40 1.60 115 179 1.90 96 146 2.20 85 127 2.80 70 108 3.60 61 93 1.50 1.50 122 192 1.80 101 154 2.10 88 131 2.70 72 110 3.50 62 94 1.60 1.40 135 206 1.70 108 170 2.00 90 139 2.60 74 111 3.40 63 95 1.70 1.30 154 248 1.60 115 179 1.90 96 146 2.50 76 114 3.30 63 97 1.80 1.20 175 353 1.50 122 192 1.80 101 154 2.40 78 117 3.20 64 98 ˙DROPOUT VOLTAGE CHART (Continued) *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VROUT (T).

DROPOUT VOLTAGE 3 (mV) Vdif3 NOMINAL OUTPUT VOLTAGE (V) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) VVROUT(T) Vgs (*1) (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX 0.80 2.20 134 200 2.50 117 200 2.80 109 200 3.40 200 4.20 200 0.90 2.10 138 204 2.40 119 181 2.70 111 167 3.30 148 4.10 132 1.00 2.00 145 216 2.30 130 190 2.60 115 170 3.20 98 151 4.00 91 134 1.10 1.90 153 227 2.20 134 197 2.50 117 176 3.10 101 153 3.90 92 137 1.20 1.80 161 239 2.10 138 204 2.40 119 181 3.00 105 155 3.80 93 139 1.30 1.70 173 264 2.00 145 216 2.30 130 190 2.90 107 159 3.70 93 140 1.40 1.60 184 289 1.90 153 227 2.20 134 197 2.80 109 163 3.60 94 141 1.50 1.50 196 313 1.80 161 239 2.10 138 204 2.70 111 167 3.50 95 142 1.60 1.40 222 344 1.70 173 264 2.00 145 216 2.60 115 170 3.40 96 145 1.70 1.30 256 442 1.60 184 289 1.90 153 227 2.50 117 176 3.30 97 148 1.80 1.20 - - 1.50 196 313 1.80 161 239 2.40 119 181 3.20 98 151 ˙DROPOUT VOLTAGE CHART (Continued) *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VROUT (T).

DROPOUT VOLTAGE 4(mV) Vdif4 NOMINAL OUTPUT VOLTAGE (V) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) VVROUT(T) Vgs (*1) (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX Vgs (V) TYP MAX 0.80 2.20 195 277 2.50 164 272 2.80 150 250 3.40 131 246 4.20 118 231 0.90 2.10 201 277 2.40 170 272 2.70 153 250 3.30 134 246 4.10 119 231 1.00 2.00 206 277 2.30 189 272 2.60 157 250 3.20 136 246 4.00 121 231 1.10 1.90 218 277 2.20 195 272 2.50 164 250 3.10 139 246 3.90 125 231 1.20 1.80 231 334 2.10 201 277 2.40 170 248 3.00 142 215 3.80 128 189 1.30 1.70 248 376 2.00 206 296 2.30 189 255 2.90 146 219 3.70 128 191 1.40 1.60 264 418 1.90 218 315 2.20 195 266 2.80 150 224 3.60 129 193 1.50 1.50 281 460 1.80 231 334 2.10 201 277 2.70 153 228 3.50 129 195 1.60 1.40 - - 1.70 248 376 2.00 206 296 2.60 157 234 3.40 131 198 1.70 1.30 - - 1.60 264 418 1.90 218 315 2.50 164 241 3.30 134 202 1.80 1.20 - - 1.50 281 460 1.80 231 334 2.40 170 248 3.20 136 205 ˙DROPOUT VOLTAGE CHART (Continued) *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VROUT (T).

˙TYPICAL APPLICATION CIRCUIT ˙OPERATIONAL EXPLANATION ˔DC/DC BLOCK The DC/DC block of the XCM519 series consis ts of a reference voltage source, ramp wave circuit, error amplifier, PWM comparator, phase compensation circuit, outpu t voltage adjustment resistors, P-channel MOSFET driver transistor, N-channel MOSFET switching transistor for the synchronous switch, curr ent limiter circuit, UVLO circ uit and others. (See the block diagram above.)ç The series ICs compare, using the error amplifier, the voltage of the internal voltage reference source with the feedback voltage from the DCOUT pin through split resist ors, R1 and R2. Phase compensation is performed on the resulting error amplifier output, to input a signal to the PWM com parator to determine the turn-on time during PWM operation. The PWM comparator compares, in terms of voltage level, the signal from the error amplifier with the ramp wave from the ramp wave circuit, and delivers the resulting output to the buffer dr iver circuit to cause the Lx pin to output a switching duty cycle. This process is continuously performed to ensure stable output voltage. The curr ent feedback circuit monitors the P-channel MOS driver transistor current for each switching operation, and modulates t he error amplifier output signal to provide multiple feedback signals. This enables a stable feedback loop even when a lo w ESR capacitor such as a cera mic capacitor is used ensuring stable output voltage. ç <Reference Voltage Source> The reference voltage source provides the reference voltage to ensure stable output voltage of the DC/DC converter.ç ç <Ramp Wave Circuit> The ramp wave circuit determines switching frequency. The frequenc y is fixed internally and can be selected from 1.2MHz or 3.0MHz. Clock pulses generated in this circuit are used to produce ramp waveforms needed for PWM operation, and to synchronize all the internal circuits. ç <Error Amplifier> The error amplifier is designed to monitor output voltage. T he amplifier compares the reference voltage with the feedback voltage divided by the internal split resistors, R1 and R2. When a voltage is lower than the reference voltage is fed back, the output voltage of the error amplifier increases. The gain and frequency characteristi cs of the error amplifier output are fixed internally to deliver an optimized signal to the mixer. ˔çDC/DC BLOCKç fOSC=3.0MHz L : 1.5 ЖH (NR3015 TAIIYO YUDEN) CIN1 : 10 ЖF (Ceramic) CL1 : 10 ЖF ( C e r a m i c ) CBIAS : 1 ЖF ( C e r a m i c ) CIN2 : 1 ЖF ( C e r a m i c ) CL2 : 4.7 ЖF (Ceramic) ˔çDC/DC BLOCKç fOSC=1.2MHz L : 4.7 ЖH (NR4018 TAIIYO YUDEN) CIN1 : 10 ЖF (Ceramic) CL1 : 10 ЖF (Ceramic) CBIAS : 1 ЖF (Ceramic) CIN2 : 1 ЖF (Ceramic) CL2 : 4.7 ЖF (Ceramic) VIN L CIN1 CBIAS 4 9 AVSS LxDCOUT PVSS EN1 VIN1 VIN2 VSS2 VROUT EN2 VBIAS NC CIN2 CL1 CL2 EN2 VROUT EN1 DCOUT

ç ç ˙OPERATIONAL EXPLANATION (Continued) ç <Current Limit> The current limiter circuit of the XCM519 series monitors the current flowing through the P-channel MOS driver transistor connected to the Lx pin, and features a combination of the current limit mode and the operation suspension mode. ç ᶃçWhen the driver current is greater than a specific level, the current limit function operates to turn off the pulses from the Lx pin at any given timing. ᶄçWhen the driver transistor is turned off, the limiter circuit is then released from the current limit detection state. ᶅçAt the next pulse, the driver transistor is turned on. However, the transistor is immediately turned off in the case of an over current state. ᶆçWhen the over current state is eliminated, the IC resumes its normal operation. The IC waits for the over current state to end by repeating the steps ᶃçthrough ᶅ. If an over current state continues for a few ms and the above three steps are repeatedly performed, the IC performs the function of latching the OFF state of the driver transistor, and goes into operation suspension mode. Once th e IC is in suspension mode, operations can be resumed by either turning the IC off via the CE/MOD E pin, or by restoring power to the V IN pin. The suspension mode does not mean a complete shutdown, but a state in which pulse output is suspended; therefore, the internal circuitry remains in operation. The current limit of the XCM519 series can be set at 1050mA at typical. Besides, ca re must be taken when laying out the PC Board, in order to prevent miss -operation of the current limit m ode. Depending on the state of the PC Board, latch time may become longer and latch operation may not work. In order to avoi d the effect of noise, the board should be laid out so that input capacitors are placed as close to the IC as possible.ç ç ç ç ç ç <Short-Circuit Protection> The short-circuit protection circuit monitors the internal R1 and R2 divider voltage from the DCOUT pin. In case where output is accidentally shorted to the Ground and when the FB point voltage decreases less than half of the reference voltage (Vref) and a current more than the I LIM flows to the driver transistor, the s hort-circuit protection quickly operates to turn off and to latch the driver transistor. In latch state, the operation can be resumed by either turning the IC off and on via the EN1 pin, or by restoring power supply to the VIN1 pin. When sharp load transient happens, a voltage drop at t he DCOUT pin is propagated to FB point through C FB, as a result, short circuit protection may operate in the voltage higher than 1/2 VOUT voltage. ç <UVLO Circuit> When the VIN1 pin voltage becomes 1.4V or lower, t he P-channel output driver transistor is forced OFF to prevent false pulse output caused by unstable operation of the internal circuitry. When the V IN1 pin voltage becomes 1.8V or higher, switching operation takes place. By releasing the UVLO function, the IC performs the soft start function to init iate output startup operation. The soft start func tion operates even when the VIN pin voltage falls momentarily below the UVLO operating voltage. The UVLO circuit does not cause a complete shutdown of the IC, but causes puls e output to be suspend ed; therefore, the internal circuitry remains in operation. ç ç ç ç ç ç ç Limitʻ#ms Limitʼ#ms

ç ç ˙OPERATIONAL EXPLANATION (Continued) ç <PFM Switch Current> In the PFM control operation, until coil cu rrent reaches to a specified level (D LIMIT_PFM), the IC keeps the P-ch MOSFET on. In this case, on-time (tON) that the P-ch MOSFET is kept on can be given by the following formula. tON= LʷIPFM (VIN1ʵVDCOUT) ˠIPFMᶃ ç <PFM duty Limit> In the PFM control operation, the PFM duty limit (DLIMT_PFM) is set to 200% (TYP.). Therefor e, under the condition that the duty increases (e.g. the condition that the step-down ratio is sma ll), it’s possible for P-ch MOSFET to be turned off even when coil current doesn’t reach to IPFM. çˠ IPFMᶄ ç ʻCL High Speed Dischargeʼ XCM519xC/ XCM519xD series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the CE pin which enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the LX pin and the VSS pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it may avoid application malfunction. Discharge time of the output capacitor (CL) is set by the CL auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R] and an output capacitor value (CL) as Н(Н=C x R), discharge time of the output voltage after discharge via the N channel transistor is calculated by the following formula. V = VDCOUT(T)ʷe -t /Н or t = НLn ( V / VDCOUT(T) ) V : Output voltage after discharge VDCOUT (T): Output voltage t: Discharge time Н: CʷR C= Capacitance of Output capacitor (CL) R= CL auto-discharge resistance Output Voltage Dischage Characteristics Rdischg （）= 300Ω TYP Discharge Time t (ms) 100 0 1 02 03 04 05 06 07 08 09 0 1 0 0 CL=10uF CL=20uF CL=50uF ①図 IPFM Ton Lx I Lx IPFM 0mA ②図 IPFM IPFM 0mA Lx I Lx FOSC 最大IPFM制限 PFM Duty Limit

ç ˙OPERATIONAL EXPLANATION (Continued) ˔Voltage Regulator BLOCKç The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel MOSFET which is connected to the VROUT pin is then driven by the subsequent output signal. The output voltage at the VROUT pin is controlled & stabilized by a system of negative feedback. VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase, the VBIAS pin supplies output current also. VIN2 pin is connected to a driver transistor and provides output current. In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=VBIAS – VROUT (T)) of the driver transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of thermal shutdown circuit, the driver transistor circuit is forced OFF when VBIAS or VIN2 voltage goes lower than UVLO voltage. Further, the IC's internal circuitry can be shutdown via the EN2 pin's signal. ç ç Figure 1: XC6601B Series <Low ESR Capacitor>ç With the XCM519 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (CL2) should be connected as close to VROUT pin and VSS pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an bias capacitor (CBIAS ) of 1.0ЖF between the VBIAS pin and the VSS pin. Also, please connect an input capacitor (C IN2) of 1.0 ЖF between the V IN2 pin and the V SS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (C BIAS, CIN2, CL2 ) which does not depend on bias or temperature too much. The table below shows recommended values of CBIAS, CIN, CL. ç ç Recommended Values of CBIAS, CIN2, CL2 BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR NOMINAL VOLTAGE CBIAS CIN2 CL2

˙OPERATIONAL EXPLANATION (Continued) <Soft-start> With the XCM519, the inrush current from V IN2 to VROUT for charging CL at start-up can be reduced and makes the V IN2 stable. The soft-start time is optimized to 240ЖA (TYP.) at VROUT=1.2V internally. Soft-start time is defined as the VROUT reaches 90% of VROUT (E) from the time when CE H threshold 0.75V is input to the CE pin. <CL High Speed Auto-Discharge>ç XCM519 series can quickly discharge the el ectric charge at the output capacitor (C L) when a low signal to the EN2 pin which enables a whole IC circuit put into OFF state, is i nputted via the N-channel trans istor located between the V ROUT pin and the VSS pin. When the IC is disabled, electr ic charge at the output capacitor (C L) is quickly discharged so that it could avoids malfunction. At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (C L) is set by the C L auto-discharge resistance (R) and the output capacitor (C L). By setting time constant of a C L auto-discharge resistance value [R] and an output capacitor value (C L) as Н(Н=C x R), the output voltage after discharge via the N channel transistor is calculated by the following formulas. ç ç V = VROUT(E)x e –t/Н, or ｔ=τln（VROUT(E) / V） V : Output voltage after discharge, VROUT(E) : Output voltage, t: Discharge time, Н: CL auto-discharge resistance RʷOutput capacitor (CL) value C <Current Limit, Short-Circuit Protection>ç The XCM519 series’ fold-back circuit operates as an output curr ent limiter and a short protecti on of the output pin. When the load current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is shorted to the VSS level, current flows about 50mA. <Thermal Shutdown Circuit (TSD) >ç When the junction temperature of t he built-in driver transistor reaches the temperature limit level (150 ˆ TYP.), the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of th e thermal shutdown release temperature (135ˆ TYP.). ç ç ç <Under Voltage Lock Outç(UVLO)ç>ç When the VBIAS pin voltage drops below 2.0V (TYP.) or V IN2 pin voltage drops below 0.4V (TYP.), the output driver transistor is forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin turned in the ON state and start to operate voltage regulation.ç ç Inrush Current IRUSH (mA) EN2 Input Voltage VEN2(V) Figure2: Example of the inrush current wave form at IC start-up. Figure3: Timing chart at IC start-up

˙OPERATIONAL EXPLANATION (Continued)ç <EN2 Pin>ç The IC internal circuitry can be shutdown via the signal from the EN2 pin with the XCM519 series. In shutdown mode, output at the VROUT pin will be pulled down to the VSS level via R1 & R2. However, as for the XCM519 series, the CL auto-discharge resistor is connected in parallel to R1 and R2 while the power supply is applied to the VIN2 pin. Therefore, time until the VROUT pin reaches the VSS level becomes short. The EN2 pin of XCM519 has pull-down circuitry so that EN2 input current increase during IC operation. The EN2 pin of XCM519 does not have pull-down circuitry so that logic is not fixed w hen the CE pin is open. If the EN2 pin voltage is taken from V BIAS pinçor VSS pin then logic is fixed and the IC will operate normally. Ho wever, supply current may increase as a result of through current in the IC's internal circuitry when medium voltage is input. ç ˙NOTE ON USE When the DC/DC converter and the VR are connected as VIN1=VBIAS, VDCOUT=VIN2, the following points should be noted. 1. When the DC/DC load is changed drastically during a light load of the VR, a fluctuation may happen in tenths of mV. This value can be reduced by increasing C L1 load capacitance at the DC/DC in order to reduce a voltage drop during load transient. 2. It is recommended that both C IN1 and CBIAS are connected to each pin separately. When one capacitor is used instead of the two, this capacitor should be placed in 10 ЖF or more as close as the VIN1 and the PGND (AGND) pins of the DC/DC circuit. Please ensure it by testing on the actual product design. 3. It is recommended that both C L1 and CIN2 are connected to each pin separately. When one capacitor is used instead of the two, this capacitor should be selected in 4.7ЖF or bigger. Please ensure it by testing on the actual product design. 4. C L2 of the VR is recommended 4.7 ЖA. When larger value is used in C L2, the larger value is also used in C L1 as in proportional. Please be noted that when C L2 capacitance of the VR is getting lar ge, an inrush current increases at VR start-up, DC/DC short circuit protection starts to operate, as a result, the IC may happen to stop. 20μs/div 立ち上がり 立下り 50μs/div 1ch:DC/DC VOUT:50mV/div 2ch:VR VOUT:50mV/div 4ch:VR IOUT:200mA/div 1ch:DC/DC VOUT:50mV/div 2ch:VR VOUT:50mV/div 4ch:VR IOUT:200mA/div 50us/div EN2(5V/div) DCOUT(1V/div) VROUT(1V/div) IIN2(500mA/div) * VR inrush current I IN2 makes DC/DC short-circuit protection to start, as a result, the IC may happen to stop. The left waver forms are taken at C L1=10Ж, C L2=10ЖF(in contrast to the recommended 4.7ЖF). However, it improves when CL1=20ЖF.

˙NOTE ON USE (Continued) 5. When the input-output voltage differential is small in the DC/DC converter and heavy load condition, a duty cycle is getting large and keeps the 100% duty cycle in a several period cycles. At the time of duty cycle transition to 100% or from 100%, noise may appear on the voltage regulator output. Please evaluat e this on the actual design board when the condition is in small input-output voltage differential and heavy load. 6. When the load is changed at the DC/DC converter, ringing may happen in some load conditions of DC/DC and VR at the timing of turn on and turn off. The ringing can be reduced by increasing C IN1 capacitance or placing a resistor over 10kЊ between VIN1 and VBIAS pins. 7. In order to turn off the input voltage, the EN2 pin should be turned off first. If the input voltage is turned off with keeping VR operation, the VROUT voltage goes up instantaneously as a result of the VR bias voltage transient. 8. When the DCOUT pin is connected to the V IN2 pin and the bias voltage (V BIAS) is taken from the other power supply, EN1 and EN2 should be started up 10Жs later than VBIAS. If EN1 and EN2 is turned on within 10 Жs, inrush current like 1A may happen which result in starting the DC/DC short-circuit protection. 9. It is recommended to test this in the actual product design board. <DC/DC BLOCK> 1. The XCM519 series is designed for use with ceramic output capacitors. If, however, the potential difference is too large between the input voltage and the output vo ltage, a ceramic capacitor may fail to absorb the resulting high switching energy and oscillation could occur on the output. If the input-out put potential difference is large, connect an electrolytic capacitor in parallel to compensate for insufficient capacitance. 2. Spike noise and ripple voltage arise in a switching regulato r as with a DC/DC converter. These are greatly influenced by external component selection, such as the coil inductance, capacitance values, and board layout of external components. Once the design has been completed, verification with actual components should be done. 3. As a result of input-output voltage and load conditions, oscillation frequency goes to 1/2, 1/3, and continues, then a ripple may increase. 4. When input-output voltage differential is large and light load conditions, a small duty cycle comes out. After that, 0%duty cycle may continue in several periods. 5. When input-output voltage di fferential is small and heavy load conditi ons, a large duty cycle comes out and may continues100% duty cycle in several periods. 6. With the IC, the peak current of the coil is controlled by the current limit circuit. Since the peak current increases whe n dropout voltage or load current is high, current limit starts operation, and this can lead to instability. When peak current becomes high, please adjust the coil inductance value and fully check the circuit operation. In addition, please calculate the peak current according to the following formula: Ipk = (VIN1-VDCOUT)× OnDuty /(2×L×fOSC) + IOUT L: Coil Inductance Value fOSC: Oscillation Frequency 200us/div VIN(5V/div) DCOUT(500mV/div) VROUT(500mV/div)

˙NOTE ON USE (Continued) 7. When the peak current which exceeds limit current flows within the specified time, the built-in P-ch driver transistor turns off. During the time until it detects limit current and before the built-in transistor can be turned off, the current for limit curr ent flows; therefore, care must be taken when selecting the rating for the external components such as a coil. 8.ç Care must be taken when laying out the PC Board, in order to prevent misoperation of the current limit mode. Depending on the state of the PC Board, latch time may become longer and latch operation may not work. In order to avoid the effect of noise, the board should be laid out so that input capacitors are placed as close to the IC as possible.ç 9.ç Use of the IC at voltages below the recommended voltage range may lead to instability.ç 10. This IC should be used within the stated absolute maxi mum ratings in order to prevent damage to the device. 11. When the IC is used in high temperature, output voltage may increase up to inpu t voltage level at no load because of the leak current of the driver transistor.ç 12.çThe current limit is set to 1350mA (MAX.) at typical. However, the current of 1350m A or more may flow. In case that the current limit functions while the DCOUT pin is shorted to the GND pin, when P-ch MOSFET is ON, the potential difference for input voltage will occur at both ends of a coil. For this, the time rate of coil current becomes large. By contrast, when N-ch MOSFET is ON, there is almost no potential difference at both ends of the coil since the DCOUT pin is shorted to the GND pin. Consequently, the time rate of coil current becomes quite small. According to t he repetition of this operation, and the delay time of the circuit, coil current will be converged on a certain current value, exceeding the amount of current, which is supposed to be limited originally. Even in this case, however, after the over current state continues for several ms, the circuit will be latched. A coil should be used within the stated absolute maximum rating in order to prevent damage to the device. çᶃ Current flows into P-ch MOSFET to reach the current limit (ILIM). ᶄThe current of ILIM or more flows since the delay time of the circuit o ccurs during from the detecti on of the current limit to OFF of P-ch MOSFET. ᶅBecause of no potential difference at both ends of the coil, the time rate of coil current becomes quite small. ᶆLx oscillates very narrow pulses by the current limit for several ms. ᶇThe circuit is latched, stopping its operation. ç ç 13.ç In order to stabilize V IN1’s voltage level and oscillation frequency, we recommend that a by-pass capacitor (C IN) be connected as close as possible to the VIN1 & VSS pins.ç 14.ç High step-down ratio and very light load may lead an intermittent oscillation.ç 15.ç During PWM / PFM automatic switching mode, operating may become unstable at transition to continuous mode. Please verify with actual parts.ç ç ç LX ILX ILIM Limit > ê mS① Delay ms <External Components>

ç ˙NOTE ON USE (Continued) 16.ç Please note the inductance value of the coil. The IC may enter unstable operation if the combination of ambient temperature, setting voltage, oscillation frequency, and L value are not adequate. In the operation range close to the maximum duty cycle, The IC may happen to enter unstable output voltage operation even if using the L values listed below.ç ç ç ç <Regulator BLOCK> 1. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. Please keep the resistance low between VBIAS, VIN2 and VSS wiring in particular. 2. Please wire the bias capacitor (CBIAS), input capacitor (CIN2) and the output capacitor (CL2) as close to the IC as possible. 3. Capacitance values of these capacitors (C BIAS, CIN2, CL2) are decreased by the influences of bias voltage and ambient temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence. 4. In case of the output capacitor more than C L=22ЖF is used, ringing of input current occurs when rising time. 5. V IN2 and EN2 should be applied at least 10Жs after the bias voltage VBIAS reaches the requested voltage. If VIN2 and EN2 are applied within 10Жs, inrush current like 1A may occurs. ˔Instructions of pattern layoutsç 1.ç Please use this IC within the stated absolute maximum rati ngs. The IC is liable to malfunction should the ratings be exceeded.ç 2.ç In order to stabilize V IN1ɾVIN2ɾVBIASɾDCOUTŋVROUT voltage level, we recommend that a by-pass capacitor (C IN1ɾCIN2ŋ CBIASɾCL1ɾCL2) be connected as close as possible to the VIN1ɾVIN2ɾVBIASɾDCOUTŋVROUT and GNDŋVSS pins. ç 3. Please mount each external component as close to the IC as possible. ç 4.ç Wire external components as close to the IC as possible and use thick, short connecting traces to reduce the circuit impedance.ç 5. V SSʢAGNDɾPGNDɾVSSʣground wiring is recommended to get large area. The IC may goes into unstable operation as a result of VSS voltage level fluctuation during the switching. 6.ç This series’ internal driver transistors br ing on heat because of the output current (I OUT) and ON resistance of driver transistors.çç L LxDCOUT EN2VROUT VIN2 EN1 VBIAS VIN1 CIN1 CIN2 CL2 CL1 L PGND AGND VSS CIN3 IC

• The Range of L Valueç fOSC VOUT L Value VOUTʽ2.5V 3.3 ЖHʙ6.8ЖHç1.2MHz 2.5VʻVOUT 4.7 ЖHʙ6.8ЖHç *When a coil less value of 4.7 μ H is used at fOSC=1.2MHz or when a coil less value of 1.5 μH is used at f OSC=3.0MHz, peak coil current more easily reach the current limit ILMI. In this case, it may happen that the IC can not provide 600mA output current. Front Back <External Components> Ceramic Capacitor Inductor

˙TEST CIRCUITS DCOUT Lx AGND PGND EN1 VIN1 VROUT EN2 VIN2 VBIAS < Circuit No.2 > 1uF A DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS AGND PGND EN2 < Circuit No.1 > ※ External Components L : 1.5μH(NR3015) 3.0MHz 4.7μH(NR4018) 1.2MHz CIN : 4.7μF(ceramic) CL :10μF(ceramic) CL L CIN A V Wave Form Measure Point < Circuit No.3 > Rpulldown 200Ω1μF DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS Wave Form Measure Point AGND PGND EN2 < Circuit No.4 > V 100mA1μF DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS AGND PGND EN2 < Circuit No.6 > V ILIM1μF DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS Wave Form Measure Point AGND PGND EN2 < Circuit No.5 > 1μF DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS A ICEH ICEL A ILeakH ILeakL AGND PGND EN2 < Circuit No.7 > Rpulldown Ilat 1uF DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS Wave Form Measure Point AGND PGND EN2 < Circuit No.8 > 1uF DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS A ILx AGND PGND EN2 < Circuit No.9 > CIN A DCOUT Lx EN1 VIN1 VROUT VIN2 VBIAS AGND PGND EN2

˙TEST CIRCUITS (Continued) <C i r c u i tN o . 1 0> DCOUT Lx AGND PGND EN1 VIN1 VROUT EN2 VIN2 VBIAS V SW2A CL2 4.7uF VSSV V A A V ASW1 CBIAS 1.0uFCIN2 1.0uF <C i r c u i tN o . 1 1> DCOUT Lx AGND PGND EN1 VIN1 VROUT EN2 VIN2 VBIAS A CL2 4.7uF VSS CBIAS 1.0uF SW1 VV SW2 V 1.0uFCIN2 SW3 SW4 RL <C i r c u i tN o . 1 2> DCOUT Lx AGND PGND EN1 VIN1 VROUT EN2 VIN2 VBIAS A CL2 4.7uF VSS CBIAS 1.0uF1.0uFCIN2 RLV V V V Waveform measure Waveform measure * For the timing chart, please refer to <Soft-start> on page 20.

˙TYPICAL PERFORMANCE CHARACTERISTICS ˔1ch:DC/DC Block (1) Efficiency vs. Output Current DCOUT=1.8V,1.2MHz ççççç DCOUT=1.8V,3.0MHz L=4.7ЖH(NR4018), CIN1=10ЖF, CL1=10ЖF çççççççççç L=1.5ЖH(NR3015), CIN1=10ЖF, CL1=10ЖF 100 0.1 1 10 100 1000 Output Current:IOUT(mA) Efficency:EFFI(%) PWM/PFM Automatic Sw itching Control PWM Control VIN= 4.2V 3.6V VI N = 4.2V 3.6V 100 0.1 1 10 100 1000 Output Current:IOUT(mA) Efficency:EFFI(%) PWM/PFM Automatic Sw itching Control PWM Control VIN= 4.2V 3.6V VIN= 4.2V 3.6V (2) Output Voltage vs. Output Current DCOUT=1.8V,1.2MHz ççççç DCOUT=1.8V,3.0MHz L=4.7ЖH(NR4018), CIN1=10ЖF, CL1=10ЖF çççççççççç L=1.5ЖH(NR3015), CIN1=10ЖF, CL1=10ЖF 1.5 1.6 1.7 1.8 1.9 2.0 2.1 0.1 1 10 100 1000 Output Current:IOUT(mA) Output Voltage:Vout(V) PWM/PFM Automatic Sw itching Control VI N＝4.2V,3.6V PWM Contr ol 1.5 1.6 1.7 1.8 1.9 2.0 2.1 0.1 1 10 100 1000 Output Current:IOUT(mA) Output Voltage:Vout(V) PWM/PFM Automatic Sw itching Control VI N＝4.2V,3.6V PWM Control (3) Ripple Voltage vs. Output Current DCOUT=1.8V,1.2MHz ççççç DCOUT=1.8V,3.0MHz L=4.7ЖH(NR4018), CIN1=10ЖF, CL1=10ЖF çççççççççç L=1.5ЖH(NR3015), CIN1=10ЖF, CL1=10ЖF 100 0.1 1 10 100 1000 Output Current:IOUT(mA) Ripple Voltage:Vr(mV) PWM Control VI N＝4.2V,3.6V PWM/PFM Automatic Sw itching Control VI N＝4.2V 3.6V 100 0.1 1 10 100 1000 Output Current:IOUT(mA) Ripple Voltage:Vr(mV) PWM/PFM Automatic Sw itching Control VI N＝4.2V 3.6V PWM Control VI N＝4.2V,3.6V

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (4) Oscillation Frequency vs. Ambient Temperature DCOUT=1.8V,1.2MHz ççççç DCOUT=1.8V,3.0MHz L=4.7ЖH(NR4018), CIN1=10ЖF, CL1=10ЖF çççççççççç L=1.5ЖH(NR3015), CIN1=10ЖF, CL1=10ЖF 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) VIN=3.6V Oscillation Frequency : FOSC(MHz) 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) VIN=3.6V Oscillation Frequency : FOSC(MHz) (5) Supply Current vs. Ambient Temperature DCOUT=1.8V,1.2MHz ççççç DCOUT=1.8V,3.0MHz -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) Supply Current : IDD (μA) VIN=6.0V VI N =4.0V - 5 0 - 2 50 2 55 07 5 1 0 0 Ambient Temperature: Ta (℃) Supply Current : IDD (μA) VIN=6.0V VIN=4.0V (6) Output Voltage vs. Ambient Temperatureççççççç (7) UVLO Voltage vs. Ambient Temperature DCOUT=1.8V,3.0MHz ççç ç DCOUT=1.8V,3.0MHz 1.5 1.6 1.7 1.8 1.9 2.0 2.1 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) Output Voltage : VOUT (V) VIN=3.6V 0.0 0.3 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) UVLO Voltage : UVLO (V) CE=V IN EN=VIN EN=VIN EN=VIN

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (8) EN "H" Voltage vs. Ambient Temperatureçççççç (9)EN" L" Voltage vs. Ambient Temperature DCOUT=1.8V,3.0MHz ççççç DCOUT=1.8V,3.0MHz 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) CE "H" Voltage : VCEH (V) VIN=5.0V VI N =3.6V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) CE "L" Voltage : VCEL (V) VIN=5.0V VIN=3.6V (10) Soft Start Time vs. Ambient Temperature DCOUT=1.8V,3.0MHz ççççç DCOUT=1.8V,3.0MHz L=4.7ЖH(NR4018), CIN1=10ЖF, CL1=10ЖF çç çççç L=1.5ЖH(NR3015), CIN1=10ЖF, CL1=10ЖF -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) Soft Start Time : TSS (ms) VI N =3.6V - 5 0 - 2 50 2 55 07 5 1 0 0 Ambient Temperature: Ta (℃) Soft Start Time : TSS (ms) VIN=3.6V (11) "Pch / Nch" Driver on Resistance vs. Input Voltage DCOUT=1.8V,3.0MHz 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0123456 Input Voltage : VIN (V) Pch on Resistance Nch on Resistance Lx SW ON Resistance:RLxH,RLxL ( Ω)

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (12) XCM519xC/ XCM519xD Rise Wave Form DCOUT=1.2V,1.2MHz çççç DCOUT=3.3V,3.0MHz (13) XCM519xC/ XCM519xD Soft-Start Time vs. Ambient Temperature DCOUT=1.2V,1.2MHz çççç DCOUT=3.3V,3.0MHz L=4.7ЖH(NR4018), CIN1=10ЖF, CL1=10ЖF ççççççç L = 1 . 5 ЖH(NR3015), CIN1=10ЖF, CL1=10ЖF (14) XCM519xC/ XCM519xD CL Discharge Resistance vs. Ambient Temperature DCOUT=3.3V,3.0MHz 100 200 300 400 500 600 -50 -25 0 25 50 75 100 Ambient Temperature: Ta (℃) VIN=6.0V VIN=4.0V 100 200 300 400 500 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Soft Start Time :TSS (μs) 100 200 300 400 500 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Soft Start Time :TSS (μs)VIN=5.0V IOUT=1.0mA VIN=5.0V IOUT=1.0mA L=4.7ЖH (NR4018), CIN1=10ЖF, CL1=10ЖF L=1.5ЖH (NR3015), CIN1=10ЖF, CL1=10ЖF 100Жs/div 100Жs/div CL Discharge Resistance: (Њ) VIN1=5.0V IOUT=1.0mA VIN1=5.0V IOUT=1.0mA VOUTɿ0.5V/div VOUTɿ1.0V/div ENɿ0.0V˰1.0V ENɿ0.0V˰1.0V

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) Load Transient Response DCOUT=1.2V,1.2MHz(PWM/PFM Automatic Switching Control) L=4.7ЖH(NR4018), CIN1=10ЖF(ceramic), CL1=10ЖF(ceramic), Topr=25ˆ VIN1=3.6V, EN1=VIN1 IOUT=1mA ˠ 100mA I OUT =1mA ˠ 300mA 1ch : I OUT 1 c h : I OUT 2 c h 2 c h V OUT : 5 0 m V / d i v V OUT : 50mV/div 50Жs/div 50 Жs/div I OUT=100mA ˠ 1mA I OUT=300mA ˠ 1mA 1ch : I OUT 1 c h : I OUT 2 c h 2 c h V OUT: 5 0 m V / d i v V OUT: 50mV/div 200Жs/div 200 Жs/div

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) Load Transient Response (Continued) DCOUT=1.2V,1.2MHz(PWM Control) L=4.7ЖH(NR4018), CIN1=10ЖF(ceramic), CL1=10ЖF(ceramic), Topr=25ˆ VIN1=3.6V, EN1=VIN1 IOUT=1mA ˠ 100mA I OUT=1mA ˠ 300mA 1ch: I OUT 1 c h : I OUT 2 c h 2 c h V OUT : 5 0 m V / d i v V OUT: 50mV/div 50Жs/div 50 Жs/div I OUT=100mA ˠ 1 m A I OUT=300mA ˠ 1mA 1ch: I OUT 1 c h : I OUT 2 c h 2 c h V OUT : 5 0 m V / d i v V OUT : 50mV/div 200Жs/div 200 Жs/div

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) Load Transient Response (Continued) DCOUTT=1.8V,3.0MHz(PWM/PFM Automatic Switching Control) L=1.5ЖH(NR3015), CIN1=10ЖF(ceramic), CL1=10ЖF(ceramic),Topr=25ˆ VIN1=3.6V, EN=VIN1 IOUT=1mA ˠ 100mA I OUT=1mA ˠ 300mA 1ch : I OUT 1 c h : I OUT 2ch çççç 2ch V OUT : 5 0 m V / d i v V OUT : 50mV/div 50Жs/div 50 Жs/div IOUT=100mA ˠ 1mA IOUT=300mA ˠ 1mA 1ch : I OUT 1 c h : I OUT 2ch çççç 2ch V OUT : 5 0 m V / d i v V OUT : 50mV/div 200Жs/div 200 Жs/div

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) Load Transient Response (Continued) DCOUT=1.8V,3.0MHz(PWM Control) L=1.5ЖH(NR3015), CIN1=10ЖF(ceramic), CL1=10ЖF(ceramic), Topr=25ˆ VIN1=3.6V, EN1=VIN1 IOUT=1mA ˠ 100mA I OUT=1mA ˠ 300mA 1ch : I OUT 1 c h : I OUT 2ch çççç 2ch V OUT : 5 0 m V / d i v V OUT : 50mV/div 50Жs/div 50 Жs/div I OUT=100mA ˠ 1 m A I OUT=300mA ˠ 1mA 1ch : I OUT 1 c h : I OUT 2 c h 2 c h V OUT : 5 0 m V / d i v V OUT : 50mV/div 200Жs/div 200 Жs/div

˔2ch:Regulator Block ˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (1) Output Voltage vs. Output Current VROUT=0.7V 0.0 0.2 0.4 0.6 0.8 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VROUT(V) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.0V VROUT=1.2V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VROUT(V) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN2=1.5V VROUT=1.8V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VROUT(V) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN2=2.1V VROUT=0.7V 0.0 0.2 0.4 0.6 0.8 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VROUT(V) VIN2=1.0V VIN2=1.2V VIN2=1.5V CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=1.2V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VROUT(V) VIN2=1.3V VIN2=1.5V VIN2=1.8V CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=1.8V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VROUT(V) VIN2=1.9V VIN2=2.1V VIN2=2.3V CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （2） Output Voltage vs. Bias Voltage VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 Bias Voltage: V BIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN2=1.0V, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN2=1.5V, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN2=2.1V, Ta=25℃ VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 2.5 3 3.5 4 4.5 5 5.5 6 Bias Voltage: V BIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VIN2=1.0V, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 2.5 3 3.5 4 4.5 5 5.5 6 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VIN2=1.5V, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 3 3.5 4 4.5 5 5.5 6 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VIN2=2.1V, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (3) Output Voltage vs. Input Voltage VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 1 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 1.6 1.7 1.8 1.9 2 Bias Voltage: V BIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 Bias Voltage: V BIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 2 2.2 2.4 2.6 2.8 3 Bias Voltage: V BIAS(V) Output Voltage: VROUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （4）Dropout Voltage vs. Output Current *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT(T). A value of the dropout voltage is determined by the value of the Vgs. çççç VROUT=1.2V (Vgs(*1)=1.8V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.0V VROUT=1.2V (Vgs(*1)=2.1V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.3V VROUT=1.2V (Vgs(*1)=2.4V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V VROUT=1.2V (Vgs(*1)=3.0V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=4.2V VROUT=1.2V (Vgs(*1)=3.8V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=5.0V VROUT=1.2V 100 150 200 250 300 0 100 200 300 400 Output Current: IOUT(mA) Dropout Voltage: Vdif(mV) VBIAS=3.0V VBIAS=3.3V VBIAS=3.6V VBIAS=4.2V VBIAS=5.0V CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (5) Supply Bias Current vs. Bias Voltage (6) Supply Input Current vs. Input Voltage VROUT=0.7V 0123456 Bias Voltage: VBIAS(V) Supply Bias Current: IBIAS(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VIN2=1.0V VROUT=1.2V 0123456 Bias Voltage: VBIAS(V) Supply Bias Current: IBIAS(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VIN2=1.5V VROUT=0.7V 0.0 0.5 1.0 1.5 2.0 00 . 511 . 522 . 53 Input Voltage: VIN(V) Supply Input Current: IIN(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V VROUT=1.2V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 00 . 511 . 522 . 53 Input Voltage: VIN(V) Supply Input Current: IIN(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V VROUT=1.8V 0123456 Bias Voltage: V BIAS(V) Supply Bias Current: IBIAS(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VIN2=2.1V VROUT=1.8V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 00 . 511 . 522 . 53 Input Voltage: VIN(V) Supply Input Current: IIN(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (7) Output Voltage vs. Ambient Temperature (8) Supply Bias Current vs. Ambient Temperature VROUT=0.7V 0.67 0.68 0.69 0.70 0.71 0.72 0.73 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Output Voltage: VROUT(V) IOUT=1mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.0V VROUT=1.2V 1.17 1.18 1.19 1.20 1.21 1.22 1.23 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Output Voltage: VROUT(V) IOUT=1mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.5V VROUT=1.8V 1.77 1.78 1.79 1.80 1.81 1.82 1.83 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Output Voltage: VROUT(V) IOUT=1mA IOUT=30mA IOUT=100mA CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=2.1V VROUT=0.7V -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Bias Current: IBIAS(μA) CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.0V VROUT=1.2V -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Bias Current: IBIAS(μA) CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.5V VROUT=1.8V -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Bias Current: IBIAS(μA) CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=2.1V

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (9) Supply Input Current vs. Ambient Temperature VROUT=0.7V 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Input Current: IIN(μA) CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.0V VROUT=1.2V 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Input Current: IIN(μA) CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.5V VROUT=1.8V 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Input Current: IIN(μA) CIN2=CBIAS=1.0μF(ceramic), CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=2.1V

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (10) Bias Transient Response VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (40usec/div) Output Voltage VROUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN 2=1.0μF(ceramic), CBIAS=0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.0V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (40usec/div) Output Voltage VROUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN 2=1.0μF(ceramic), CBIAS=0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.5V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Time (40usec/div) Output Voltage VROUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN 2=1.0μF(ceramic), CBIAS=0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=2.1V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (40usec/div) Output Voltage VROUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN 2=1.0μF(ceramic), CBIAS=0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.0V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (40usec/div) Output Voltage VROUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN 2=1.0μF(ceramic), CBIAS=0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.5V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 1.5 1.6 1.7 1.8 1.9 2.0 2.1 Time (40usec/div) Output Voltage VROUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltag e CIN 2=1.0μF(ceramic), CBIAS=0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=2.1V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Input Transient Response Time (20Жs / div) Time (20Жs / div) Time (20Жs / div) Time (20Жs / div) Time (20Жs / div) Time (20Жs / div) VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN 2(V) CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ Input Voltage Output Voltage VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN 2(V) Input Voltage Output Voltag e CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltag e Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=0.7V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN 2(V) Input Voltage Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN 2(V) Input Voltage Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN 2(V) Input Voltage Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (12) Load Transient Response Time (45Жs / div) Time (45Жs / div) Time (45Жs / div) Time (45Жs / div) VROUT=1.2V 0.4 0.6 0.8 1.0 1.2 1.4 Time (45usec/div) Output Voltage VROUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltag e 10mA 100mA CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN 2=1.5V, tr=tf=5.0μsec, Ta=25℃ VROUT=0.7V -0.1 0.1 0.3 0.5 0.7 0.9 Time (45usec/div) Output Voltage VROUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 100mA CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN 2=1.0V, tr=tf=5.0μsec, Ta=25℃ VROUT=0.7V -0.1 0.1 0.3 0.5 0.7 0.9 Time (45usec/div) Output Voltage VROUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltag e 10mA 200mA CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN 2=1.0V, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 0.4 0.6 0.8 1.0 1.2 1.4 Time (45usec/div) Output Voltage VROUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 200mA CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN 2=1.5V, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 1.0 1.2 1.4 1.6 1.8 2.0 Time (45usec/div) Output Voltage VROUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltag e 10mA 100mA CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN 2=2.1V, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 1.0 1.2 1.4 1.6 1.8 2.0 Time (45usec/div) Output Voltage VROUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 200mA CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, VIN 2=2.1V, tr=tf=5.0μsec, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13) CE Rising Response Time Time (100Жs / div) Time (100Жs / div) Time (100Жs / div) Time (100Жs / div) Time (100Жs / div) Time (100Жs / div) VROUT=0.7V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VROUT(V) EN2 Input Voltage VEN 2(V) EN2 Input Voltag e Output Voltage CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.0V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VROUT(V) EN2 Input Voltage VEN 2(V) EN2 Input Voltag e Output Voltag e CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.5V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VROUT(V) EN2 Input Voltage VCE(V) EN2 Input Voltage Output Voltag e CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=2.1V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=0.7V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VROUT(V) EN2 Input Voltage VEN 2(V) EN2 Input Voltage Output Voltage CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.0V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VROUT(V) EN2 Input Voltage VEN 2(V) EN2 Input Voltage Output Voltag e CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=1.5V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VROUT(V) EN2 Input Voltage VEN 2(V) EN2 Input Voltage Output Voltage CIN 2=CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VIN 2=2.1V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (14) VIN Rising Response Time VROUT=0.7V 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltag e Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltag e Output Voltag e CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltage Output Voltag e CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ VROUT=0.7V 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.2V 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltage Output Voltag e CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ VROUT=1.8V 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN 2=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃

˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) Bias Voltage Ripple Rejection Rate (16) Input Voltage Ripple Rejection Rate VROUT=0.7V 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VIN_PSRR(dB) CBIAS=1.0μF(ceramic), CIN2=0μF, CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.0VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃ VROUT=1.2V 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VIN_PSRR(dB) CBIAS=1.0μF(ceramic), CIN2=0μF, CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=1.5VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃ VROUT=1.8V 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VIN_PSRR(dB) CBIAS=1.0μF(ceramic), CIN2=0μF, CL2 =4.7μF(ceramic) VBIAS=3.6V, VIN2=2.1VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃ VROUT=0.7V 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VBIAS_PSRR(dB) CBIAS=0μF, CIN2=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN2=1.0V, IOUT=30mA, Ta=25℃ VROUT=1.2V 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VBIAS_PSRR(dB) CBIAS=0μF, CIN2=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN2=1.5V, IOUT=30mA, Ta=25℃ VROUT=1.8V 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VBIAS_PSRR(dB) CBIAS=0μF, CIN2=1.0μF(ceramic), CL2=4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN2=2.1V, IOUT=30mA, Ta=25℃

˔USP-12B01 ˔USP-12B01 Reference Pattern Layoutçççççççççççççç ˔USP-12B01 Reference Metal Mask Design ˙PACKAGING INFORMATION 20/1 単位 ： m m 123456 7891112 10 ■外部リー ド処理 ：Au m in0 .3u m ※端子側面はニ ッケルで 、Auめっきされてお りま せん 。 ※端子1は他端子に比べ太 くな っています 。 0. 2 5±0 .05 0. 2±0 .05 0. 2±0 .05 0. 2 ± 0. 0 5 0. 2 ± 0. 0 5 0. 2±0 .05 1234 5678 2. 8 ± 0. 0 8 0. 4 ± 0. 1 MAX0 .6 (0 .15 ) (0 .25 ) 0. 7 ± 0. 0 50. 7 ± 0. 0 5 0. 2 50. 2 5 0. 6 50. 6 5 0. 9 0 1. 3 5 0. 9 0 1. 3 5 0. 4 5 0. 4 5 1. 3 0 1. 6 0 0. 1 0 0. 1 0 1. 3 0 1. 6 0 0. 3 0 0 .0250. 0 2 5 0. 2 5 0 .025 0. 0 2 5 0. 5 5 0. 9 5 0. 2 5 0. 1 5 0. 6 5 1. 0 5 0. 2 0 0. 2 00. 5 0 0. 6 0 1. 1 0 1. 5 5 0. 6 0 1. 1 0 1. 5 5 0. 5 5 0. 9 5 1. 3 0 0. 5 5 0. 9 5 1. 3 0 0. 2 50. 2 5 0. 3 5 0. 3 5 0. 5 5 0. 9 5 0. 2 5 0. 1 5 0. 6 5 1. 0 5 0. 1 50. 1 5 0. 4 0 * Au plate thickness: Minimum 0.3 Жm *The side of pins is not plated, nickel is exposed. *Pin #1 is wider than other pins. UNIT: mm

1. The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.