XC8108_13 TOREX | Alldatasheet
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85mΩ High Function Power Switch ■GENERAL DESCRIPTION The XC8108 series is a P-channel MOSFET power switch IC with a low ON resistance. A current limit, reverse current prevention (prevents reverse current from VOUT to VIN), soft start, thermal shutdown, and an under voltage lockout (UVLO) are incorporated as protective functions. A flag function monitors the power switch status. T he flag output has N-channel open drain structure, and outputs Low level signal while over-curr ent or overheating is detected, or while the reverse current prevention is operated. A variable current limiting function is integrated, allowing th e current limit value to be set, using an external resistor. The voltage level which is fed to CE pin determines the status of XC8108. The logi c level of CE pin is selectable between either one of active high or active low. ■APPLICATIONS
- Set Top Boxes
- Digital TVs
- PCs
- USB Ports/USB Hubs
- HDMI ■FEATURES Input Voltage : 2.5V ～5.5V Output Current : 2A ON Resistance : 85m Ω@VIN=5.0V (TYP.) Supply Current : 40 μA@ VIN=5.0V Stand-by Current : 0.1 μA (TYP.) Flag Delay Time : 7.5ms (TYP .) * At over-current detection : 4ms (TYP .) * At reverse voltage detection Protection Circuit : Reverse Current Prevention 0.9A～2.4A(TYP.) Thermal Shutdown Under Voltage Lockout(UVLO ） Soft-start Functions : Flag Output CE Pin Input Logic Selectable Current Limit Response Time : 2μs (TYP .) *Reference value Operating Ambient Temperature : -40℃～+105℃ Packages : USP-6C Environmentally Friendly : EU RoHS Compliant, Pb Free ■TYPICAL APPLICATION CIRCUIT ETR33004-005a ■TYPICAL PERFORMANCE CHARACTERISTICS XC8108xC20ER 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Current : I OUT [A] Output Voltage : VOUT [V] RILIM=39.2kΩ RILIM=18.4kΩ RILIM=5.76kΩ RILIM=0kΩ CIN=1.0μF(ceramic), CL=1.0μF(ceramic)
■BLOCK DIAGRAM * Diodes inside the circuit are an ESD protection diode and a parasitic diode. XC8108 Series
■PRODUCT CLASSIFICATION
- Ordering Information XC8108①②③④⑤⑥-⑦ DESIGNATOR ITEM SYMBOL DESCRIPTION A ① CE Logic B C ② Protection Circuits Type D Refer to Selection Guide ③④ Maximum Output Current 20 2.0A (Adjustable current limit range: 900mA～2400mA) ⑤⑥-⑦ (*1) Package (Order Unit) ER -G USP-6C (3,000/Reel) (*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
- Selection Guide TYPE CE LOGIC SELECTABLE SOFT-START CURRENT LIMIT ADJUSTABLE AC Active High Yes Yes AD Active High Yes Yes BC Active Low Yes Yes BD Active Low Yes Yes TYPE UVLO FLG OUTPUT REVERSE CURRENT PREVENTION AC Yes Yes Yes AD Yes Yes Yes BC Yes Yes Yes BD Yes Yes Yes TYPE THERMAL SHUT DOWN LATCH PROTECTION AC Yes No AD Yes Yes BC Yes No BD Yes Yes
■PIN CONFIGURATION ■PIN ASSIGNMENT PIN NUMBER USP-6C PIN NAME FUNCTIONS
1 V OUT Output
2 I LIM Current Limit Adjustment
3 FLG Fault Report
4 CE ON/OFF Control
5 V SS Ground
6 V IN Power Input
TYPE PIN NAME SIGNAL STATUS H Active L Stand-by A OPEN Undefined State (*1) H Stand-by L Active B CE OPEN Undefined State (*1) * Avoid leaving the CE pin open; set to any fixed voltage. ■FUNCTION * The dissipation pad for the USP-6C packages should be solder-plated for mounting strength and heat dissipation. Please refer to the reference mount pattern and metal masking. The dissipation pad should be connected to the VSS (No. 5) pin. USP-6C (BOTTOM VIEW) VSS VIN CE ILIM FLG VOUT
■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNITS Input Voltage V IN -0.3～+6.0 V Output Voltage V OUT -0.3～+6.0 V Output Current I OUT 2.8 A CE Input Voltage V CE -0.3～+6.0 V FLG Pin Voltage V FLG -0.3～+6.0 V FLG Pin Current I FLG 15 mA ILIM Pin Voltage V ILIM -0.3～+6.0 V ILIM Pin Current I ILIM ±1 mA 120 Power Dissipation USP-6C Pd 1000 (*2) mW Operating Ambient Temperature Topr -40～+105 ℃ Storage Temperature Tstg -55～+125 ℃ * All voltages are described based on the VSS. (*1) Use with IOUT less than Pd/（VIN-VOUT）. (*2) This is a reference data taken by using the test board. Please refer to page 23 for details.
■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Input Voltage V IN - 2.5 - 5.5 V ① VIN=3.3V, IOUT=1.0A - 100 110 m Ω On Resistance R ON VIN=5.0V, IOUT=1.0A - 85 104 m Ω ① Supply Current I SS V OUT=OPEN - 40 75 μA ② Stand-by Current I STBY VIN=5.5V, VOUT=OPEN VCE=VSS (XC8108A series) VCE=VIN (XC8108B series) - 0.01 1.0 μA ② Switch Leakage Current I LEAK VIN=5.5V, VOUT=0V VCE=VSS (XC8108A series) VCE=VIN (XC8108B series) - 0.01 1.0 μA ② VOUT=VIN-0.3V ILIM shorted to VSS 2.16 2.40 2.64 Current Limit I LIMT VOUT=VIN-0.3V RILIM=18.4kΩ 1.16 1.34 1.52 A ① VOUT=0V ILIM shorted to VSS - 1.20 - Short-Circuit Current I SHORT VOUT=0V RILIM=18.4kΩ - 0.67 - A ① Current Limit Circuit Response Time (*2) tCLR VIN=5.0V, VOUT: OPEN→0V Measure from VOUT=0V to when current falls below a certain ILIMT value - 2.0 - μs ① CE "H" Level Current I CEH V IN=5.5V, VCE=5.5V -0.1 - 0.1 μA ① CE "L" Level Current I CEL V IN=5.5V, VCE=0V -0.1 - 0.1 μA ① UVLO Hysteresis V UHYS - - 0.1 - V ① NOTE: Unless otherwise stated, VIN=5.0V, IOUT=1mA, ILIM=VSS, VCE=VIN (XC8108A series) or VCE=VSS (XC8108B series) (*2) Design reference value. This parameter is provided only for reference. Ta=25℃
■ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT turn-on time t DLY(ON) R LOAD=10Ω, VCE=0V→2.2V - 0.60 1.00 ms ① turn-off time t DLY(OFF) R LOAD=10Ω, VCE=2.2V→0V - 0.08 0.13 ms ① FLG output FET On-resistance RFLG I FLG=10mA, VOUT=5.5V - 15 20 Ω ③ FLG output FET Leakage Current IFOFF V IN=5.5V, VFLG=5.5V, VOUT=OPEN - 0.01 0.1 μA ③ tFD1 over-current condition 6.5 7.5 8.5 ms ① FLG delay time tFD2 reverse-voltage condit ion 2.7 4.0 4.7 ms ① Reverse Current I REV VIN=0V, VOUT=5.5V VCE=5.0V (XC8108A series) VCE=VSS (XC8108B series) - 0.1 1.0 μA ① Reverse Current Prevention Detect Voltage VREV_D VIN: 5.0V→4.7V VOUT=5.0V - 140 - mV ① Thermal Shutdown Detect Temperature TTSD Junction Temperature - 150 - ℃ ① Thermal Shutdown Release Temperature TTSR Junction Temperature - 130 - ℃ ① Thermal Shutdown Hysteresis Width THYS Junction Temperature - 20 - ℃ ① NOTE: Unless otherwise stated, VIN=5.0V, IOUT=1mA, ILIM=VSS, VCE=VIN (XC8108A series) or VCE=VSS (XC8108B series) ■TIMING CHART
- turn-on time, turn-off time XC8108 Series, Type A XC8108 Series, Type B Ta=25℃
■TEST CIRCUITS CIN=1.0μF, CL=1.0μF 1) CIRCUIT① 2) CIRCUIT② 3) CIRCUIT③
■OPERATIONAL EXPLANATION The XC8108 series is a P-channel MOSFET power switch IC. The XC8108 series consists of a CE circuit, UVLO circuit, thermal shutdown circuit, current limiter circuit, reverse current prevention circuit, control block and others. The gate voltage of t he power switch transistor is controlled with control block . The current limiter circuit and reverse current prevention ci rcuit will operate based on the output voltage and output current. (See the BLOCK DIAGRAM below) BLOCK DIAGRAM (XC8108 Series) <CE Pin> The voltage level which is fed to CE pin cont rols the status of this IC. If either “H” level or “L” level which is defined as t he electrical specification is fed to CE pin, then XC8108 can operate in standard manner. However, if the middle voltage which is neither “H” level nor “L” level is fed to CE pin, the consumption current will increase due to the shoot-through current at internal circuits. Also if CE pin is open, the status of XC8108 cannot be fixed and the behavior will be unstable. <Thermal Shutdown> For protection against heat damage of the ICs, thermal shutdown function is built in. When the internal junction temperature reaches the temperature limit, the thermal shutdown circuit operates and the power switch transistor will turn OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the leve l of the thermal shutdown release temper ature. When the thermal shutdown circuit detects higher junction temperature than th e detect temperature, the voltage level of FLG pin is low level. When the thermal shutdown circuit detects lower junction temperature than the re lease temperature, the thermal shutdown function is released and the voltage level of FLG pin is high level. <Under Voltage Lockout (UVLO) > When the V IN pin voltage goes down to lower voltage than UVLO detected voltage, the power switch transistor turns OFF by UVLO function in order to prevent fa lse output caused by unstable operation of the internal circuitry. When the V IN pin voltage goes up to higher voltage than UVLO released voltage, the UVLO function is released and the power switch transistor can turn ON. <Soft-start Function> The soft-start circuit can reduce the in-rush current charged on the output capacitor when IC starts up. Additionally, due to the reduction of the in-rush current, the circuit can reduce the fluctuation of the input voltage as well. The soft-start time is optimized internally and defined as turn-on time. (TYP: 0.6ms)
■OPERATIONAL EXPLANATION (Continued) <Current limiter, short-circuit protection> When the output current reaches the current limit value, the constant current limit circuit activates and as a result, the output voltage goes down. If the short circuit comes at the V OUT pin, the output current is lim ited to the current which is s pecified as the short-circuit current value. If the over-current state lasts for 7.5ms (TYP.), the FLG pin changes to Low level output. Two types are available for the current limiter circuit: an auto recovery type (product type C) and a latch off type (product type D). After the current limiter circuit activates and the FLG pin ou tputs low level, the operation is different between these two types. The auto recovery type continuously limits the output current by the current limit value. When the over-current status finishes and th e status of that the output current is less than t he current limit value continues for 7.5ms (TYP.) or more, the voltage of FLG pin goes up “H” level again. The latch off type turns off the power switch transistor after the FLG pin outputs Low level. The off state is maintained regardless of whether the over-current state is released. Latch operation is released by turning off the IC with the CE pin signal and then restarting, or by lowering the input voltage below the UVLO detected voltage once and after that raising it higher than UVLO released voltage. <Current limit external adjustment function> By connecting a resistor to the current limit external adjustment pin（I LIM pin）, the current limit can be set to any value. By the following equation, the current lim it value can be set to any value within a range of 900mA to 2400mA. When the I LIM pin is open, the switch transistor is forcibly turned off. R ILIM(kΩ) = 57207 / ILIMIT(T)(mA) - 24.32(kΩ) RILIM: External resistance value ILIMIT(T): Current limit set value Table1. Current limit set value ILIMIT(T) (mA) RILIM (kΩ) E96 External resistance value (kΩ) Current limit value when use E96 external resistance (mA) 900 39.24 39.2 901 1000 32.89 33.2 995 1100 27.69 28.0 1093 1200 23.35 23.2 1204 1300 19.69 19.6 1303 1400 16.54 16.5 1401 1500 13.82 13.7 1505 1600 11.43 11.5 1597 1700 9.33 9.31 1701 1800 7.46 7.5 1798 1900 5.79 5.76 1902 2000 4.28 4.32 1997 2100 2.92 2.94 2099 2200 1.68 1.69 2199 2300 0.55 0.549 2300
2400 I LIM shorted to VSS 2400
■OPERATIONAL EXPLANATION (Continued) <Current limit external adjustment function> (Continued) Fig1. Current limit set value XC8108 電流制限設定値 － 外部抵抗値 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 0 5 10 15 20 25 30 35 40 RILIM (kΩ) ： 外部抵抗値 ILIMIT(T) (mA) ： 電流制限設定値 <Reverse current prevention> An internal circuit is built in that prevents reverse current from the V OUT pin to the VIN pin. When the difference between input voltage and V OUT pin voltage is higher than the detect voltage set internally, the reverse current prevention circuit activates, and the power switch transistor turns off, then the reverse current from the V OUT pin to the VIN pin is reduced to 0.1μA (TYP.). If the reverse-voltage state lasts for 4ms (TYP.), the FLG pin changes to Low level output. Two types are available for the reverse current prevention circ uit: the auto recovery type (product type C) and the latch off type (product type D). After the reverse current prevention circuit activates and the FLG pin outputs low level, the operation is different between these two types. On the auto recovery type, when the output voltage drops below the input voltage, the reverse current prevention circuit stops immediately, and the power switch transistor turns on again. If the output voltage remains lower than the input voltage for 4ms (TYP.), the FLG pin returns to High level output. On the latch off type, the power switch transistor remains in the off state even if the reverse voltage state is released. Latch operation is released by turning off the IC with the CE pin signal and then restarting, or by lowering the input voltage below the UVLO detected voltage once and after that raising it higher than UVLO released voltage. XC8108 Current limit set value vs. External resistor RILIM (kΩ): External resistor ILIMIT (mA): Current limit set value
■OPERATIONAL EXPLANATION (Continued) <Flag function> The flag circuit is built in which monitors the state of the power switch. The FLG pin outputs Low level when the reverse current prevention function is operating. A resistance of 10k Ω to 100kΩ is recommended for the FLG pin pull-up resistance. Auto recovery type (product type C) Protective function FLG pin Low level output Return to FLG pin High level output Current limiter 7.5ms after over-current de tection 7.5ms after over-current release Reverse current prevention 4.0ms after reverse volt age detection 4.0ms after reverse voltage release Thermal shutdown Same time as overheat state is detected Same time as overheat state is released Latch off type (product type D) Protective function FLG pin Low level output Return to FLG pin High level output Current limiter 7.5ms after over-current detection When latch operation is released Reverse current prevention 4.0ms after reverse vo ltage detection When latch operation is released Thermal shutdown Same time as overheat state is detected Same time as overheat state is released
■NOTES ON USE 1. For the phenomenon of temporal and tr ansitional voltage decrease or voltage increase, the IC may be damaged or deteriorated if IC is used beyond the absolute MAX. specifications. 2. Where wiring impedance is high, operations may become unstable due to noise depending on output current. Please keep the resistance low between VIN and VSS wiring in particular. 3. Please place the input capacitor (C IN) and the output capacitor (CL) as close to the IC as possible. For the input or output capacitor, a capacitance of 1.0μF or higher is recommended. 4. When the voltage which is higher than the maximum input voltage is fed to the VIN pin, and VOUT is shorted to the VSS level, in this case the short circuit may cause a fatal impact to operation for the IC. Please use within the operational voltage range. 5. The current limit value can be adjusted by external resistor (R LIM). The characteristic of the resistor influence the current limit value, please choose the resistor with small tolerance and temperature coefficient. 6. 80％ of current limit set value is the re commended value of maximum output current. 7. Torex places an importance on improving our products and its reliability. However, by any possibility, we would request user fail-safe design and post-aging treatment on system or equipment.
■TYPICAL PERFORMANCE CHARACTERISTICS (1) UVLO detect Voltage vs. Input Voltage (2) UVLO release Volta ge vs. Input Voltage (3) UVLO threshold Voltage vs. Ambient Temperature (4) Stand-by Current vs. Input Voltage (5) Stand-by Current vs. Ambient Temperature XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : V IN [V] UVLO release Voltage : UVLO [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] UVLO threshold Voltage : UVLO [V] UVLO detect UVLO release CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : V IN [V] Stand-by Current : Istby [μA] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] UVLO detect Voltage : UVLO [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] Stand-by Current : Istby [μA] Istby CIN=1.0μF(ceramic), CL=1.0μF(ceramic)
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (6) Supply Current vs. Input Voltage（sweep up） (7) Supply Curren t vs. Ambient Temperature (8) CE "H" Level Voltage vs. Input Voltage (9) CE "L" Level Volt age vs. Input Voltage (10) CE threshold Voltage vs. Ambient Temperature XC8108xx20ER Input Voltage : VIN [V] Supply Current : ISS [μA] Ta=105℃ Ta=25℃ Ta=-40℃ VIN=5.0V, CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] Supply Current : ISS [μA] VIN=5.0V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] CE threshold Voltage : VCE [V] CE"H"Level CE"L"Level CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : V IN [V] CE "H" Level Voltage : VCEH [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] CE "L" Level Voltage : VCEL [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic)
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) On Resistance vs. Input Voltage (12) On Resistance vs. Ambi ent Temperature (13) turn-on time vs. Input Voltage (14) turn-on time vs. Ambien t Temperature (15) turn-off time vs. Input Voltage (16) turn-off time vs. Ambi ent Temperature XC8108xx20ER 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] turn-on time : tDLY(ON) [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] turn-off time : tDLY(OFF) [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 Input Voltage : V IN [V] turn-off time : tDLY(OFF) [ms] Ta=105℃ Ta=25℃ Ta=-40℃ VIN=4.3V, CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Input Voltage : VIN [V] turn-on time : tDLY(ON) [ms] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 100 120 140 160 180 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] On Resistance : Ron [mΩ] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 100 120 140 160 180 Input Voltage : VIN [V] On Resistance : Ron [mΩ] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic)
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (17) FLG delay time over-current (18) FLG delay time reverse-vo ltage vs. Ambient Temperature vs. Ambient Temperature (19) Output Voltage vs. Output Current (20) turn-on Delay vs. Rise Time (CL=1.0μF) (21) turn-oｆｆ Delay vs. Fall Time (C L=1.0μF) XC8108xx20ER 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] FLG over-current : tFD [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [100μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=0V→5.0V, tr=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [100μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=5.0V→0V, tf=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xC20ER 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Current : IOUT [A] Output Voltage : VOUT [V] RILIM=39.2kΩ RILIM=18.4kΩ RILIM=5.76kΩ RILIM=0kΩ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xx20ER 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] FLG reverse-voltage : tFD [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8108xD20ER 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Current : IOUT [A] Output Voltage : VOUT [V] RILIM=39.2kΩ RILIM=18.4kΩ RILIM=5.76kΩ RILIM=0kΩ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) If the over-current state lasts for 7.5ms, the latch off type turns off the power switch ti t
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (22) turn-on Delay vs. Rise Time (CL=120μF) (23) turn-oｆｆ Delay vs. Fall Time (C L=120μF) (24) Short Circuit Current, Device Enabled Into Short （25） Short-Curcuit Transient Response （26） Short-Curcuit Transie nt Response (VOUT=5.0Ω→short, CL=1.0μF) (V OUT=short→5.0Ω, CL=1.0μF) XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [40μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=0V→5.0V, tr=5μs, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [40μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=5.0V→0V, tf=5μs, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] VCE=0V→5.0V, tr=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ CE Input Voltage Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=5.0V→0V, tf=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Short circuit to Vss XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Removed Short circuit
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （27） Short-Curcuit Transient Response （28） Short-Curcuit Transie nt Response (VOUT=open→short, CL=1.0μF) (V OUT=short→open, CL=1.0μF) （29） Short-Curcuit Transient Response （30） Short-Curcuit Transie nt Response (VOUT=5.0Ω→short, CL=120μF) (V OUT=short→5.0Ω, CL=120μF) （31） Short-Curcuit Transient Response （32） Short-Curcuit Transie nt Response (VOUT=open→short, CL=120μF) (V OUT=short→open, CL=120μF) XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Short circuit to Vss XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage Output Voltage Supply Current VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ VOUT = Removed Short circuit XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Short circuit to Vss XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Removed Short circuit XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Short circuit to Vss XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current VOUT = Removed Short circuit
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (33) UVLO Transient Response (CL=1.0μF) (34) UVLO Transient Response (CL=120μF) (35) Reverse Voltage Detected Voltage (CL=1.0μF) (36) Reverse Voltage Released Voltage (C L=1.0μF) XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A]Input Voltage VIN=5.0V, RL=5Ω, Ta=25℃ CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current FLG Voltage VOUT=5.5V forced XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=0V→5.0V, tr=3ms, Ta=25℃ RL=5Ω, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=5.0V→0V, tf=3ms, Ta=25℃ RL=5Ω, CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=0V→5.0V, tr=3ms, Ta=25℃ RL=5Ω, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=5.0V→0V, tf=3ms, Ta=25℃ RL=5Ω, CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A] Input Voltage VIN=5.0V, RL=5Ω, Ta=25℃ CIN=CL=1.0μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current FLG Voltage VOUT = 5.5V Removed
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (37) Reverse Voltage Detected Voltage (CL=120μF) (38) Reverse Voltage Released Voltage (C L=120μF) （39） CE Transient Response (40) Short Applied (41) Current Limit adapted time XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A]Input Voltage VIN=5.0V, Ta=25℃ CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current FLG Voltage VOUT=5.5V forced XC8108xC20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A] Input Voltage VIN=5.0V, Ta=25℃ CIN=1.0μF, CL=120μF(ceramic), RILIM=18.4kΩ Output Voltage Supply Current FLG Voltage VOUT = 5.5V Removed XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2μs/div] Voltage : [V] -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 In Rush Current : [A] In Rush Current VIN=5.0V, Ta=25℃ CL=open, RILIM=18.4kΩ Output Voltage VOUT = Short circuit to Vss XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.005 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 In Rush Current : IRUSH [A] RILIM=39.2kΩ RILIM=18.4kΩ RILIM=5.76kΩ RILIM=0kΩ CE Voltage VCE=0→5.0V, tr=5μs, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic) In Rush Current XC8108xx20ER -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 In Rush Current : IRUSH [A] RILIM=39.2kΩ RILIM=18.4kΩ RILIM=5.76kΩ RILIM=0kΩ VCE=0→5.0V, tr=5μs, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic) CE Voltage In Rush Current XC8108xx20ER Peak Limit Current [A] Current Limit Response : [μs] VIN=5.0V, Ta=25℃ CL=open, RILIM=18.4kΩ
■PACKAGING INFORMATION
- USP-6C (unit:mm)
- USP-6C Reference Pattern Layout (unit: mm) ●USP-6C Reference Metal Mask Design (unit: mm) 1.8±0.05 (0.50) (0.1) 1.4±0.05 0.20±0.05 0.30±0.05 0.10±0.05 1pin INDENT 0.05
■PACKAGING INFORMATION (Continued)
- USP-6C Power Dissipation Power dissipation data for the USP-6C is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition. 1. Measurement Condition Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-4) Thickness: 1.6mm Through-hole 4 x 0.8 Diameter 2. Power Dissipation vs. Ambient Temperature (105℃) Board Mount (Tjmax=125℃) Ambient Temperature (℃) Power Dissipation Pd (mW) Thermal Resistance (℃/W) 25 1000 105 200 100.00 Pd-Ta特性グラフ 200 400 600 800 1000 1200 25 45 65 85 105 125 周囲温度Ta（℃） 許容損失Pd（mW） Evaluation Board (Unit: mm) Pd vs. Ta Ambient Temperature: Ta (℃) Power Dissipation: Pd (mW)
■MARKING RULE ④⑤ represents production lot number 01～09, 0A～0Z, 11～9Z, A1～A9, AA～AZ, B1～ZZ in order. ( G , I , J , O , Q , W e x c l u d e d ) * No character inversion used. ① represents products series MARK PRODUCT SERIES ② represents product type MARK CE LOGIC PROTECTION CIRCUIT TYPE PRODUCT
1 Active High Auto-recovery XC8108AC****-G
2 Active High Latch-off XC8108AD****-G
3 Active Low Auto-recovery XC8108BC****-G
4 Active Low Latch-off XC8108BD****-G
③ represents maximum output current MARK CURRENT (A) PRODUCT SERIES ②③ ①1 USP-6C
- The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.