XC8107_13 TOREX | Alldatasheet

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85mΩ High Function Power Switch ■GENERAL DESCRIPTION The XC8107 series is a P-channel MOSFET power switch IC with a low ON resistance. A current limit, reverse current prevention (prevents reverse current from VOUT to VIN), soft start, thermal shutdown, and an under voltage lockout (UVLO) are incorporated as protective functions. A flag function monitors the power switch status. T he flag output has N-channel open drain configuration, and it outputs Low level signal when over-current or overheating is detected, or when the reverse current prevention is operated. The voltage level which is fed to CE pin determines the status of XC8107. The logic level of CE pin is selectable between either one of active high or active low. ■APPLICATIONS

  • Set Top Boxes
  • Digital TVs
  • PCs
  • USB Ports/USB Hubs
  • HDMI ■FEATURES Input Voltage : 2.5V～5.5V Output Current : 2A ON Resistance : 85m Ω@VIN=5.0V (TYP.) *USP-6C 100m Ω@VIN=5.0V (TYP.) *SOT-25 Supply Current : 40μA@ VIN=5.0V Stand-by Current : 0.1μA (MAX.) Flag Delay Time : 7.5ms (TYP .) * At over-current detection : 4ms(TYP.) * At reverse voltage detection Protection Circuit : Reverse Current Prevention Thermal Shutdown Under Voltage Lockout(UVLO） Soft-start Functions : Flag Output CE Pin Input Logic Selectable Current Limit Response Time : 2μs(TYP.) *Reference value Operating Ambient Temperature : -40℃～+105℃ Packages : USP-6C, SOT-25 Environmentally Friendly : EU RoHS Compliant, Pb Free ■TYPICAL APPLICATION CIRCUIT ETR33003-002 ■TYPICAL PERFORMANCE CHARACTERISTICS XC8107xCxxxR 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Current : I OUT [A] Output Voltage : VOUT [V] 0.5A type 1.0A type 1.5A type 2.0A type CIN=1.0μF(ceramic), CL=1.0μF(ceramic)

■BLOCK DIAGRAM XC8107 Series * Diodes inside the circuit are an ESD protection diode and a parasitic diode.

■PRODUCT CLASSIFICATION

  • Ordering Information XC8107①②③④⑤⑥-⑦ DESIGNATOR ITEM SYMBOL DESCRIPTION A ① CE Logic B C ② Protection Circuits Type D Refer to Selection Guide 05 0.5A 10 1.0A 15 1.5A ③④ Maximum Output Current 20 2.0A ER-G USP-6C (3,000/Reel) ⑤⑥-⑦ (*1) Packages MR-G SOT-25 (3,000/Reel)
  • Selection Guide TYPE CE LOGIC SELECTABLE SOFT-START CURRENT LIMITTER AC Active High Yes Yes AD Active High Yes Yes BC Active Low Yes Yes BD Active Low Yes Yes TYPE UVLO FLG OUTPUT REVERSE CURRENT PREVENTION AC Yes Yes Yes AD Yes Yes Yes BC Yes Yes Yes BD Yes Yes Yes TYPE THERMAL SHUT DOWN LATCH PROTECTION AC Yes No AD Yes Yes BC Yes No BD Yes Yes (*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.

■PIN CONFIGURATION ■PIN ASSIGNMENT PIN NUMBER USP-6C SOT-25 PIN NAME FUNCTIONS 1 1 V OUT Output 2 - NC No connection 3 3 FLG Fault Report 4 4 CE ON/OFF Control 5 2 V SS Ground 6 5 V IN Power Input ■FUNCTION TYPE PIN NAME SIGNAL STATUS H Active L Stand-by A OPEN Undefined State (*1) H Stand-by L Active B CE OPEN Undefined State (*1) * Avoid leaving the CE pin open; set to any fixed voltage. * The dissipation pad for the USP-6C packages should be solder-plated for mounting strength and heat dissipation. Please refer to the reference mount pattern and metal masking. The dissipation pad should be connected to the VSS (No. 5) pin.

■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNITS Input Voltage V IN -0.3～+6.0 V Output Voltage V OUT -0.3～+6.0 V Output Current I OUT 2.8 A CE Input Voltage V CE -0.3～+6.0 V FLG Pin Voltage V FLG -0.3～+6.0 V FLG Pin Current I FLG 15 mA

120 USP-6C 1000 (PCB mounted) (*2)

250 Power Dissipation

600 (PCB mounted) (*2) mW Operating Ambient Temperature Topr -40～+105 ℃ Storage Temperature Tstg -55～+125 ℃ * All voltages are described based on the VSS. (*1) Use with IOUT less than Pd/（VIN-VOUT）. (*2) This is a reference data taken by using the test board. Please refer to page 24 and 25 for details.

■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Input Voltage V IN - 2.5 - 5.5 V ① VIN=3.3V (*1) - 100 110 m Ω USP-6C VIN=5.0V (*1) - 85 104 m Ω VIN=3.3V (*1) - 115 135 m Ω On Resistance R ON SOT-25 VIN=5.0V (*1) - 100 120 m Ω Supply Current I SS V OUT=OPEN - 40 75 μA ② Stand-by Current I STBY VIN=5.5V, VOUT=OPEN VCE=VSS (XC8107A series) VCE=VIN (XC8107B series) - 0.01 1.0 μA ② Switch Leakage Current I LEAK VIN=5.5V, VOUT=0V VCE=VSS (XC8107A series) VCE=VIN (XC8107B series) - 0.01 1.0 μA ② VOUT=VIN-0.3V, XC8107xx05 series 0.81 0.90 0.99 A VOUT=VIN-0.3V, XC8107xx10 series 1.26 1.40 1.54 A VOUT=VIN-0.3V, XC8107xx15 series 1.71 1.90 2.09 A Current Limit I LIMT VOUT=VIN-0.3V, XC8107xx20 series 2.16 2.40 2.64 A VOUT=0V, XC8107xx05 series - 0.45 - A VOUT=0V, XC8107xx10 series - 0.70 - A VOUT=0V, XC8107xx15 series - 0.95 - A Short-Circuit Current I SHORT VOUT=0V, XC8107xx20 series - 1.20 - A Current Limit Circuit Response Time (*2) tCLR VIN=5.0V, VOUT: OPEN→0V Measure from VOUT=0V to when current falls below a certain ILIM value - 2.0 - μs ① CE "H" Level Current I CEH V IN=5.5V, VCE=5.5V -0.1 - 0.1 μA ① CE "L" Level Current I CEL V IN=5.5V, VCE=0V -0.1 - 0.1 μA ① UVLO Hysteresis V UHYS - - 0.1 - V ① NOTE: Unless otherwise stated, VIN=5.0V, IOUT=1mA, VCE=VIN (XC8107A series) or VCE=VSS (XC8107B series) (*1) IOUT=0.25A (XC8107xx05 series), IOUT=0.5A (XC8107xx10 series), IOUT=0.75A (XC8107xx15series), IOUT=1.0A (XC8107xx20 series) (*2) Design reference value. This parameter is provided only for reference. Ta=25℃

■ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT turn-on time t DLY(ON) R LOAD=10Ω, VCE=0V→2.2V - 0.60 1.00 ms ① turn-off time t DLY(OFF) R LOAD=10Ω, VCE=2.2V→0V - 0.08 0.13 ms ① FLG output FET On-resistance RFLG I FLG=10mA, VOUT=5.5V - 15 20 Ω ③ FLG output FET Leakage Current IFOFF V IN=5.5V, VFLG=5.5V, VOUT=OPEN - 0.01 0.1 μA ③ tFD1 over-current condition 6.5 7.5 8.5 ms ① FLG delay time tFD2 reverse-voltage condit ion 2.7 4.0 4.7 ms ① Reverse Current I REV VIN=0V, VOUT=5.5V VCE=5.0V (XC8107A series) VCE=VSS (XC8107B series) - 0.1 1.0 μA ① SOT-25 - 170 - Reverse Current Prevention Detect Voltage VREV_D VIN: 5.0V→4.7V VOUT=5.0V USP-6C - 140 - mV ① Thermal Shutdown Detect Temperature TTSD Junction Temperature - 150 - ℃ ① Thermal Shutdown Release Temperature TTSR Junction Temperature - 130 - ℃ ① Thermal Shutdown Hysteresis Width THYS Junction Temperature - 20 - ℃ ① NOTE: Unless otherwise stated, VIN=5.0V, IOUT=1mA, VCE=VIN (XC8107A series) or VCE=VSS (XC8107B series) ■TIMING CHART

  • turn-on time, turn-off time XC8107 Series, Type A XC8107 Series, Type B Ta=25℃

■TEST CIRCUITS CIN=1.0μF, CL=1.0μF 1) CIRCUIT① 2) CIRCUIT② 3) CIRCUIT③ VV VIN CE VSS VOUT CIN (ceramic) FLG V A V VIN VOUTVFLG VCE CL (ceramic)

■OPERATIONAL EXPLANATION The XC8107 series is a P-channel MOSFET power switch IC. The XC8107 series consists of a CE circuit, UVLO circuit, thermal shutdown circuit, current limiter circuit, reverse current prevention circuit, control block and others. The gate voltage of t he power switch transistor is controlled with control block . The current limiter circuit and reverse current prevention ci rcuit will operate based on the output voltage and output current. (See the BLOCK DIAGRAM below) BLOCK DIAGRAM (XC8107 Series) <CE Pin> The voltage level which is fed to CE pin cont rols the status of this IC. If either “H ” level or “L” level which is defined as the electrical specification is fed to CE pin, then XC8107 can operate in standard manner. However, if the middle voltage which is neither “H” level nor “L” level is fed to CE pin, the consumption current will increase due to the shoot-through current at internal circuits. Also if CE pin is open, the status of XC8107 cannot be fixed and the behavior will be unstable. <Thermal Shutdown> For protection against heat damage of the ICs, thermal shutdown function is built in. When the internal junction temperature reaches the temperature limit, the thermal shutdown circuit operates and the power switch transistor will turn OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the leve l of the thermal shutdown release temper ature. When the thermal shutdown circuit detects higher junction temperature than th e detect temperature, the voltage level of FLG pin is low level. When the thermal shutdown circuit detects lower junction temperature than the re lease temperature, the thermal shutdown function is released and the voltage level of FLG pin is high level. <Under Voltage Lockout (UVLO) > When the V IN pin voltage goes down to lower voltage than UVLO detected voltage, the power switch transistor turns OFF by UVLO function in order to prevent fa lse output caused by unstable operation of the internal circuitry. When the V IN pin voltage goes up to higher voltage than UVLO released voltage, the UVLO function is released and the power switch transistor can turn ON. <Soft-start Function> The soft-start circuit can reduce the in-rush current charged on the output capacitor when IC starts up. Additionally, due to the reduction of the in-rush current, the circuit can reduce the fluctuation of the input voltage as well. The soft-start time is optimized internally and defined as turn-on time. (TYP: 0.6ms)

■OPERATIONAL EXPLANATION (Continued) <Current limiter, short-circuit protection> When the output current reaches the current limit value, the constant current limiter circuit activates and as a result, the output voltage goes down. If the short circuit comes at the VOUT pin, the output current is limited to the current which is specified as the short-circuit current value. If the over-current state lasts for 7.5ms (TYP.), the FLG pin changes to Low level output. Two types are available for the current limiter circuit: an auto recovery type (product type C) and a latch off type (product type D). After the current limiter circuit activates and the FLG pin ou tputs low level, the operation is different between these two types. The auto recovery type continuously limits the output current by the current limit value. When the over-current status finishes and th e status of that the output current is less than t he current limit value continues for 7.5ms (TYP.) or more, the voltage of FLG pin goes up “H” level again. The latch off type turns off the power switch transistor afte r the FLG pin outputs Low level. The off state is maintained regardless of whether the over-current state is released. Latch operation is released by turning off the IC with the CE pin signal and then restarting, or by lowering the input voltage below the UVLO detected voltage once and after that raising it higher than UVLO released voltage. <Reverse current prevention> An internal circuit is built in that prevents reverse current from the V OUT pin to the VIN pin. When the difference between input voltage and V OUT pin voltage is higher than the detect voltage set internally, the reverse current prevention circuit activates, and the power switch transistor turns off, then the reverse current from the V OUT pin to the VIN pin is reduced to 0.1μA (TYP.). If the reverse-voltage state lasts for 4ms (TYP.), the FLG pin changes to Low level output. Two types are available for the reverse current prevention circ uit: the auto recovery type (product type C) and the latch off type (product type D). After the reverse current prevention circuit activates and the FLG pin outputs low level, the operation is different between these two types. On the auto recovery type, when the output voltage drops below the input voltage, the reverse current prevention circuit stops immediately, and the power switch transistor turns on again. If the output voltage remains lower than the input voltage for 4ms (TYP.), the FLG pin returns to High level output. On the latch off type, the power switch transistor remains in the off state even if the reverse voltage state is released. Latch operation is released by turning off the IC with the CE pin signal and then restarting, or by lowering the input voltage below the UVLO detected voltage once and after that raising it higher than UVLO released voltage.

■OPERATIONAL EXPLANATION (Continued) <Flag function> The flag circuit is built in which monitors the state of the power switch. The FLG pin outputs Low level when the reverse current prevention function is operating. A resistance of 10k Ω to 100kΩ is recommended for the FLG pin pull-up resistance. Auto recovery type (product type C) Protective function FLG pin Low level output Return to FLG pin High level output Current limiter 7.5ms after over-current de tection 7.5ms after over-current release Reverse current prevention 4.0ms after reverse volt age detection 4.0ms after reverse voltage release Thermal shutdown Same time as overheat state is detected Same time as overheat state is released Latch off type (product type D) Protective function FLG pin Low level output Return to FLG pin High level output Current limiter 7.5ms after over-current detection When latch operation is released Reverse current prevention 4.0ms after reverse vo ltage detection When latch operation is released Thermal shutdown Same time as overheat state is detected Same time as overheat state is released

■NOTES ON USE 1. For the phenomenon of temporal and tr ansitional voltage decrease or voltage increase, the IC may be damaged or deteriorated if IC is used beyond the absolute MAX. specifications. 2. Where wiring impedance is high, operations may become unstable due to noise depending on output current. Please keep the resistance low between VIN and VSS wiring in particular. 3. Please place the input capacitor (C IN) and the output capacitor (CL) as close to the IC as possible. For the input or output capacitor, a capacitance of 1.0μF or higher is recommended. 4. When the voltage which is higher than the maximum input voltage is fed to the VIN pin, and VOUT is shorted to the VSS level, in this case the short circuit may cause a fatal impact to operation for the IC. Please use within the operational voltage range. 5. Torex places an importance on improving our products and its reliability. However, by any possibility, we would request user fail- safe design and post-aging trea tment on system or equipment.

■TYPICAL PERFORMANCE CHARACTERISTICS (1) UVLO detect Voltage vs. Input Voltage (2) UVLO release Volta ge vs. Input Voltage (3) UVLO threshold Voltage vs. Ambient Temperature (4) Stand-by Current vs. Input Voltage (5) Stand-by Current vs. Ambient Temperature XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] UVLO release Voltage : UVLO [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] UVLO threshold Voltage : UVLO [V] UVLO detect UVLO release CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] Stand-by Current : Istby [μA] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] UVLO detect Voltage : UVLO [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] Stand-by Current : Istby [μA] Istby CIN=1.0μF(ceramic), CL=1.0μF(ceramic)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (6) Supply Current vs. Input Voltage（sweep up） (7) Supply Curren t vs. Ambient Temperature (8) CE "H" Level Voltage vs. Input Voltage (9) CE "L" Level Volt age vs. Input Voltage (10) CE threshold Voltage vs. Ambient Temperature XC8107xxxxxR Input Voltage : V IN [V] Supply Current : ISS [μA] Ta=105℃ Ta=25℃ Ta=-40℃ VIN=5.0V, CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] Supply Current : ISS [μA] VIN=5.0V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] CE threshold Voltage : VCE [V] CE"H"Level CE"L"Level CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] CE "H" Level Voltage : VCEH [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage : VIN [V] CE "L" Level Voltage : VCEL [V] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) On Resistance vs. Input Voltage (SOT-25) (12) On Resistance vs. Ambient Temperature (SOT-25) (13) On Resistance vs. Input Voltage (USP-6C) (14) On Resistance vs. Ambient Temperature (USP-6C) (15) turn-on time vs. Input Voltage (16) turn-on time vs. Ambien t Temperature XC8107xxxxxR 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] turn-on time : tDLY(ON) [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Input Voltage : V IN [V] turn-on time : tDLY(ON) [ms] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxMR 100 120 140 160 180 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] On Resistance : Ron [mΩ] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxMR 100 120 140 160 180 Input Voltage : V IN [V] On Resistance : Ron [mΩ] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxER 100 120 140 160 180 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] On Resistance : Ron [mΩ] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxER 100 120 140 160 180 Input Voltage : VIN [V] On Resistance : Ron [mΩ] Ta=105℃ Ta=25℃ Ta=-40℃ CIN=1.0μF(ceramic), CL=1.0μF(ceramic)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (17) turn-off time vs. Input Voltage (18) turn-off time vs. Ambi ent Temperature (19) FLG delay time over-current (20) FLG delay time reverse-vo ltage vs. Ambient Temperature vs. Ambient Temperature (21) Output Voltage vs. Output Current XC8107xxxxxR 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] turn-off time : tDLY(OFF) [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 Input Voltage : V IN [V] turn-off time : tDLY(OFF) [ms] Ta=105℃ Ta=25℃ Ta=-40℃ VIN=4.3V, CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] FLG over-current : tFD [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V VIN=5.5V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xxxxxR 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] FLG reverse-voltage : tFD [ms] VIN=2.5V VIN=3.5V VIN=4.5V VIN=5.0V CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xCxxxR 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Current : I OUT [A] Output Voltage : VOUT [V] 0.5A type 1.0A type 1.5A type 2.0A type CIN=1.0μF(ceramic), CL=1.0μF(ceramic) XC8107xDxxxR 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Current : IOUT [A] Output Voltage : VOUT [V] 0.5A type 1.0A type 1.5A type 2.0A type CIN=1.0μF(ceramic), CL=1.0μF(ceramic) If the over-current state lasts for 7.5ms, the latch off type turns off the power switch transistor.

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (22) turn-on Delay vs. Rise Time (CL=1.0μF) (23) turn-oｆｆ Delay vs. Fall Time (C L=1.0μF) (24) turn-on Delay vs. Rise Time (CL=120μF) (25) turn-oｆｆ Delay vs. Fall Time (C L=120μF) (26) Short Circuit Current, Device Enabled Into Short XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [40μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=0V→5.0V, tr=5μs, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [40μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=5.0V→0V, tf=5μs, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=0V→5.0V, tr=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=5.0V→0V, tf=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [100μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=0V→5.0V, tr=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [100μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] CE Input Voltage VCE=5.0V→0V, tf=5μs, RL=10Ω, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （27） Short-Curcuit Transient Response （28） Short-Curcuit Transie nt Response (VOUT=5.0Ω→short, CL=1.0μF) (V OUT=short→5.0Ω, CL=1.0μF) （29） Short-Curcuit Transient Response （30） Short-Curcuit Transie nt Response (VOUT=open→short, CL=1.0μF) (V OUT=short→open, CL=1.0μF) （31） Short-Curcuit Transient Response （32） Short-Curcuit Transie nt Response (VOUT=5.0Ω→short, CL=120μF) (V OUT=short→5.0Ω, CL=120μF) XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current VOUT = Short circuit to Vss XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current VOUT = Removed Short circuit XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current VOUT = Short circuit to Vss XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage Output Voltage Supply Current VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=CL=1.0μF(ceramic) VOUT = Removed Short circuit XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current VOUT = Short circuit to Vss XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current VOUT = Removed Short circuit

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （33） Short-Curcuit Transient Response （34） Short-Curcuit Transie nt Response (VOUT=open→short, CL=120μF) (V OUT=short→open, CL=120μF) (35) UVLO Transient Response (CL=1.0μF) (36) UVLO Transient Response (CL=120μF) XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]Input Voltage VIN=0V→5.0V, tr=3ms, Ta=25℃ RL=5Ω, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=5.0V→0V, tf=3ms, Ta=25℃ RL=5Ω, CIN=CL=1.0μF(ceramic) Output Voltage Supply Current XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=0V→5.0V, tr=3ms, Ta=25℃ RL=5Ω, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] Input Voltage VIN=5.0V→0V, tf=3ms, Ta=25℃ RL=5Ω, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A]FLG Voltage VIN=5.0V, tf=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current VOUT = Short circuit to Vss XC8107xC10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2ms/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Current : Isupply [A] FLG Voltage VIN=5.0V, tr=100μs, Ta=25℃ FLG=100kΩ, CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current VOUT = Removed Short circuit

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (37) Reverse Voltage Detected Voltage (CL=1.0μF) (38) Reverse Voltage Released Voltage (C L=1.0μF) (39) Reverse Voltage Detected Voltage (CL=120μF) (40) Reverse Voltage Released Voltage (C L=120μF) （41） CE Transient Response XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A]Input Voltage VIN=5.0V, RL=5Ω, Ta=25℃ CIN=CL=1.0μF(ceramic) Output Voltage Supply Current FLG Voltage VOUT=5.5V forced XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A] Input Voltage VIN=5.0V, RL=5Ω, Ta=25℃ CIN=CL=1.0μF(ceramic) Output Voltage Supply Current FLG Voltage VOUT = 5.5V Removed XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A]Input Voltage VIN=5.0V, Ta=25℃ CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current FLG Voltage VOUT=5.5V forced XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Supply Current : Isupply [A] Input Voltage VIN=5.0V, Ta=25℃ CIN=1.0μF, CL=120μF(ceramic) Output Voltage Supply Current FLG Voltage VOUT = 5.5V Removed XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.005 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 In Rush Current : IRUSH [A] 0.5A type 1.0A type 1.5A type 2.0A type CE Voltage VCE=0→5.0V, tr=5μs, Ta=25℃ VIN=5.0V, CIN=CL=1.0μF(ceramic) In Rush Current XC8107xxxxxR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [500μs/div] Voltage : [V] -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 In Rush Current : IRUSH [A] 0.5A type 1.0A type 1.5A type 2.0A type VCE=0→5.0V, tr=5μs, Ta=25℃ VIN=5.0V, CIN=1.0μF, CL=120μF(ceramic) CE Voltage In Rush Current

■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (42) Short Applied (43) Current Limit adapted time XC8107xx10xR -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 Time [2μs/div] Voltage : [V] -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 In Rush Current : [A] In Rush Current VIN=5.0V, Ta=25℃ CL=open Output Voltage VOUT = Short circuit to Vss XC8107xx10xR Peak Limit Current [A] Current Limit Response : [μs] VIN=5.0V, Ta=25℃ CL=open

■PACKAGING INFORMATION

  • USP-6C (unit:mm)
  • SOT-25 (unit:mm) 1.8±0.05 (0.50) (0.1) 1.4±0.05 0.20±0.05 0.30±0.05 0.10±0.05 1pin INDENT 0.05

■PACKAGING INFORMATION (Continued)

  • USP-6C Reference Pattern Layout (unit: mm) ●USP-6C Reference Metal Mask Design (unit: mm)

■PACKAGING INFORMATION (Continued)

  • SOT-25 Power Dissipation Power dissipation data for the SOT-25 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition. 1. Measurement Condition Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces (Board of SOT-26 is used) Material: Glass Epoxy (FR-4) Thickness: 1.6mm Through-hole 4 x 0.8 Diameter 2. Power Dissipation vs. Ambient Temperature (105℃) Board Mount (Tjmax=125℃) Ambient Temperature (℃) Power Dissipation Pd (mW) Thermal Resistance (℃/W) 25 600 105 120 166.67 Pd-Ta特性グラフ 100 200 300 400 500 600 700 25 45 65 85 105 125 周囲温度Ta（℃） 許容損失Pd（mW） Evaluation Board (Unit: mm) Pd vs. Ta Ambient Temperature: Ta (℃) Power Dissipation: Pd (mW) 40.0 2.54 1.4 28.9

■PACKAGING INFORMATION (Continued)

  • USP-6C Power Dissipation Power dissipation data for the USP-6C is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition. 1. Measurement Condition Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-4) Thickness: 1.6mm Through-hole 4 x 0.8 Diameter 2. Power Dissipation vs. Ambient Temperature (105℃) Board Mount (Tjmax=125℃) Ambient Temperature (℃) Power Dissipation Pd (mW) Thermal Resistance (℃/W) 25 1000 105 200 100.00 Pd-Ta特性グラフ 200 400 600 800 1000 1200 25 45 65 85 105 125 周囲温度Ta（℃） 許容損失Pd（mW） Evaluation Board (Unit: mm) Pd vs. Ta Ambient Temperature: Ta (℃) Power Dissipation: Pd (mW)

■MARKING RULE ④⑤ represents production lot number 01～09, 0A～0Z, 11～9Z, A1～A9, AA～AZ, B1～ZZ in order. ( G , I , J , O , Q , W e x c l u d e d ) * No character inversion used. ① represents products series MARK PRODUCT SERIES ② represents product type MARK CE LOGIC PROTECTION CIRCUIT TYPE PRODUCT SERIES

1 Active High Auto-recovery XC8107AC****-G

2 Active High Latch-off XC8107AD****-G

3 Active Low Auto-recovery XC8107BC****-G

4 Active Low Latch-off XC8107BD****-G

③ represents maximum output current MARK CURRENT (A) PRODUCT SERIES ① ② ③ ④ ⑤ 123 SOT-25 ②③ ①1 USP-6C

  1. The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.