Power Management

XC6601B071ER-G

Torex Semiconductor

Low Voltage Input LDO Voltage Regulator with Soft-Start Function

Manufacturer: Torex Semiconductor

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Low Voltage Input LDO Voltage Regulator with Soft-Start Function ■FEATURES Maximum Output Current : 400mA (Limit:550mA TYP.) Dropout Voltage Bias Voltage Range : 38mV@IOUT=100mA (TYP.) (at VBIAS - VOUT=2.4V) : 2.5V ~ 6.0V (VBIAS - VOUT≧1.2V) Input Voltage Range : 1.0V ~ 3.0V(VIN≦VBIAS) Output Voltage Range : 0.7V ~ 1.8V (0.05V increments) Output Voltage Accuracy : ±20mV Power Consumption : I BIAS=25μA , IIN=1.0μA (TYP.) I BIAS=0.01μA , IIN=0.01μA (TYP.) UVLO : V BIAS=2.0V, VIN=0.4V (TYP.) TSD (Detect/Release) : 150 ℃/125℃ (TYP.) Soft-Start Time : 240 μs @ VOUT=1.2V (TYP.) Operating Temperature Range Function Low ESR Capacitor : -40℃ ~ +85 ℃ : CL High Speed Auto-Discharge : Ceramic Capacitor Compatible Packages : USP-6C, SOT-25, SOT-89-5 Environmentally Friendly : EU RoHS Compliant, Pb Free ■APPLICATIONS

Mobile phones
Cordless phones
Wireless communication equipment
Portable games
Cameras
Audio visual equipment
Portable AV equipment
PDAs ■ TYPICAL APPLICATION CIRCUIT
VBIAS =3.6V , VIN =1.8V , VOUT =1.5V ■ TYPICAL PEFORMANCE CHARACTERISTICS
Dropout Voltage vs. Output Current ETR0335_005 ■GENERAL DESCRIPTION The XC6601 series is a low voltage input CMOS LDO regulator which provides highly accurate ( ±20mV) outputs and can supply current efficiently due to its ultra low on-resistance ev en at low output voltages. The series is ideally suited to the applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver transistor, a current limiter, a fold back circuit, a thermal shut down (TSD) circuit, an under voltage lock out (UVLO) circuit, soft-start circuit and a phase compensation circuit. Output voltage is selectable in 0.05V increments within a range of 0.7V to 1.8V using laser trimming technology and ceramic capacitors can be used for the output stabilization capacitor (C L). The over current protection circuit (the curre nt limiter and the fold back circuit) as well as the thermal shutdown circuit (th e TSD circuit) are built-in. These two protection circuits will operate when either the output cu rrent reaches the current limit level or the junction temperature reaches the temperature limit level. With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the VBIAS pin or the VIN pin falls below the UVLO voltage level. With the soft -start function, the inrush current from VIN to VOUT for charging CL at start-up can be reduced and makes the VIN stable. The CE function enables the output to be turned off and the seri es to be put in stand-by mode resulting in greatly reduced power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (CL) to be discharged via the internal auto-discharge switch which is located between the V OUT pin and the V SS pin. As a result the VOUT pin quickly returns to the VSS level. XC6601B121MR 100 150 200 250 300 0 100 200 300 400 Output Current: IOUT(mA) Dropout Voltage: Vdif(mV) VBIAS=3.0V VBIAS=3.3V VBIAS=3.6V VBIAS=4.2V VBIAS=5.0V Ta=25 [℃]

(TOP VIEW) 123

USP-6C ●SOT-25 ●SOT-89-5 PIN NUMBER USP-6C SOT-25 SOT-89-5 PIN NAME FUNCTION 1 2 2 V BIAS Power Supply Input 3 1 4 V IN Driver Transistor Input 4 5 5 V OUT Output 2 3 3 V SS Ground 6 4 1 CE ON/OFF Control MARK DESCRIPTION SYMBOL DESCRIPTION A Pull-Down Resistor Built-in ① Type of Regulators B No Pull-Down Resistor Built-in ②③ Output Voltage 07 ~ 18 e.g.) VOUT(T)=1.2V⇒②=1,③=2 1 0.1V increments e.g.) 1.2V⇒②=1,③=2,④=1 ④ Output Voltage Type B 0.05V increments MR SOT-25 MR-G SOT-25 (Halogen & Antimony free) ER USP-6C ER-G USP-6C (Halogen & Antimony free) ⑤⑥-⑦ Packages Taping Type (*2) PR SOT-89-5 ■PIN CONFIGURATION ■PIN ASSIGNMENT ■PRODUCT CLASSIFICATION
Ordering Information XC6601①②③④⑤⑥-⑦ (*1) : CE High Active, Soft-Start Function Built-in, CL Auto Discharge Function *The heat dissipation pad of the USP-6C package is recommended to solder as the recommended mount pattern and metal mask pattern for mounting strength. This pad should be electrically opened or connected to the V BIAS (No.1) pin. (*1) The ”-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. (*2) The device orientation is fixed in its embossed tape pocket. For reverse orientation, please contact your local Torex sales office or representative. (Standard orientation: ⑤R-⑦, Reverse orientation: ⑤L-⑦)

(1)XC6601A Series (2)XC6601B Series VBIAS CE Voltage Reference With Soft Start Error Amp CE each circuit ON/OFF Control VIN VSS VOUT Current Limit Thermal Protection Under Voltage Lock Out CE/ Rdischg CE/ R pull-down VBIAS CE Voltage Reference With Soft Start Error Amp CE each circuit ON/OFF Control VIN VSS VOUT Current Limit Thermal Protection Under Voltage Lock Out CE/ Rdischg CE/ ■BLOCK DIAGRAMS (1) XC6601A Series (2) XC6601B Series *Diodes inside the circuit are an ESD protection diode and a parasitic diode.

PARAMETER SYMBOL RATINGS UNITS Bias Voltage V BIAS V SS-0.3 ~ +7.0 V Input Voltage V IN V SS-0.3 ~ +7.0 V Output Current I OUT 700 (*1) mA VSS-0.3 ~ VBIAS+0.3 Output Voltage V OUT VSS-0.3 ~ VIN+0.3 V CE Input Voltage V CE V SS-0.3 ~ +7.0 V

100 USP-6C 1000 (PCB mounted) *2

250 SOT-25 600 (PCB mounted) *2

1300 (PCB mounted) *2 mW Operating Temperature Range Topr -40 ~ +85 ℃ Storage Temperature Range Tstg -55 ~ +125 ℃ (*1) IOUT=Less than Pd / (VIN-VOUT) (*2) The power dissipation figure shown is PCB mounted. Please refer to pages 29 ～31 for details. ■MAXIMUM ABSOLUTE RATINGS Ta=25 ℃

PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT Bias Voltage (*1) V BIAS VCE =VBIAS,VIN =VOUT(T)+0.3V 2.5 - 6.0 V ① Input Voltage (*2) V IN VBIAS=VCE=3.6V 1.0 - 3.0 V ① -0.02 V OUT(T) (*4) +0.02 Output Voltage V OUT(E) (*3) VBIAS=VCE=3.6V, VIN =VOUT(T)+0.3V, IOUT=100mA E-0 (*5) V ① Maximum Output Current 1 IOUTMAX 1 VCE =VBIAS ,VBIAS -VOUT(T)≧1.2V VIN =VOUT(T)+0.5V 200 - - mA ① Maximum Output Current 2 IOUTMAX 2 VCE =VBIAS ,VBIAS -VOUT(T)≧1.3V VIN =VOUT(T)+0.5V 300 - - mA ① Maximum Output Current 3 IOUTMAX 3 VCE =VBIAS ,VBIAS -VOUT(T)≧1.5V VIN =VOUT(T)+0.5V 400 - - mA ① Load Regulation △VOUT VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, 1mA≦IOUT≦300mA - 8 17 mV ① Dropout Voltage 1 Vdif1 (*7) VBIAS=VCE, IOUT=100mA E-1 (*6) mV ① Dropout Voltage 2 Vdif2 (*7) VCE =VBIAS , IOUT=200mA E-2 (*6) mV ① Dropout Voltage 3 Vdif3 (*7) VCE =VBIAS , IOUT=300mA E-3 (*6) mV ① Dropout Voltage 4 Vdif4 (*7) VCE =VBIAS , IOUT=400mA E-4 (*6) mV ① Supply Current 1 I BIAS VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V VOUT=OPEN 8 25 45 μA ① Supply Current 2 I IN VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V VOUT=OPEN 0.1 1.0 3.0 μA ① VOUT(T)≧1.0V VBIAS=VCE =3.6V, VIN=VOUT(T) VOUT= VOUT(T) - 0.05V Bias Current (*10) I BIASMAX VOUT(T)＜1.0V VBIAS=VCE =3.6V, VIN=1.0V VOUT= VOUT(T) - 0.05V - 1.0 2.5 mA ① Stand-by Current 1 I BIAS_STB VBIAS=6.0V, VIN=3.0V, VCE=VSS - 0.01 0.10 μA ① Stand-by Current 2 I IN_STB VBIAS=6.0V, VIN=3.0V, VCE=VSS - 0.01 0.35 μA ① VOUT(T)≧1.3V VOUT(T)+1.2V≦VBIAS≦6.0V, VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mABias Regulation △VOUT/ (△VBIAS・VOUT) VOUT(T)＜1.3V 2.5V≦VBIAS≦6.0V, VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA - 0.01 0.3 %/V ① VOUT(T)≧0.90V, VOUT(T)+0.1V≦VIN≦3.0V, VBIAS=VCE=3.6V, IOUT=1mA Input Regulation △VOUT/ (△VIN・VOUT) V OUT(T)＜0.90V, 1.0V≦VIN≦3.0V VBIAS=VCE=3.6V, IOUT=1mA - 0.01 0.1 %/V ① Bias Voltage UVLO V BIAS_UVLO VCE =VBIAS, VIN =VOUT(T)+0.3V, IOUT=1mA 1.37 2.0 2.5 V ① Input Voltage UVLO V IN_UVLO V BIAS=VCE=3.6V, IOUT=1mA 0.07 0.4 0.6 V ① VBIAS Ripple Rejection V BIAS_PSRR VBIAS= VCE =3.6VDC+0.2Vp-pAC, VIN=VOUT(T)+0.3V, IOUT=30mA,f=1kHz - 40 - dB ② VIN Ripple Rejection V IN_PSRR VIN=VOUT(T)+0.3VDC+0.2Vp-pAC, VBIAS=3.6V, IOUT=30mA, f=1kHz - 60 - dB ② ■ELECTRICAL CHARACTERISTICS Ta=25 ℃

OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) NOMINAL OUTPUT VOLTAGE (V) VOUT NOMINAL OUTPUT VOLTAGE (V) VOUT VOUT(T) MIN. MAX. VOUT(T) MIN. MAX. 1.25 1.230 1.270 PARAMETER SYNBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT Output Voltage Temperature Characteristics △VOUT/ △Topr・VOUT VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V , IOUT=30mA, - 40℃≦ Topr ≦85℃ - ±100 - ppm/℃ ① Limit Current I LIM VOUT=VOUT(E)×0.95, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V 400 550 - mA ① Short Current I SHORT VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, VOUT=0V - 80 - mA ① Thermal Shutdown Detect Temperature TTSD Junction Temperature - 150 - ℃ ① Thermal Shutdown Release Temperature TTSR Junction Temperature - 125 - ℃ ① Hysteresis Width T TSD－TTSR - 25 - ℃ ① CL Auto-Discharge Resistance Rdischg VBIAS=3.6V, VIN= VOUT(T)+0.3V, VCE= VSS, VOUT=VOUT(T) 290 430 610 Ω ① CE "H" Level Voltage V CEH VBIAS=3.6V, VIN= VOUT(T)+0.3V 0.75 - 6.0 V ① CE "L" Level Voltage V CEL VBIAS=3.6V, VIN= VOUT(T)+0.3V - - 0.16 V ① CE "H" Level Current (A Series) 2.4 - 8.0 CE "H" Level Current (B Series) ICEH VBIAS=VCE=6.0V, VIN=VOUT(T)+0.3V -0.1 - 0.1 μA ① CE "L" Level Current I CEL VBIAS=6.0V, VCE=VSS VIN=VOUT(T)+0.3V -0.1 - 0.1 μA ① Soft-Start Time (*11) t SS VBIAS=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA VCE=0V→3.6V 100 - 410 μs ③ ■OUTPUT VOLTAGE CHART NOTE: * 1: Please use Bias voltage VBIAS within the range VBIAS –VOUT(E) (*3) ≧1.2V * 2: Please use Input voltage VIN within the range VIN≦VBIAS * 3: VOUT(E) = Effective output voltage (Refer to the voltage chart E-0 and E-1) * 4: VOUT (T) = Specified output voltage * 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART * 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART * 7: Vdif = {VIN1 (*8) -VOUT1 (*9) * 8: VIN1 = The input voltage when VOUT1 appears as input voltage is gradually decreased. * 9: VOUT1 = A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when VIN=VBIAS at VBIAS<3.0V, and VIN=3.0V at VBIAS≧3.0V is input to the VIN pin. * 10: IBIASMAX = A supply current at the VBIAS pin providing for the output current (IOUT). * 11: tSS is defined as a time VOUT reaches VOUT(E)x0.9V from the time when CE H threshold 0.75V is input to the CE pin. ■ELECTRICAL CHARACTERISTICS (Continued) Ta=25 ℃

DROPOUT VOLTAGE 1 (mV) Vdif 1 NOMINAL OUTPUT VOLTAGE (V) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) VOUT(T) Vgs(*1) (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. ■DROPOUT VOLTAGE CHART *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).

DROPOUT VOLTAGE 2 (mV) Vdif 2 NOMINAL OUTPUT VOLTAGE (V) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) VOUT (T) Vgs(*1) (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. 0.80 2.20 200 2.50 200 2.80 200 3.40 200 4.20 200 0.90 2.10 131 2.40 117 2.70 110 3.30 100 4.10 100 1.00 2.00 90 139 2.30 81 123 2.60 74 111 3.20 64 98 4.00 58 88 1.10 1.90 96 146 2.20 85 127 2.50 76 114 3.10 65 101 3.90 59 90 1.20 1.80 101 154 2.10 88 131 2.40 78 117 3.00 67 103 3.80 59 91 1.30 1.70 108 170 2.00 90 139 2.30 81 123 2.90 68 106 3.70 60 92 1.40 1.60 115 179 1.90 96 146 2.20 85 127 2.80 70 108 3.60 61 93 1.50 1.50 122 192 1.80 101 154 2.10 88 131 2.70 72 110 3.50 62 94 1.60 1.40 135 206 1.70 108 170 2.00 90 139 2.60 74 111 3.40 63 95 1.70 1.30 154 248 1.60 115 179 1.90 96 146 2.50 76 114 3.30 63 97 1.80 1.20 175 353 1.50 122 192 1.80 101 154 2.40 78 117 3.20 64 98 *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). ■DROPOUT VOLTAGE CHART (Continued)

DROPOUT VOLTAGE 3 (mV) Vdif 3 NOMINAL OUTPUT VOLTAGE (V) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) VOUT (T) Vgs(*1) (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. 0.80 2.20 134 200 2.50 117 200 2.80 109 200 3.40 200 4.20 200 0.90 2.10 138 204 2.40 119 181 2.70 111 167 3.30 148 4.10 132 1.00 2.00 145 216 2.30 130 190 2.60 115 170 3.20 98 151 4.00 91 134 1.10 1.90 153 227 2.20 134 197 2.50 117 176 3.10 101 153 3.90 92 137 1.20 1.80 161 239 2.10 138 204 2.40 119 181 3.00 105 155 3.80 93 139 1.30 1.70 173 264 2.00 145 216 2.30 130 190 2.90 107 159 3.70 93 140 1.40 1.60 184 289 1.90 153 227 2.20 134 197 2.80 109 163 3.60 94 141 1.50 1.50 196 313 1.80 161 239 2.10 138 204 2.70 111 167 3.50 95 142 1.60 1.40 222 344 1.70 173 264 2.00 145 216 2.60 115 170 3.40 96 145 1.70 1.30 256 442 1.60 184 289 1.90 153 227 2.50 117 176 3.30 97 148 1.80 1.20 - - 1.50 196 313 1.80 161 239 2.40 119 181 3.20 98 151 *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). ■DROPOUT VOLTAGE CHART (Continued)

DROPOUT VOLTAGE 4 (mV) Vdif 4 NOMINAL OUTPUT VOLTAGE (V) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) VOUT (T) Vgs(*1) (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. Vgs (V) TYP . MAX. 0.80 2.20 195 277 2.50 164 272 2.80 150 250 3.40 131 246 4.20 118 231 0.90 2.10 201 277 2.40 170 272 2.70 153 250 3.30 134 246 4.10 119 231 1.00 2.00 206 277 2.30 189 272 2.60 157 250 3.20 136 246 4.00 121 231 1.10 1.90 218 277 2.20 195 272 2.50 164 250 3.10 139 246 3.90 125 231 1.20 1.80 231 334 2.10 201 277 2.40 170 248 3.00 142 215 3.80 128 189 1.30 1.70 248 376 2.00 206 296 2.30 189 255 2.90 146 219 3.70 128 191 1.40 1.60 264 418 1.90 218 315 2.20 195 266 2.80 150 224 3.60 129 193 1.50 1.50 281 460 1.80 231 334 2.10 201 277 2.70 153 228 3.50 129 195 1.60 1.40 - - 1.70 248 376 2.00 206 296 2.60 157 234 3.40 131 198 1.70 1.30 - - 1.60 264 418 1.90 218 315 2.50 164 241 3.30 134 202 1.80 1.20 - - 1.50 281 460 1.80 231 334 2.40 170 248 3.20 136 205 *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). ■DROPOUT VOLTAGE CHART (Continued)

<Voltage Regulator> The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel MOSFET which is connected to the V OUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is controlled & stabilized by a system of negative feedback. VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase, the VBIAS pin supplies output current also. VIN pin is connected to a driver transistor and provides output current. In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=VBIAS – VOUT(T)) of the driver transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of thermal shutdown circuit, the driver transistor circuit is forced OFF when VBIAS or VIN voltage goes lower than UVLO voltage. Further, the IC's internal circuitry can be shutdown via the CE pin's signal. Figure1: XC6601A series <Low ESR Capacitor> With the XC6601 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an bias capacitor (CBIAS ) of 1.0μF between the V BIAS pin and the VSS pin. Also, please connect an input capacitor (CIN) of 1.0μF between the VIN pin and the VSS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or temperature too much. The table below shows recommended values of CBIAS, CIN, CL. Recommended Values of CBIAS, CIN, CL BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR SETTING VOLTAGE CBIAS CIN CL ■OPERATIONAL EXPLANATION

Time (μs) Inrush Current IRUSH (mA) CE Input Voltage VCE(V) CIN=CBIAS=1.0μF (ceramic) VIN=1.5V ,VBIAS=3.6V ,IOUT=1mA ,tr=5.0μs ,Ta=25℃ CE Input Voltage CL=4.7μF (ceramic) CL=10μF (ceramic) Inrush Current <Soft-Start Function> With the XC6601, the inrush current from VIN to VOUT for charging CL at start-up can be reduced and makes the VIN stable. The soft-start time is optimized to 240μA (TYP.) at VOUT=1.2V internally. Soft-start time is defined as the VOUT reaches 90% of VOUT(E) from the time when CE H threshold 0.75V is input to the CE pin. CL High Speed Auto-Discharge> XC6601 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction. At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R] and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel transistor is calculated by the following formulas. V = VOUT x e –t/τ, or ｔ=τln（ V OUT(E) / V ） V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time, τ: CL auto-discharge resistance R×Output capacitor (CL) value C <Current Limit, Short-Circuit Protection> The XC6601 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is shorted to the VSS level, current flows about 80mA. <Thermal Shutdown Circuit (TSD) > When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature (125℃ TYP.). ■OPERATIONAL EXPLANATION (Continued) Figure2: Example of the inrush current wave form at IC start-up. Figure3: Timing chart at IC start-up

<Under Voltage Lock Out (UVLO) > When the VBIAS pin voltage drops below 2.0V (TYP.) or VIN pin voltage drops below 0.4V (TYP.), the output driver transistor is forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin turned in the ON state and start to operate voltage regulation. <CE Pin> The IC internal circuitry can be shutdown via the signal from the CE pin with the XC6601 series. In shutdown mode, output at the VOUT pin will be pulled down to the VSS level via R1 & R2. However, as for the XC6601 series, the CL auto-discharge resistor is connected in parallel to R1 and R2 while the power supply is applied to the VIN pin. Therefore, time until the VOUT pin reaches the VSS level becomes short. The CE pin of XC6601A has pull-down circuitry so that CE input current increase during IC operation. The CE pin of XC6601B does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the CE pin voltage is taken from VBIAS pin or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current in the IC's internal circuitry when medium voltage is input. 1. Please use this IC within the stated absolute maximum rati ngs. The IC is liable to malfunction should the ratings be exceeded. 2. Where wiring impedance is high, operations may become un stable due to noise and/or phase lag depending on output current. Please keep the resistance low between VBIAS and VSS wiring or VIN and VSS wiring in particular. 3. Please wire the bias capacitor (C BIAS), input capacitor (CIN) and the output capacitor (CL) as close to the IC as possible. 4. Capacitance values of these capacitors (C BIAS, CIN, CL) are decreased by the influences of bias voltage and ambient temperature. Care shall be taken for capacitor selection to ensure stability of phase compens ation from the point of ESR influence. 5. In case of the output capacitor more than C L=22μF is used, ringing of input current occurs when rising time. 6. V IN and CE should be applied at least 10μs after the bias voltage VBIAS reaches the requested voltage. If VIN and CE are applied within 10μs, inrush current like 1A may occurs. ■NOTE ON USE ■OPERATIONAL EXPLANATION (Continued)

Circuit ① Circuit ② Circuit ③ ■TEST CIRCUITS * For the timing chart, please refer to page 12 <Soft-Start Function>.

■TYPICAL PERFORMANCE CHARACTERISTICS （1） Output Voltage vs. Output Current XC6601B071MR 0.0 0.2 0.4 0.6 0.8 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VOUT(V) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V XC6601B121MR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VOUT(V) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V XC6601B181MR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VOUT(V) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V XC6601B071MR 0.0 0.2 0.4 0.6 0.8 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VOUT(V) VIN=1.0V VIN=1.2V VIN=1.5V CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601B121MR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VOUT(V) VIN=1.3V VIN=1.5V VIN=1.8V CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601B181MR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 700 Output Current: I OUT(mA) Output Voltage: VOUT(V) VIN=1.9V VIN=2.1V VIN=2.3V CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （2） Output Voltage vs. Bias Voltage XC6601x071 0.5 0.6 0.7 0.8 0.9 Bias Voltage: V BIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V, Ta=25℃ XC6601x071 0.5 0.6 0.7 0.8 0.9 2.5 3 3.5 4 4.5 5 5.5 6 Bias Voltage: V BIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 2.5 3 3.5 4 4.5 5 5.5 6 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 3 3.5 4 4.5 5 5.5 6 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V, Ta=25℃

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (3) Output Voltage vs. Input Voltage XC6601x071 0.5 0.6 0.7 0.8 0.9 Bias Voltage: V BIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 1 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 1.6 1.7 1.8 1.9 2 Bias Voltage: V BIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601x071 0.5 0.6 0.7 0.8 0.9 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 2 2.2 2.4 2.6 2.8 3 Bias Voltage: V BIAS(V) Output Voltage: VOUT(V) IOUT=0mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, Ta=25℃

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) （4）Dropout Voltage vs. Output Current *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). A value of the dropout voltage is determined by the value of the Vgs. XC6601B121MR (Vgs (*1)=1.8V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.0V XC6601B121MR (Vgs (*1)=2.1V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.3V XC6601B121MR (Vgs (*1)=2.4V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V XC6601B121MR (Vgs (*1)=3.0V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=4.2V XC6601B121MR (Vgs (*1)=3.8V) 100 200 300 400 0 100 200 300 400 Output Current: I OUT(mA) Dropout Voltage: Vdif(mV) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=5.0V XC6601B121MR 100 150 200 250 300 0 100 200 300 400 Output Current: IOUT(mA) Dropout Voltage: Vdif(mV) VBIAS=3.0V VBIAS=3.3V VBIAS=3.6V VBIAS=4.2V VBIAS=5.0V CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) Ta=25℃

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (5) Supply Bias Current vs. Bias Voltage (6) Supply Input Current vs. Input Voltage XC6601x071 0123456 Bias Voltage: V BIAS(V) Supply Bias Current: IBIAS(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V XC6601x121 0123456 Bias Voltage: V BIAS(V) Supply Bias Current: IBIAS(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V XC6601x071 0.0 0.5 1.0 1.5 2.0 0 0.5 1 1.5 2 2.5 3 Input Voltage: V IN(V) Supply Input Current: IIN(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V XC6601x121 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 Input Voltage: VIN(V) Supply Input Current: IIN(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V XC6601x181 0123456 Bias Voltage: VBIAS(V) Supply Bias Current: IBIAS(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V XC6601x181 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1 1.5 2 2.5 3 Input Voltage: VIN(V) Supply Input Current: IIN(μA) Ta=-40℃ Ta=25℃ Ta=85℃ CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (7) Output Voltage vs. Ambient Temperature (8) Supply Bias Current vs. Ambient Temperature XC6601x071 0.67 0.68 0.69 0.70 0.71 0.72 0.73 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Output Voltage: VOUT(V) IOUT=1mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V XC6601x121 1.17 1.18 1.19 1.20 1.21 1.22 1.23 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Output Voltage: VOUT(V) IOUT=1mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V XC6601x181 1.77 1.78 1.79 1.80 1.81 1.82 1.83 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Output Voltage: VOUT(V) IOUT=1mA IOUT=30mA IOUT=100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V XC6601x071 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Bias Current: IBIAS(μA) CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V XC6601x121 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Bias Current: IBIAS(μA) CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V XC6601x181 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Bias Current: IBIAS(μA) CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (9) Supply Input Current vs. Ambient Temperature XC6601x071 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Input Current: IIN(μA) CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V XC6601x121 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Input Current: IIN(μA) CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V XC6601x181 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃) Supply Input Current: IIN(μA) CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (10) Bias Transient Response XC6601x071 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (40usec/div) Output Voltage VOUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (40usec/div) Output Voltage VOUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Time (40usec/div) Output Voltage VOUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x071 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (40usec/div) Output Voltage VOUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (40usec/div) Output Voltage VOUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltag e CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 1.5 1.6 1.7 1.8 1.9 2.0 2.1 Time (40usec/div) Output Voltage VOUT(V) Bias Voltage VBIAS(V) Bias Voltage Output Voltage CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ Time (40μs / div) Time (40μs / div) Time (40μs / div) Time (40μs / div) Time (40μs / div) Time (40μs / div)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Input Transient Response XC6601x071 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (20usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ Input Voltag e Output Voltage XC6601x121 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (20usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Time (20usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x071 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Time (20usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Time (20usec/div) Output Voltage VROUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 1.6 1.7 1.8 1.9 2.0 2.1 2.2 Time (20usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ Time (20μs / div) Time (20μs / div) Time (20μs / div) Time (20μs / div) Time (20μs / div) Time (20μs / div)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (12) Load Transient Response XC6601B121MR 0.4 0.6 0.8 1.0 1.2 1.4 Time (45usec/div) Output Voltage VOUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V, tr=tf=5.0μsec, Ta=25℃ XC6601B071MR -0.1 0.1 0.3 0.5 0.7 0.9 Time (45usec/div) Output Voltage VOUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V, tr=tf=5.0μsec, Ta=25℃ XC6601B071MR -0.1 0.1 0.3 0.5 0.7 0.9 Time (45usec/div) Output Voltage VOUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 200mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V, tr=tf=5.0μsec, Ta=25℃ XC6601B121MR 0.4 0.6 0.8 1.0 1.2 1.4 Time (45usec/div) Output Voltage VOUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 200mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V, tr=tf=5.0μsec, Ta=25℃ XC6601B181MR 1.0 1.2 1.4 1.6 1.8 2.0 Time (45usec/div) Output Voltage VOUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 100mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V, tr=tf=5.0μsec, Ta=25℃ XC6601B181MR 1.0 1.2 1.4 1.6 1.8 2.0 Time (45usec/div) Output Voltage VOUT(V) 100 200 300 400 500 Output Current IOUT(mA) Output Current Output Voltage 10mA 200mA CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V, tr=tf=5.0μsec, Ta=25℃ Time (45μs / div) Time (45μs / div) Time (45μs / div) Time (45μs / div) Time (45μs / div) Time (45μs / div)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13) CE Rising Response Time XC6601x071 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VOUT(V) CE Input Voltage VCE(V) CE Input Voltage Output Voltage CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VOUT(V) CE Input Voltage VCE(V) CE Input Voltage Output Voltage CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VOUT(V) CE Input Voltage VCE(V) CE Input Voltage Output Voltage CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x071 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VOUT(V) CE Input Voltage VCE(V) CE Input Voltage Output Voltage CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.0V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VOUT(V) CE Input Voltage VCE(V) CE Input Voltage Output Voltage CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=1.5V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Time (100usec/div) Output Voltage VOUT(V) CE Input Voltage VCE(V) CE Input Voltage Output Voltage CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VIN=2.1V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ Time (100μs / div) Time (100μs / div) Time (100μs / div) Time (100μs / div) Time (100μs / div) Time (100μs / div)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (14) VIN Rising Response Time XC6601x071 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃ XC6601x071 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x121 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ XC6601x181 0.0 0.5 1.0 1.5 2.0 2.5 Time (100usec/div) Output Voltage VOUT(V) Input Voltage VIN(V) Input Voltage Output Voltage CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃ Time (100μs / div) Time (100μs / div) Time (100μs / div) Time (100μs / div) Time (100μs / div) Time (100μs / div)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) Bias Voltage Ripple Rejection Rate (16) Input Voltage Ripple Rejection Rate XC6601x071 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VBIAS_PSRR(dB) CBIAS=0μF, CIN=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.0V, IOUT=30mA, Ta=25℃ XC6601x121 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VBIAS_PSRR(dB) CBIAS=0μF, CIN=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.5V, IOUT=30mA, Ta=25℃ XC6601x181 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VBIAS_PSRR(dB) CBIAS=0μF, CIN=1.0μF(ceramic), CL=4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN=2.1V, IOUT=30mA, Ta=25℃ XC6601x071 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VIN_PSRR(dB) CBIAS=1.0μF(ceramic), CIN=0μF, CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.0VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃ XC6601x121 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VIN_PSRR(dB) CBIAS=1.0μF(ceramic), CIN=0μF, CL=4.7μF(ceramic) VBIAS=3.6V, VIN=1.5VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃ XC6601x181 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) VIN_PSRR(dB) CBIAS=1.0μF(ceramic), CIN=0μF, CL=4.7μF(ceramic) VBIAS=3.6V, VIN=2.1VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃

USP-6C
SOT-25 ● SOT-89-5 (UNIT : mm) 2.4 0.45 0.45 1.0 0.050.05 2.3 0.35 0.35 0.15 0.15 0.8 ・はんだ厚:120μm (参考) （）< USP-6C 推奨マウントパッド寸法参照 > （）< USP-6C 推奨メタルマスクデザイン参照 > (UNIT : mm) (UNIT : mm)

1.3 MAX

2.8±0.2 +0.2 -0.1 1.1±0.1 1.6

0.2 MIN

■PACKAGING INFORMATION

USP-6C Reference Metal Mask Design
USP-6C Reference Pattern Layout Thickness of solder paste: 120μm (reference) *The side of pins are not gilded, but nickel is used: Sn 5 ～15μm

USP-6C Power Dissipation Board Mount (Tj max = 125 ℃) Ambient Temperature（℃） Power Dissipation Pd（mW） Thermal Resistance (℃/W) 25 1000 85 400 100.00 て Pd-Ta特性グラフ 200 400 600 800 1000 1200 25 45 65 85 105 125 周辺温度Ta（℃）許容損失Pd（mW） ■PACKAGING INFORMATION (Continued) Power dissipation data for the USP-6C is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 1. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-4) Thickness: 1.6 mm Through-hole: 4 x 0.8 Diameter Evaluation Board (Unit: mm) 2. Power Dissipation vs. Operating temperature Pd vs. Ta Ambient Temperature Ta (℃) Power Dissipation Pd (mW)

SOT-25 Power Dissipation Board Mount (Tj max = 125 ℃) Ambient Temperature（℃） Power Dissipation Pd（mW） Thermal Resistance (℃/W) 25 600 85 240 166.67 評価基板レイアウト（単位：mm） Pd-Ta特性グラフ 100 200 300 400 500 600 700 25 45 65 85 105 125 周辺温度Ta（℃）許容損失Pd（mW） ■PACKAGING INFORMATION (Continued) Power dissipation data for the SOT-25 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 2. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces (Board of SOT-26 is used.) Material: Glass Epoxy (FR-4) Thickness: 1.6 mm Through-hole: 4 x 0.8 Diameter Evaluation Board (Unit: mm) 2. Power Dissipation vs. Operating temperature Pd vs. Ta Ambient Temperature Ta (℃) Power Dissipation Pd (mW)

SOT-89-5 Power Dissipation Board Mount (Tj max = 125 ℃) Ambient Temperature（℃） Power Dissipation Pd（mW） Thermal Resistance (℃/W) 25 1300 85 520 76.92 て Pd-Ta特性グラフ 200 400 600 800 1000 1200 1400 25 45 65 85 105 125 周辺温度Ta（℃）許容損失Pd（mW） Power dissipation data for the SOT-89-5 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 3. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-4) Thickness: 1.6 mm Through-hole: 5 x 0.8 Diameter Evaluation Board (Unit: mm) 2. Power Dissipation vs. Operating temperature Pd vs. Ta Ambient Temperature Ta (℃) Power Dissipation Pd (mW) ■PACKAGING INFORMATION (Continued)

VOLTAGE (V) MARK OUTPUT VOLTAGE (V) 0 0.7 F 1.45 1 0.75 H 1.5 2 0.8 K 1.55 3 0.85 L 1.6 4 0.9 M 1.65 5 0.95 N 1.7 6 1.0 P 1.75 7 1.05 R 1.8 8 1.1 S - 9 1.15 T - A 1.2 U - B 1.25 V - C 1.3 X - D 1.35 Y - E 1.4 Z - ■MARKING RULE

SOT25, 89-5, USP6C SOT25 123 ① ② ③ ④ ⑤ SOT89-5 5 2 4 1 2 3 ②③ ① USP6C ① represents product series ② represents type of regulators ③ represents output voltage ④,⑤ represents production lot number *No character inversion used.

The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.

Product Information

XC6601B071ER-G specifications and overview.

Summary

Low Voltage Input LDO Voltage Regulator with Soft-Start Function

Description

Low Voltage Input LDO Voltage Regulator with Soft-Start Function

Source title XC6601B071ER-G Datasheet(PDF) - Torex Semiconductor

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