XC2406

XC2406_12 TOREX | Alldatasheet

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1.6GHz ON/OFF Function LNA TOP VIEW * RBIAS should be used in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability. VDD [V] (TYP .) RBIAS [Ω] 3.45 390 3.00 300 2.85 270 1.80 92 CE RF_OUT VDD VSS2 VSS1 RBIAS CBIAS POUT PIN VCE RF_IN RBIAS1 RBIAS2 VDD 7.5nH 6.2nH 3.9pF 10nH ˙GENERAL DESCRIPTION The XC2406A816UR-G is an ultra-low-noise amplifier (LNA) wi th low operating voltage, low noise figure (NF), low power consumption using CMOS process, The XC2406 is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is greatly reduced and there is no need to add external ON/OFF control function like LDO. External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are ˙APPLICATIONS ˔GPS band RF signal amplified ˙TYPICAL APPLICATION CIRCUIT ETR2704-002a ˙FEATURES Noise Figure ɿNF=0.96dB(TYP.) (@ 1.575GHz) Low Power Consumption ɿ11.88mW (TYP.) (VDD=1.80V, RBIAS=92Ω) High Gain ç ɿS21=18dB(TYP.) (@ 1.575GHz) CE Function ɿCE “H” Voltage 1.1VʙVDD (1.71V≦VDD≦3.15V) CE “L” Voltage 0V ʙ0.4V Operation Voltage Range ɿ1.71Vʙ3.63V Output ɿCMOS Output, 50Ω Driver Built-in Operating Temperature Range ɿ- 40ˆʙ+ 85ˆ Package ɿUSP-8A01 Environmentally Friendly ɿEU RoHS Compliant, Pb Free ˙TYPICAL PERFORMANCE CHARACTERISTICS XC2406A816 Frequency : f (GHz) Power Gain : S21 (dB) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Noise Figure : NF (dB) VDD=VCE=2.85V, Ta=25℃ Power Gain / Noise Figure vs. Frequency

˙BLOCK DIAGRAM * Diodes inside the circuit are an ESD protection diode. ■PRODUCT CLASSIFICATION ˔Ordering Information PRODUCT NAME PACKAGE ORDER UNIT XC2406A816UR-G (*1) USP-8A01 3,000 / Reel (*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.

■PIN CONFIGURATION ■PIN ASSIGNMENT ■FUNCTION CHART PIN NAME SIGNAL STATUS CE Low Stand-by CE High Active CE CE OPEN Undefined State PIN NUMBER PIN NAME FUNCTION

1 RF_IN RF Signal Input

2 V SS1 Ground

3 V SS2 Ground

4 CE ON/OFF Control Pin

5 RF_OUT RF Signal Output

6 V DD Power Supply

7 R BIAS1 R BIAS Connect Pin

8 R BIAS2 R BIAS Connect Pin

(BOTTOM VIEW)

■ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNITS Power Supply Voltage V DD -0.3～4.0 V CE Input Voltage V CE -0.3～VDD+0.3 or 4.0 (*1) V Current Circuit IDD 42 mA RBIAS1 Input Voltage RBIAS1 -0.3～VDD+0.3 or 4.0 (*1) V RBIAS2 Input Voltage RBIAS2 -0.3～+1.6 V RF Input Power PIN 10 dBm RF_IN Input Voltege VRF_IN -0.3～RBIAS2+0.3 or +1.6 (*2) V RF_OUT Input Voltege VRF_OUT -0.3～RBIAS2+0.3 or +1.6 (*2) V Power Dissipation Pd 120 mW Operating Ambient Temperature Topr -40～+85 ℃ Storage Temperature Tstg -55～+125 ℃ * All voltages are described based on the VSS1 and VSS2 pin. VSS1 pin and VSS2 pin should be connected each other outside. (*1) The maximum value should be either VDD+0.3V or +4.0V in the lowest. (*2) The maximum value should be either RBIAS2+0.3V or +1.6V in the lowest. Ta=25ˆ

■ELECTRICAL CHARACTERISTICS ˔DC Characteristics Ta=25ˆ (*1) For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below. (*2) RBIAS should be used in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability.

• AC Characteristics VDD=VCE=2.85V, RBIAS=270Ω, Ta=25ˆ (*1) NF is the value excluding the substrate loss. Power Supply Voltage vs. RBIAS VDD [V] RBIAS [Ω] 3.278～3.630 390 2.850～3.150 300 2.708～2.992 270 1.710～1.890 92 PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT RBIAS=390Ω (*2) 3.278 3.450 3.630 V ① RBIAS=300Ω (*2) 2.850 3.000 3.150 V ① RBIAS=270Ω (*2) 2.708 2.850 2.992 V ① Power Supply Voltage VDD RBIAS=92Ω (*2) 1.710 1.800 1.890 V ① Current Circuit IDD 1.71V≦VDD≦3.63V (*1) VCE=VDD - 6.6 8.9 mA ① Stand-by Current ISTBY 1.71V≦VDD≦3.63V (*1) VCE=0V - - 0.1 μA ① 1.71V≦VDD≦3.15V 1.1 - V DD V ① CE "H" Level Voltage VCEH 3.15V<VDD≦3.63V 1.3 - V DD V ① CE "L" Level Voltage VCEL - 0 - 0.4 V ① PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT Power Gain S21 f=1.575 GHz 15.0 18.0 - dB ᶄ Input Return Loss S11 f=1.575GHz - 7.5 - dB ᶄ Output Return Loss S22 f=1.575GHz - 13 - dB ᶄ Isolation S12 f=1.575GHz - -33 - dB ᶄ Noise Figure (*1) NF f=1.575GHz - 0.96 - dB ᶅ Input Power IP3 IIP3 f=1.575GHz, 1.576GHz - -20 - dBm ᶆ Input Power IP2 IIP2 f=0.8GHz, 2.375GHz - 12.2 - dBm ᶆ Input Power @ 1dB Gain Conpression P1dB f=1.575GHz - -28.0 - dBm ᶄ

■NOTE ON USE 1. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be ex ceeded. 2. Please eliminate static electricity from the operational table, people, and soldering iron. 3. Please use noiseless power supply for stable operation. 4. Please connect C BIAS to RBIAS2 pin as close as possible. 5. VSS1 pin and VSS2 pin should be connected each other outside. 6. Please ensure to use an external component which does not depend on bias or temperature too much. 7. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their syst ems.

■TEST CIRCUITS ˔Circuit ᶃ (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Stand-by current) ˔Circuit ᶄ (Power Gain, Input Return Loss, Output Return Lo ss, Isolation, Input Power @ 1dB Gain Compression) ˔Circuit ᶅ (Noise Figure) ç V CE RF_OUT VDD VSS2 VSS1 RBIAS CBIAS POUT PIN A RF_IN RBIAS1 RBIAS2 VDD VCE * PIN / POUT is 50Ω (*1) Refer to the circuit ᶇ for the block detail. ç (*1) Refer to the circuit ᶇ for the block detail. ç

■TEST CIRCUITS (Continued) ˔Circuit ᶆ (Input Power IP3, Input Power IP2) ˔Circuit ᶇ (XC2406 series, the circuit of the block) * R BIAS should be used in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability. VDD [V] (TYP .) RBIAS [Ω] 3.45 420 3.00 390 2.85 360 1.80 120 CE RF_OUT VDD VSS2 VSS1 RBIAS CBIAS POUT PIN VCE RF_IN RBIAS1 RBIAS2 VDD 7.5nH 6.2nH 3.9pF 10nH (*1) Refer to the circuit ᶇ for the block detail. ç

■TEST CIRCUITS (Continued) Evaluation Board PCB (FR-4) MICROSTRIPLINE WIDTH=0.6mm t=0.18mm PCB size=18mm × 20mm * Please use an external component which does not depend on bias or temperature too much. External Components SYMBOL SPEC COMMENT C1 10nF - C2 3.9pF - L1 6.2nH MURATA (LQW15A6N2G00D) L2 10nH MURATA (LQW15A10NG00D) L3 7.5nH MURATA (LQW15A7N5G00D) RBIAS - Less than ±1% tolerance, Less than ±200ppm / ℃ temperature stability VDD VCE VSS 18mm 20mm PIN POUT RBIAS

■TYPICAL PERFORMANCE CHARACTERISTICS XC2406A816 0.4 0.5 0.6 0.7 0.8 0.9 1.1 Power Supply Voltage : VDD (V) CE "H" Level Voltage : VCEH (V) Ta=25℃ (1) 回路電流 - 電源端子電圧特性例 (2) CE"H"レベル電圧 - 電源端子電圧特性例 XC2406A816 5.5 6.5 7.5 Power Supply Voltage : VDD (V) Current Circuits : IDD (mA) VDD=VCE, Ta=25℃ (3) CE"L"レベル電圧 - 電源端子電圧特性例 (4) 挿入電力利得 - 電源端子電圧特性例 (5) 入力側リターンロス - 電源端子電圧特性例 (6) 出力側リターンロス - 電源端子電圧特性例 XC2406A816 0.4 0.5 0.6 0.7 0.8 0.9 1.1 Power Supply Voltage : VDD (V) CE "L" Level Voltage : VCEL (V) Ta=25℃ XC2406A816 -8.5 -7.5 -6.5 Power Supply Voltage : VDD (V) Input Return Loss : S11 (dB) VDD=VCE, Ta=25℃, f=1.575GHz XC2406A816 -14 -13.5 -13 -12.5 -12 Power Supply Voltage : VDD (V) Output Return Loss : S22 (dB) VDD=VCE, Ta=25℃, f=1.575GHz XC2406A816 17.5 18.5 Power Supply Voltage : VDD (V) Power Gain : S21 (dB) VDD=VCE, Ta=25℃, f=1.575GHz (1) Current Circuits vs. Supply Voltage (2) CE “H” Level Voltage vs. Supply Voltage (3) CE “L” Level Voltage vs. Power Supply Voltage (5) Input Return Loss vs. Power Supply Voltage (6) Output Return Loss vs. Supply Voltage (4) Power Gain vs. Power Supply Voltage

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (7) アイソレーション - 電源端子電圧特性例 (8) 雑音指数 - 電源端子電圧特性例 (9) 入力IP3 - 電源端子電圧特性例 (10) 入力IP2 - 電源端子電圧特性例 (11) 1dB利得圧縮時入力電力 - 電源端子電圧特性例 (12) 挿入電力利得 - 周囲温度特性例 XC2406A816 0.4 0.6 0.8 1.2 1.4 1.6 Power Supply Voltage : V DD (V) Noise Figure : NF (dB) VDD=VCE、Ta=25℃, f=1.575GHz XC2406A816 -23 -22 -21 -20 -19 -18 -17 Power Supply Voltage : V DD (V) Input Power IP3 : IIP3 (dBm) VDD=VCE, Ta=25℃, f=1.575GHz, 1.576GHz XC2406A816 Power Supply Voltage : VDD (V) Input Power IP2 : IIP2 (dBm) VDD=VCE, Ta=25℃, f=0.8GHz, 2.375GHz XC2406A816 -30 -29.5 -29 -28.5 -28 -27.5 -27 Power Supply Voltage : VDD (V) Input Power @ 1dB Gain Compression : P1dB (dBm) VDD=VCE、Ta=25℃, f=1.575GHz XC2406A816 -35 -34 -33 -32 -31 -30 Power Supply Voltage : V DD (V) Isolation : S12 (dB) VDD=VCE、Ta=25℃, f=1.575GHz XC2406A816 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Power Gain : S21 (dB) VDD=VCE=2.85V,f=1.575GHz (7) Isolation vs. Power Supply Voltage (8) Noise Figure vs. Power Supply Voltage (9) Input Power IP3 vs. Power Supply Voltage (10) Input Power IP2 vs. Power Supply Voltage (11) Input Power @ 1dB Gain Compression vs. Power Supply Voltage (12) Power Gain vs. Ambient Temperature

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13) 入力側リターンロス - 周囲温度特性例 (14) 出力側リターンロス - 周囲温度特性例 (15) アイソレーション - 周囲温度特性例 (16) 雑音指数 - 周囲温度特性例 (17) 入力IP3 - 周囲温度特性例 (18) 入力IP2 - 周囲温度特性例 XC2406A816 -10 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Input Return Loss : S11 (dB) VDD=VCE=2.85V,f=1.575GHz XC2406A816 -16 -15 -14 -13 -12 -11 -10 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Output Return Loss : S22 (dB) VDD=VCE=2.85V,f=1.575GHz XC2406A816 -34 -33.5 -33 -32.5 -32 -31.5 -31 -30.5 -30 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Isolation : S12 (dB) VDD=VCE=2.85V,f=1.575GHz XC2406A816 0.5 1.5 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Noise Figure : NF (dB) VDD=VCE=2.85V,f=1.575GHz XC2406A816 -23 -22 -21 -20 -19 -18 -17 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Input Power IP3 : IIP3 (dBm) VDD=VCE=2.85V, f=1.575GHz, 1.576GHz XC2406A816 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Input Power IP2 : IIP2 (dBm) VDD=VCE=2.85V, f=0.8GHz, 2.375GHz (13) Input Return Loss vs. Ambient Temperature (14) Output Return Loss vs. Ambient Temperature (15) Isolation vs. Ambient Temperature (16) Noise Figure vs. Ambient Temperature (17) Input Power IP3 vs. Ambient Temperature (18) Input Power IP2 vs. Ambient Temperature

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (19) 1dB利得圧縮時入力電力 - 周囲温度特性例 (20) 挿入電力利得 - 周波数特性例 (21) 入力側リターンロス - 周波数特性例 (22) 出力側リターンロス - 周波数特性例 (23) アイソレーション - 周波数特性例 (24) 挿入電力利得－入力電力特性例 XC2406A816 -18 -16 -14 -12 -10 1 1.2 1.4 1.6 1.8 2 Frequency : f (GHz) Input Return Loss : S11 (dB) 85℃ 25℃ -40℃ VDD=VCE=2.85V XC2406A816 -18 -16 -14 -12 -10 1 1.2 1.4 1.6 1.8 2 Frequency : f (GHz) Output Return Loss : S22 (dB) 85℃25℃-40℃ VDD=VCE=2.85V XC2406A816 Input Power : P IN (dBm) Power Gain : S21 (dB) 85℃ 25℃ -40℃ VDD=VCE=2.85V XC2406A816 -100 -80 -60 -40 -20 1 1.2 1.4 1.6 1.8 2 Frequency : f (GHz) Isolation : S12 (dB) 25℃ -40℃ 85℃ VDD=VCE=2.85V XC2406A816 -30 -29.5 -29 -28.5 -28 -27.5 -27 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Input Power @ 1dB Gain Compression : P1dB (dBm) VDD=VCE=2.85V,f=1.575GH z XC2406A816 1 1.2 1.4 1.6 1.8 2 Frequency : f (GHz) Power Gain : S21 (dB) 85℃ 25℃ -40℃ VDD=VCE=2.85V,f=1.575GHz (19) Input Power @ 1dB Gain Compression vs. Ambient Temperature (20) Power Gain vs. Frequency (21) Input Return Loss vs. Frequency (22) Output Return Loss vs. Frequency (23) Isolation vs. Frequency (24) Power Gain vs. Input Power

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) XC2406A816 -80 -70 -60 -50 -40 -30 -20 -10 -60 -50 -40 -30 -20 -10 0 Input Power : PIN (dBm) Output Power : POUT (dBm) Inter-Modulation distortion: IM3 (dBm) VDD=VCE=2.85V, Ta=25℃, f=1.575GHz, 1.576GHz Desire Undesire IM3 (25) 出力電力/IM3 － 入力電力特性例 (26)入力側リターンロス －周波数特性例 (スミス図) (27) 出力リターンロス －周波数特性例 (スミス図) f=1.575GHz VDD=VCE=2.85V, Ta=25℃ f=1GHz～2GHz XC2406A816 f=1.575GHz VDD=VCE=2.85V, Ta=25℃ f=1GHz～2GHz XC2406A816 (25) Output Power / IM3 vs. Input Power (26) Input Return Loss vs. Frequency (Smith Chart) (27) Output Return Loss vs. Frequency (Smith Chart)

■PACKAGING INFORMATION ˔USP-8A01 (unit:mm) 1.5±0.05 0.1±0.05 0.1±0.05 1PIN INDENT

■PACKAGING INFORMATION (Continued) ˔USP-8A01çReference Pattern Layout (unit:mm) ˔USP-8A01çReference Metal Mask Design (unit:mm) 0.25 0.25 0.35 ※0.45※0.35※0.35 0.5 0.5 0.250.250.25 ※0.35※0.35※0.35 0.75 ※0.85 ※0.85 0.75 1.9 ※2.0 Is cupper area. Mark ˞ is opening of resist.

■MARKING RULE MARK PRODUCT SERIES MARK PRODUCT SERIES MARK PRODUCT SERIES ① represents product series. USP-8A01 ①②③ ③ represents product.çç ᶆ,ᶇ represents production lot number. 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ and B1 to ZZ in order. (G, I, J, O, Q, W excepted) *No character inversion used. ② represents product.çç

1. The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.