XC2401A8167R-G

XC2401A8167R-G TOREX | Alldatasheet

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1.6 GHz Low Noise Amplifier

• RBIAS should be in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability. VIN [V] Rbias [Ω] 3.00 560 2.85 470 1.80 160 ˙GENERAL DESCRIPTION The XC2401A8167R-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low nose figure (NF), low power consumption using CMOS process. The device offers easy output matching to 50Њ for input and output with less external components. An internal self bias function eliminates external bias setting. The device operates at 1.2V. For higher power supplies such as 1.8V and 2.85V, the device can operate with a self bias of one adding resister. ˙APPLICATIONS ˔GPS RF module ˙FEATURES Noise Figure ɿNF=0.69dB(TYP.) (@ 1.575GHz)ççç Low Power Consumption ɿ6.6mW (TYP.) @ VDD=1.2V, Fixed Bias High Gain ɿS21 =15dB(TYP.) (@ 1.575GHz) Operation Voltage Range ɿ1.14Vʙ1.26V @ Fixed Bias Output ɿCMOS Output, 50Њ driver built-in Operating Temperature Range ɿ-40ˆʙ+85ˆ Ultra Small Package ɿUSPN-4B02 Environmentally Friendly ɿEU RoHS Compliant, Pb Free ˙TYPICAL APPLICATION CIRCUIT ETR2701-004 Figure 2: Self Bias Figure 1: Fixed Bias ˙çTYPICAL PERFORMANCE CHARACTERISTICS XC2401A816 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 Frequency [GHz] S21 [dB] 0.4 0.8 1.2 1.6 2.4 2.8 NF [dB] VDD=1.2V Ta=25℃

USPN-4B02 PIN NAME FUNCTION

1 V DD Power Supply RF

2 RF_OUT RF Signal Output

3 V SS Ground

4 RF_IN RF Signal Input

PRODUCT NAME PACKAGE ORDER UNIT XC2401A8167R-G ï*1ð USPN-4B02 5,000/Reel ˙PIN CONFIGURATION ˙PIN ASSIGNMENT USPN-4B02 ʢBOTTOM VIEWʣ ˙PRODUCT CLASSIFICATION ˔Ordering Information (*1) The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

PARAMETER SYMBOL RATINGS UNITS Supply Voltage V DD VSS - 0.3 ʙ 1.60 V Supply Circuit I DD 30 mA RF Input Power P IN 10 dBm RF_IN Input Voltage RF_IN VSS - 0.3 ʙ V DD + 0.3 V RF_OUT Input Voltage RF_OUT VSS - 0.3 ʙ V DD + 0.3 V Power Dissipation Pd 100 mW Operating Temperature Range Topr -40ʙ+85 oC Storage Temperature Range Tstg -55ʙ+125 oC ˙BLOCK DIAGRAM ˙ABSOLUTE MAXIMUM RATINGS Ta=25ˆ

˔DC Characteristics Fixed Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 1) PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT Power Supply Pin Voltage V DD - 1.14 1.20 1.26 V ᶃ Current Circuit I DD V DD=1.2V 5.5 10.5 mA ᶃ PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT Input Power Supply Voltage 1 VIN1 Rbias=560Њʶ1ˋ ʶ200ppm/ˆ 2.850 3.000 3.150 V ᶃ Input Power Supply Voltage 2 VIN2 Rbias=470Њʶ1ˋ, ʶ200ppm/ˆ 2.708 2.850 2.992 V ᶃ Input Power Supply Voltage 3 VIN3 Rbias=160Њʶ1ˋ, ʶ200ppm/ˆ 1.710 1.800 1.890 V ᶃ Power Supply Pin Voltage V DD V IN = VIN1, VIN2, VIN3 0.90 1.12 1.32 V ᶃ Current Circuit I DD V IN = VIN1, VIN2, VIN3 - 4.25 5.50 mA ᶃ ˙ELECTRICAL CHARACTERISTICS Ta=25ˆ * When the device is used in self bias, please use the specified RBIAS and CBIAS. Self Bias (refer to TYPICAL APPLICATION CIRCUIT,F igure 2)

*1: NF is the value excluding the PCB loss. PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS CIRCUIT Power Gain S21 f=1.575 GHz 11.5 15.0 - dB ᶄ Input Return Loss S11 f=1.575GHz - 6 - dB ᶄ Output Return Loss S22 f=1.575GHz - 6 - dB ᶄ Isolation S12 f=1.575GHz - -20 - dB ᶄ Noise Figure (*1) NF f=1.575GHz - 0.69 - dB ᶅ Input Power IP3 I IP3 f=1.575GHz, 1.576GHz Pin = -30dBm - -1.0 - dBm ᶆ Input Power @ 1dB Gain Compression P1dB f=1.575GHz - -12 - dBm ᶄ ˙ELECTRICAL CHARACTERISTICS (Continued) ˔AC Characteristics V DD=1.2V Ta=25 ˆ Note ç 1. In case symptoms of transient voltage drop and rise temporarily, please use this IC within the stated maximum ratings. The IC is liable to malfunction should the ratings be exceeded. 2. Please eliminate static electricity from the operational table, people, and soldering iron. 3. Please use noiseless power supply for stable operation. 4. Please use ʶ1% Rbias with ±200ppm/℃ temperature stability and 10nF Cbias. 5. Please connect Cbias to V DD pin as close as possible. 6. Please ensure to use an external component wh ich does not depend on bias or temperature too much. 7. We will improve the product quality and improve reliability, however please make sure to design fail safe or pre-aging tre atment on the system.

çç ç ˙TEST CIRCUITS ˔Circuit ᶃ (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Input Power Supply Voltage) ˔Circuit ᶄ (Power Gain, Input Return Loss, Output Return Lo ss, Isolation, Input Power @ 1dB Gain Compression) *ç Fixed Bias: Rbias=0Ω, VIN=VDD ** Pin / Pout is 50 Ω *1: Refer to the circuit ᶇ for the block detail. ç ˔Circuit ᶅ (Noise Figure) *1: Refer to the circuit ᶇ for the block detail. ç

RF_OUTRF_IN VIN Cbias=10nF VIN(V) Rbias(Њ) 3.00 560 2.85 470 1.80 160 ˙TEST CIRCUITS (Continued) ˔Circuit ᶆ (Input Power IIP3) *1: Refer to the circuit ᶇ for the block detail.ç ˔Circuit ᶇ (XC2401 series, the circuit of the block) * Fixed Bias: Rbias=0 Ω, VIN=VDD ** çRbias: Should be in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability.

(GRM1552C1H) C2 10nF - L1 9.1nH TDK (GLQ1005type) L2 6.2nH TDK ( GLQ1005type) (Rbias) (*1) (*1) Less than ʶ1% tolerance, Less than ʶ200ppm/ˆ temperature stability ˙EVALUATION BOARD PCB(FR-4) MICROSTRIPLINE WIDTH = 0.6mm t = 0.018mm PCB size = 20mmʷ18mm *1: Fixed Bias: Rbias=0Њ * Please use an external component which does not depend on bias or temperature too much.

0.0 2.0 4.0 6.0 8.0 10.0 12.0 Supply Voltage: V DD(V) Supply Current: IDD (mA) Ta=25℃ XC2401A816 13.5 14.0 14.5 15.0 15.5 16.0 16.5 Supply Voltage: V DD(V) Power Gian ： S21(dB) Ta=25℃、Pin=-35dBm XC2401A816 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 Supply Voltage: V DD(V) Intput Return Loss ： S11 (dB) Ta=25℃、Pin=-35dBm XC2401A816 -8.0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 Supply Voltage: V DD(V) Outtput Return Loss ：S22 (dB) Ta=25℃、Pin=-35dBm XC2401A816 -24.0 -23.5 -23.0 -22.5 -22.0 -21.5 -21.0 Supply Voltage: V DD(V) Reverse Isolation ：S12 (dB) Ta=25℃、Pin=-35dBm XC2401A816 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Supply Voltage: V DD(V) Noise Figure: NF (dB) Ta=25℃、f=1.575GHz ˙TYPICAL PERFORMANCE CHARACTERISTICS (1) Supply Circuit vs. Supply Voltage (2) Power Gain vs. Supply Voltage (3) Input Return Loss vs. Supply Voltage (4) Output Return Loss vs. Supply Voltage (5) Reverse Isolation vs. Supply Voltage (6) Noise Figure vs. Supply Voltage

-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Input 3Order Intercept Point: IIP3(dBm) VDD=1.2V,Pin=-30dBm f =1.575＆1.576GHz XC2401A816 -13.5 -13.0 -12.5 -12.0 -11.5 -11.0 -10.5 Supply Voltage: V DD(V) Input Power @1dB Gian Compression: P1dB (dBm) Ta=25℃、f=1.575GHz XC2401A816 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Supply Current: IDD (mA) VDD =1.2V XC2401A816 13.5 14.0 14.5 15.0 15.5 16.0 16.5 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Power Gian ： S21(dB) VDD = 1.2V Pin=-35dBm XC2401A816 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Intput Return Loss ： S11 (dB) VDD= 1.2V Pin=-35dBm XC2401A816 -8.0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Outtput Return Loss ：S22 (dB) VDD = 1.2V Pin=-35dBm ˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (7) Input 3 Order Intercept Point vs. Supply Voltage (8) Input Power @ 1dB Gain compression vs. Power Supply Voltage (11) Input Return Loss vs. Ambient Temperature (12) Output Return Loss vs. Ambient Temperature (9) Supply Current vs. Ambient Temperature (10) Power Gain vs. Ambient Temperature

-24.0 -23.5 -23.0 -22.5 -22.0 -21.5 -21.0 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Reverse Isolation: S12 (dB) VDD = 1.2V Pin=-35dBm XC2401A816 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Noise Figure: NF (dB) VDD=1.2V 、f =1.575GHz XC2401A816 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 Supply Voltage: V DD(V) Input 3Order Intercept Point: IIP3(dBm) Ta=25℃,Pin=-30dBm f =1.575＆1.576GHz XC2401A816 -13.5 -13.0 -12.5 -12.0 -11.5 -11.0 -10.5 -50 -25 0 25 50 75 100 Ambient Temperature:Ta( ℃) Input Power @1dB Gian Compression: P1dB (dBm) VDD= 1.2V Pin=-35dBm XC2401A816 Frequency ：f[GH z] Power Gian ： S21(dB) VDD = 1.20V Pin=-35dBm -40℃ 85℃ 25℃ XC2401A816 -7.5 -6.5 -5.5 -4.5 -3.5 -2.5 -1.5 Frequency ：f[GH z] Intput Return Loss ： S11 (dB) VDD = 1.20V Pin=-35dBm -40℃ 85℃ 25℃ ˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13) Reverse Isolation vs. Ambient Temperature (14) Noise Figure vs. Ambient Temperature (15) Input 3 Order intercept point vs. Ambient Temperature (16) Input Power @ 1dB Gain Compression vs. Ambient Temperature (17) Power Gain vs. Frequency (18) Input Return Loss vs. Frequency

-10 Frequency ：f[GH z] Outtput Return Loss ：S22 (dB) VDD = 1.20V Pin=-35dBm -40℃ 85℃ 25℃ XC2401A816 -26 -25 -24 -23 -22 -21 -20 Frequency ：f[GH z] Reverse Isolation ：S12 (dB) VDD = 1.20V Pin=-35dBm -40℃ 85℃ 25℃ XC2401A816 Frequency ：f[GH z] Noise Figure: NF (dB) VDD = 1.20V Pin=-35dBm -40℃ 85℃25℃ XC2401A816 Input Pow er:Pin(dBm) Power Gian :P(dB) VDD = 1.20V , f=1.575GHz -40℃ 85℃25℃ XC2401A816 -100 -80 -60 -40 -20 -50 -40 -30 -20 -10 0 10 Input Pow er: Pin(dBm) Output Power:Pout(dBm) 100 120 Inter-Modulation distortion: IM3(dB) VDD =1.2V、Ta=25℃ Undesire Desire IM3 ˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (19) Output Return Loss vs. Frequency (20) Isolation vs. Frequency (21) Noise Figure vs. Frequency (22) Power Gain vs. Input Power (23) Output Power / IM3 vs. Input Power

(24) Input Return Loss vs. Frequency (Smith Chart) (25) Output Return Loss vs. Frequency (Smith Chart) ˙TYPICAL PERFORMANCE CHARACTERISTICS (Continued) XC2401A816 XC2401A816 VDD=1.2V, Pin=-35dBm VDD=1.2V, Pin=-35dBm 1.575GHz 1.575GHz

0.95±0.05 0.38 0.2±0.05 0.325±0.05 -0.03 +0.02 ˙çPACKAGING INFORMATION ˔USPN-4B02

0.50.2 0.350.35 MARK PRODUCT SERIES MARK ᶄ PRODUCT SERIES A XC2401A816**-G ˔USPN-4B02 Reference Pattern Layout çç ˔USPN-4B02 Reference Metal Mask Design ˙çPACKAGING INFORMATION (Continued) ˙MARKING RULE USPN-4B02 ① ② 1 2 ᶃ represents product series. ᶄ represents product. çç ᶅ represents production lot number. ç 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ in order. (G, I, J, O, Q, W excepted) *No character inversion used.

1. The products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this dat asheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.