XB15A105 TOREX | Alldatasheet
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The XB15A105 PIN diode employs a high reliability glass package that is designed for small signal switching. ■General Description GVCRs GVideo Disks GAntenna Switches ■Dimensions ■Applications NLong Carrier Lifetime NSmall Diode Capacitance (0.36pF at VR=0V, f=100MHz) NSmall Series Order Resistance NHighly Surge-proof NSmall Glass Package Ta=25OC SYMBOL PARAMETER RATINGS UNITS VRM Repetitive Peak Reverse Voltage V VR Reverse Voltage V P Power Dissipation 200 mW Tj Junction Temperature 175 OC Tstg Storage Temperature -55 ~ 175 OC IFM Forward Current 150 mA ■Absolute Maximum Ratings MIN 26 MIN 26 MAX 1.5 TYP 0.4 JEDEC DO-34 MAX 2.6 MAX 2.2 Unit: mm Ta=25 OC LIMITS MIN TYP MAX IR1 VR = 30V µA IR2 VR = 28V 0.5 µA IF Forward Current VF = 1.0V mA Ct Diode Capacitance VR = 0V, f = 100MHz 0.36 0.5 pF rfs1 IF = 10mA, f = 50MHz Ω rfs2 IF = 10µA, f = 50MHz 1.0 3.0 kΩ Forward Series Resistance UNITS SYMBOL PARAMETER TEST CONDITIONS Reverse Current ■Electrical Characteristics 15S_01XB15A105 02.9.12 4:39 PM ページ 1049
1.E-04 1.E-03 1.E-02 1.E-01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 ＶF(V) ＩF(A) Ta＝25℃1.E-10 1.E-09 1.E-08 0.1 100 ＶR(V) ＩR(A) Ta＝25℃1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 ＩF(A) ｒｆｓ(Ω) f=50MHz, Ta＝25℃1.E-02 1.E-01 1.E+00 1.E+01 1.E-01 1.E+00 1.E+01 1.E+02 ＶR＋0.65(V) Ｃｔ(pF) Ta＝25℃ｆ＝１ＭＨｚｆ＝100ＭＨｚ1.E+03 1.E+04 1.E+05 1.E+06 0.1 100 ＶR＋0.65(V) ＲＰ(Ω) f=100MHz, Ta＝25℃10 PARALLEL RESISTANCEvs. REVERSE VOLTAGEDIODE CAPACITANCEvs. REVERSE VOLTAGE FORWARD SERIES RESISTANCEvs. FORWARD CURRENT FORWARD CURRENTvs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 15S_01XB15A105 02.9.12 4:39 PM ページ 1050