XB1117 TOREX | Alldatasheet
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◆Bi-polar transistors LDD ◆Output Voltage (1.8V, 2.5V, 3.3V, 5.0V, ADJ) ◆Output Voltage Accuracy : ±1% ◆Output Current :Up to 1A ■GENERAL DESCRIPTION The XB1117 series is a 1A low dropout positive voltage regulator. Output voltage of the XB1117P series is fixed to voltage is adjustable by the external resistors. Please refe r to the absolute maximum ratings for the difference between the rated input voltage of the XB1117P50 (V OUT=5.0V) and the XB1117P18 / 25 / 30 (V OUT=1.8V, 2.5V and 3.0V) and XB1117K type. With the dropout voltage 1.2V (TYP.), output current can be generated up to 1A. The built-in overcurrent circuit and thermal protection circuit start to operate when either one of output put current reaches the current limit level or junction temperature reaches the temperature limit. The XB1117 series provide stable line and load regulation by using an input capacitor (10 μF, tantalum) and an output capacitor. Package is available in SOT-223. ■APPLICATIONS
- Highly efficient linear regulator
- 5V ~ 3V DC / DC converter
- Battery charger
- Local power supply inside equipment
- Battery powered equipment ■TYPICAL APPLICATION CIRCUIT ■FEATURES Low Dropout Voltage Adjustable or Fixed Voltages Line Regulation (TYP.) Load Regulation (TYP.) Adjust pin current less than 120μA (ADJ) Overcurrent protection circuit built-in Thermal protection circuit built-in Package ■ TYPICAL PERFORMANCE CHARACTERISTICS : 1.2V @ IOUT = 1A : 0.04% (ADJ) : 0.1% (ADJ) : SOT-223 Preliminary
1 ADJ/GND ADJ/Ground
2 V OUT Output
3 V IN Power Input
DESIGNATOR DESCRIPTION SYMBOL DESCRIPTION P : Fixed V OUT type ① Type of Regulator K : Adjustable V OUT type 181 : Fixed VOUT 1.80V (±1%) 251 : Fixed VOUT 2.50V (±1%) 331 : Fixed VOUT 3.30V (±1%) 501 : Fixed VOUT 5.00V (±1%) ②③④ Output Voltage & Accuracy 12B : Adjustable VOUT 1.25V (±1%) ⑤ Package F : SOT-223 R : Embossed tape, Standard feed ⑥ Device Orientation L : Embossed tape, Reverse feed SOT-223 （TOP VIEW） ■PIN CONFIGURATION ■PIN ASSIGNMENT ■PRODUCT CLASSIFICATION
- Ordering Information XB1117①②③④⑤⑥
■ PACKAGING INFORMATION
- SOT-223 ■BLOCK DIAGRAM
PARAMETER SYMBOL RATINGS UNITS Input Voltage VIN 10.0 V Thermal Resistance (Junction to Case) θJC 15 Thermal Resistance (Junction to Ambient) θJA 160 ℃/W Power Dissipation (ΔT=100℃) PD 625 mW Operating Temperature Range TOPR 0 ~＋70 Operating Junction Temperature Range TJ 0 ~＋125 Storage Temperature Range TSTG -65 ~＋150 Lead Temperature TLEAD 260 STANDARD VALUE PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS 4.950 5.000 5.050Output Voltage V OUT VIN=7.0V IOUT=0A *Over Temp. 4.900 5.000 5.100 V Line Regulation ΔVOUT1 7.0V≦VIN≦9.0V IOUT=0A *Over Temp. - 1 6 - 5.0 15.2 Load Regulation ΔVOUT2 VIN=7.0V 0A≦IOUT≦1.0A *Over Temp. - 10.1 20.2 mV - 1.2 1.4 Dropout Voltage V dif ΔVOUT=±1％ 0A≦IOUT≦1.0A *Over Temp. - 1.3 - V Supply Current I SS VIN=7.0V 0A≦IOUT≦1.0A *Over Temp. - 6 13 mA Temperature Coefficient TC 7.0V≦VIN≦10.0V 0A≦IOUT≦1.0A - 50 - ppm/℃ Temperature Stability T S VIN=7.0V IOUT=100mA *Over Temp. - 0.5 - ％ ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ *Over Temp. = Over Temperature（0～＋70℃） *Stress above the listed absolute maximum rating may cause permanent damage to the device. ** Please note that the difference between the rated input voltage of the XB1117P50 (V OUT=5.0V) and the XB1117P18 / 25 / 30 (VOUT=1.8V, 2.5V and 3.0V) and XB1117K type. ■ELECTRICAL CHARACTERISTICS XB1117P501 XB1117P50
PARAMETER SYMBOL RATINGS UNITS Input Voltage V IN 7.0 V Thermal Resistance (Junction to Case) θJC 15 Thermal Resistance (Junction to Ambient) θJA 160 ℃/W Power Dissipation (ΔT=100℃) PD 625 mW Operating Temperature Range T OPR 0 ~ 70 Operating Temperature Range T J 0 ~ 125 Storage Temperature Range T STG -65 ~ 150 Lead Temperature T LEAD 260 STANDARD VALUE PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS 1.782 1.800 1.818Output Voltage V OUT VIN=5.0V IOUT=0A *Over Temp. 1.764 1.800 1.836 V Line Regulation ΔVOUT1 4.75V≦VIN≦7.0V IOUT = 0A - 1.0 6.8 mV - 1.80 18.2 Load Regulation ΔVOUT2 VIN=5.0V 0A≦IOUT≦1.0A *Over Temp. - 3.70 22.0 mV - 1.2 1.4 Dropout Voltage Vdif ΔVOUT=±1％ 0A≦IOUT≦1.0A *Over Temp. - 1.3 - V Supply Current I SS VIN=5.0V 0A≦IOUT≦1.0A *Over Temp. - 6 13 mA Temperature Coefficient T C 4.75V≦VIN≦7.0V 0A≦IOUT≦1.0A 50 - ppm/℃ Temperature Stability T S VIN=5.0V IOUT=100mA *Over Temp. - 0.5 - ％ STANDARD VALUE PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS 2.475 2.500 2.525Output Voltage V OUT VIN=5.0V IOUT=0A *Over Temp. 2.450 2.500 2.550 V Line Regulation ΔVOUT1 4.75V≦VIN≦7.0V IOUT=0A - 1.0 6.8 mV - 2.5 25.3 oad Regulation ΔVOUT2 VIN=5.0V 0A≦IOUT≦1.0A *Over Temp. - 5.1 30.3 mV - 1.2 1.4 Dropout Voltage V dif ΔVOUT=±1％ 0A≦IOUT≦1.0A *Over Temp. - 1.3 - V Supply Current I SS VIN=5.0V 0A≦IOUT≦1.0A *Over Temp. - 6 13 mA Temperature Coefficient T C 4.75V≦VIN≦7.0V 0A≦IOUT≦1.0A - 50 - ppm/℃ Temperature Stability T S VIN=5.0V IOUT=100mA *Over Temp. - 0.5 - ％ ■ABSOLUTE MAXIMUM RATINGS TJ=25℃ *Stress above the listed absolute maximum rating may cause permanent damage to the device. ■ELECTRICAL CHARACTERISTICS XB1117P181 *Over Temp. = Over Temperature（0～＋70℃） TJ =25℃ *Over Temp. = Over Temperature（0～＋70℃） （XB1117P18, P25, P33, K） XB1117P251
STANDARD VALUE PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS 3.267 3.300 3.333Output Voltage V OUT VIN=5.0V IOUT=0A *Over Temp. 3.234 3.300 3.366 V Line Regulation ΔVOUT1 4.75V≦VIN≦7.0V IOUT=0A - 1.0 4.5 - 3.4 10.0 Load Regulation ΔVOUT2 VIN=5.0V 0A≦IOUT≦1.0V *Over Temp. - 6.7 13.4 mV - 1.2 1.4 Dropout Voltage V dif ΔVOUT=±1％ 0A≦IOUT≦1.0A *Over Temp. - 1.3 - V Supply Current I SS VIN=5.0V 0A≦IOUT≦1.0A *Over Temp. - 6 13 mA Temperature Coefficient T C 4.75V≦VIN≦7.0V 0A≦IOUT≦1.0A - 50 - ppm/℃ Temperature Stability T S VIN=5.0V IOUT=100mA *Over Temp. - 0.5 - ％ STANDARD VALUE PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS 1.238 1.250 1.262Reference voltage V ref VIN=5.0V IOUT=10mA *Over Temp. 1.225 1.250 1.275 V Line Regulation ΔVOUT1 4.75V≦VIN≦7.0V IOUT=0A - 0.04 0.20 ％ - 0.1 0.3 Load Regulation ΔVOUT2 VIN=5.0V 10ｍA≦IOUT≦1.0A *Over Temp. - 0.2 0.4 - 1.2 1.4 Dropout Voltage V dif ΔVOUT=±1％ 10ｍA≦IOUT≦1.0A *Over Temp. - 1.3 - V Temperature Coefficient T C 2.75V≦VIN≦7.0V 10ｍA≦IOUT≦1.0A - 50 - ppm/℃ 55 - Adjust Pin Current I ADJ 2.75V≦VIN≦7.0V 10ｍA≦IOUT≦1.0A *Over Temp. - - 120 μA Adjust Pin Current Change ΔIADJ 2.75V≦VIN≦7.0V 10ｍA≦IOUT≦1.0A *Over Temp. - 0.2 5.0 μA Temperature Stability T S VIN=5.0V IOUT=100ｍA *Over Temp. - 0.5 - ％ Minimum Load Current I OUT VOUT=5.0V - - 10 mA Ta=25℃ *Over Temp. = Over Temperature（0～＋70℃） XB1117K12B TJ =25℃XB1117P331 *Over Temp. = Over Temperature（0～＋70℃） ■ELECTRICAL CHARACTERISTICS (Continued)
■OPERATIONAL EXPLANATION 1. Output voltage adjustment The XB1117 series provides a stable output by comparing the output voltage to an internal reference voltage. With the adjustable XB1117K type, a 1.25V reference voltage (V REF) is set between the V OUT pin and the ADJ pin and the external resistors R1 and R2 are used to set the output voltage. The resistance values of R1 and R2 should be set so as to provide a minimum load current of 10mA. The output voltage is given by the following equation. V OUT=VREF(1+R2/R1)+IADJ x R2 The output voltage of the XB1117P type is internally fixed to 1.8V, 2.5V, 3.3V, and 5.0V so external resistors are not necessary. 2. Stability and load regulation The XB1117 series requires a load capacitor between the VOUT pin and the GND pin to provide phase compensation thereby ensuring stability of the output voltage. Ei ther a tantalum capacitor of more than 10 μF (TYP.) or an aluminum electrolytic capacitor of more than 50μF (TYP.) should be connected. (Note : The capacitor's ESR value should not exceed 0.5Ω.) The output capacitor does not have a theoretical upper limit so increasing its value will increase stability. C L=100μF or more is typical for high current regulator design. In order to avoid any reductions in output voltage accuracy wi th the XB1117K type, we recommend that you do not place a parasitic resistor (Rp) between the V OUT pin and the divider resistor R1. The parasitic resistor (Rp) does not influence the output however if the divider resistor R1 is directly connected to the VOUT pin. With the XB1117P type, although external resistor (R1) is internally connected to the VOUT pin, stability can be maintained by not wiring a parasitic resistor to the GND pin. 3. Thermal protection XB1117 series has themal protection which limits junction temperature to 150 ℃. However,device functionally is only guaranteed to a maximum junction temperture of + 125℃. The power disspation and junction temperture for XB1117 in DPAK package are given by P D=(VIN-VOUT)×IOUT TJUNCTION=T AMBIENT+（PD×θJA） NOTE：T JUNCTION must not exceed 125℃.
- Current limit protection XB1117 series is protected against overload conditions. Current protection is triggered at 1.5A (TYP.). 5. Thermal consideration The XB1117 series contain thermal limiting circuitry designed to protect itself from over-t emperature conditions. Even fo r normal load conditions, maximum junction temperature ratings must not be exceeded. As ment ioned in thermal protection section, we need to consider all sources of thermal resist ance between junction and ambient. It includes junction-to-case, case-to-heat-sink interface and heat sink thermal resistance itself. Junction-to-case thermal resistance is specified from the IC junction to the bottom of the case directly below the die. Prope r mounting is required to ensure the best possible thermal flow from this area of the package to t he heat sink. The case of all devices in this product series is electrically connected to th e output. Therefore, if the case of the device must be electrical ly isolated, a thermally conductive spacer is recommended. ■APPLICATION CIRCUITS Adjustable Output Voltage ■OPERATIONAL EXPLANATION (Continued) VIN VIN=5V *VOUT=1.5-3.45V 10μF **10μF 10μF 1kΩ Note: *V OUT=VREF (1+ )+IADJ×R2 **Optional for improved ripple rejection 2kΩ VOUT ADJ XB1117K
Regulator with reference voltage ■APPLICATION CIRCUITS (Continued) Regulator with reverse diode protection VIN VIN VREF VIN *VOUT VOUT 10μF **10μF 10μF 10μF 10μF R1：1kΩ Zener diode or voltage reference Note: *VOUT=VREF+VZ(VZ: Breakdown voltage of Zener diode) **Optional for improved ripple rejection VOUT GND VIN VOUT GND XB1117 XB1117 10 μＦ Note: *Vout = V REF+VZ(VZ: Breakdown voltage of Zener diode) ** Optional for improved ripple rejection
XB117K12B V IN=5V I OUT=1A CIN=10μF(tantalum),CL=10μF(tantalum) XB117P33 T J=25% CIN=10μF(tantalum),CL=10μF(tantalum) XB117P33 T J=25℃ CIN=10μF(tantalum),CL=10μF(tantalum) XB117K12B V IN=5.0V CIN=10μF(tantalum),CL=10μF(tantalum) XB117P33 T J=25％ CIN=10μF(tantalum),CL=10μF(tantalum) XB117K12B V IN=5V I LOAD=1A CIN=10μF(tantalum),CL=10μF(tantalum) ■TYPICAL PERFORMANCE CHARACTERISTICS (5) Adjust Pin Current－Ambient Temperature (3) Output Short Circuit Current－Dropout Voltage (1) Load Stability－Ambient Temperature (2) Reference Voltage－Ambient Temperature (6) Supply Current－Dropout Voltage (4) Dropout Voltage－Output Current (8) Input Transient Response (7) Load Transient Response