UPA672T-T2-A VBSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition Low On-Resistance:2.5 Ω Low Threshold: 2 V (typ.) Low Inpu t Cap acitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET ® Power MOSFET Compliant to RoHS Directive 2002/95/EC BENEFITS Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed C ircuits Low Error Voltage
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transi stors, etc. Battery Oper ated Systems Solid-State Relays Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C ID 300 mATA = 100 °C 190 Pulsed Drain Currenta IDM 800 Power Dissipationb TA = 25 °C PD 0.35 WTA = 100 °C 0.14 Maximum Junction-to-Ambientb RthJA 350 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C SOT-363 SC-70 Top View S 1 G 1 D 2 D 1 G 2 S 2 PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (mA) 60 2.5 at VGS = 10 V 300 Dual N-Channel 60 V (D-S) MOSFET E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UPA672T-T2-A A ll data sheet.com
Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of ope rating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12 .5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µAVDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V , TJ = 125 °C 500 On-State Drain Currenta ID(on) VGS = 10 V, VDS = 7.5 V 800 mAVGS = 4.5 V, VDS = 10 V 500 Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 500 mA 2.5 ΩVGS = 4.5 V, ID = 200 mA 3.2 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 100 mS Diode Forward Voltage VSD IS = 200 mA, VGS = 0 V 1.3 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V ID ≅ 250 mA 0.4 0.6 nC Input Capacitance Ciss VDS = 25 V, VGS = 0 V f = 1 MHz pFOutput Capacitance Coss 6 Reverse Transfer Capacitance Crss 2.5 Switchinga, b, c Tur n-On Time td(on) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω ns Turn-Off Time td(off) 35 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UPA672T-T2-A A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 012 345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 10 V 3 V 5 V 4 V
6 V7 V
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 200 400 600 800 1000 ID - Drain Current (mA) V GS = 4.5 V V GS = 10 V - On-Resistance (Ω)RDS(on) VDS = 10 V ID = 250 mA - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 300 600 900 1200 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (mA)ID T J = - 55 °C 125 °C 25 °C 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss VGS = 0 V 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 TJ - Junction Temperature (°C) V GS = 10 V at 500 mA V GS = 4.5 V at 200 mA (Normalized) - On-ResistanceRDS(on) E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UPA672T-T2-A A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.0 0.3 0.6 0.9 TJ = 125 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = - 55 °C V GS = 0 V TJ = 25 °C Variance (V)VGS(th) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA TJ - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power, Junction-to-Ambient 02468 10 V GS - Gate-to-Source Voltage (V) ID = 500 mAID = 200 mA - On-Resistance (Ω)RDS(on) 0.01 2.5 100 600 0.1 Power (W) Time (s) 1.5 0.5 T A = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambi ent 10 10 -3 10 -2 1 10 60010 -1 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th JA = 350 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UPA672T-T2-A A ll data sheet.com
Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 1 1010 -1 10 -4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Note
- The characteristics shown in the two gr aphs Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal im pedance charac teristics which are de veloped fr om empirical m easurements. The la tter is va lid for the part mounted on printed circuit board - FR 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual applicat ion parameters and operating conditions. E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UPA672T-T2-A A ll data sheet.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UPA672T-T2-A A ll data sheet.com