UPA652TT

UPA652TT VBSEMI | Alldatasheet

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Technical content

P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A)a Qg (Typ.) - 20 0.041 at VGS = - 4.5 V - 4 12.5 nC0.054 at VGS = - 2.5 V - 4 0.100 at VGS = - 1.8 V - 4 SOT-363 SC-70 (6-LEADS) Top View D D G D D S Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4a A TC = 70 °C - 4 TA = 25 °C - 4a, b, c TA = 70 °C - 4a, b, c Pulsed Drain Current (t = 300 µs) IDM - 25 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.3 TA = 25 °C - 1.3b, c Maximum Power Dissipation TC = 25 °C PD 2.8 W TC = 70 °C 1.8 TA = 25 °C 1.6b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-A mbientb, d t  5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 001 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test C onditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 11 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 2.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 8 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) V DS - 5 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5 A 0.034 0.041 VGS = - 2.5 V, ID = - 4.4 A 0.045 0.054 VGS = - 1.8 V, ID = - 1 A 0.067 0.100 Forward Transconductancea gfs VDS = - 10 V, ID = - 5 A 16 S Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 5 A 22 33 nCGate-Source Charge VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 12.5 19 Qgs 1.8 Gate-Drain Charge Qgd 3.3 Gate Resistance Rg f = 1 MHz 0.08 0.43 0.86 k  Tur n-On Delay T ime td(on) VDD = - 10 V, RL = 1.4  ID  - 4 A, VGEN = - 4.5 V, Rg = 1  150 225 ns Rise Time tr 300 450 Turn-Off Delay Time td(off) 1620 2430 Fall Time tf 560 840 Tur n-On Delay Time td(on) VDD = - 10 V, RL = 1.4  ID  - 4 A, VGEN = - 10 V, Rg = 1  50 100 Rise Time tr 90 180 Turn-Off Delay Time td(off) 2500 3750 Fall Time tf 600 900 Drain-Source Body Diode Characteristics Continuous Source-Dr ain Diode Current I S TC = 25 °C - 2.3 A Pulse Diode Forward Current ISM - 25 Body Diode Voltage VSD IS = - 4 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 18 36 ns Body Diode Reverse Recovery Charge Q rr 81 6 n C Reverse Recovery Fall Time ta 18 ns Reverse Recovery Rise Time tb 10 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) Gate Current vs. Gate-Source Voltage Output Characteristics On-R esistance vs. Drain Current 0369 1 2 1 5 IGSS - Gate Current (mA) VGS - Gate-Source Voltage (V) 0.02 0.04 0.06 0.08 0.1 VGS =5Vt h r u3V VGS =2 . 5V VGS =1 . 5V VGS =2V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 VGS =2 . 5V VGS =1 . 8V VGS =4 . 5V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) Gate Current vs. Gate-Source Voltage Transfer Characteristics Gate Char ge 0369 1 2 1 5 IGSS - Gate Current (A) VGS - Gate-Source Voltage (V) 10-10 10-9 10-8 10-6 10-4 10-7 10-5 TJ = 25 °C TJ = 150 °C 0 0.5 1.0 1.5 2.0 TC = - 55 °C TC = 125 °C TC = 25 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 0 5 10 15 20 25 ID =5A VDS =5V VDS =1 0V VDS =1 6V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Thresho ld Voltage 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS = - 2.5 V; ID =-4 . 4A VGS =-4 . 5V ;I D =-5A TJ - Junction Temperature (°C) (Normalized) RDS(on) - On-Resistance 0.02 0.04 0.06 0.08 0.10 12345 ID =-5A TJ =2 5 ° C TJ = 125 °C RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0.001 0.01 0.1 1 10 Time (s) Power (W) Source-Drain Diode Forward Voltage Single Pulse Power, Junct ion-to-Ambient Safe Operating Area, Junction-to-Ambient 0.1 100 00 .5 1 .0 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) 0.30 0.45 0.60 0.75 0.90 - 50 - 25 0 25 50 75 100 125 150 ID = - 250 μA VGS(th) (V) TJ - Temperature (°C) 100 0.1 1 10 100 0.01 0.1 TA =2 5 °C Single Pulse 1s ,1 0s Limited by RDS(on)* BVDSS Limited 1m s 100 μs 10 ms DC 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) ID - Drain Current (A) Power Derating, Junction-to-Foot 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) Normalized Thermal Transient Impedance, Junction-to-Amb ient 10-4 10-3 10-2 10-1 1 10 100 1000 0.1 0.01 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Notes: 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125 °C/W 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted PDM Duty Cycle = 0.5 Single Pulse 0.2 0.05 0.1 0.02 Normalized Thermal Transient Impedance, Junction-to-Foot 10-4 10-3 10-2 10-1 11 0 0.1 0.01 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Single Pulse 0.2 0.05 0.1 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

L c EE1 e D A2 A -A- b -B- 654 /C0083/C0067/C0262/C0055/C0048/C0058/C0032/C0032/C0032/C0054/C0262/C0076/C0069/C0065/C0068/C0083 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Nom Max Min Nom Max A 0.90 – 1.10 0.035 – 0.043 A 2 0.80 – 1.00 0.031 – 0.039 b 0.15 – 0.30 0.006 – 0.012 c 0.10 – 0.25 0.004 – 0.010 e 0.65BSC 0.026BSC 7/C0095Nom 7/C0095Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.096 (2.438) Recommended Minimum Pads Dimensions in Inches/(mm) 0.067 (1.702) 0.026 (0.648) 0.045 (1.143) 0.016 (0.406) 0.026 (0.648) 0.010 (0.241) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 UPA652TT A ll data sheet.com