UM3004 XINDEYI | Alldatasheet
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z H i g h F r e q u e n c y P o i n t - o f - L o a d S y n c h r o n o u s Buck Converter for MB/NB/UMPC/VGA z N e t w o r k i n g D C - D C P o w e r S y s t e m z L o a d S w i t c h Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery Unitpower The UM3004 is the highest performance trench The UM3004 meet the RoHS and Green Product Top View
N-Ch 30V Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D ϦBV DSS ˂ϦT J BVDSS Temperature Coefficient Reference to 25ć, I D R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =10V , I D =10A --- 7.5 9 V GS =4.5V , I D =8A --- 11 14 V GS(th) G a t e T h r e s h o l d V o l t a g e V GS DS , I D =250uA 1.2 1.5 2.5 V ϦV GS(th) V GS(th) Temperature Coefficient --- -5.8 --- mV/ć I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =24V , V GS =0V , T J =25ć --- --- 1 uA V DS =24V , V GS =0V , T J =55ć --- --- 5 I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =5V , I D =10A --- 5.8 --- S R g G a t e R e s i s t a n c e V DS =0V , V GS Q g T o t a l G a t e C h a r g e ( 4 . 5 V ) V DS =15V , V GS =4.5V , I D =10A --- 12.6 17.6 nC Q gs G a t e - S o u r c e C h a r g e - - - 4 . 2 5 . 9 Q gd Gate-Drain Charge --- 5.1 7.1 T d(on) T u r n - O n D e l a y T i m e V DD =15V , V GS =10V , R G =3.3: I D =10A --- 6.2 12.4 ns T r R i s e T i m e - - - 5 9 1 0 6 T d(off) T u r n - O f f D e l a y T i m e - - - 2 7 . 6 5 5 T f F a l l T i m e - - - 8 . 4 1 6 . 8 C iss I n p u t C a p a c i t a n c e V DS =15V , V GS =0V , f=1MHz --- 1317 1845 pF C oss O u t p u t C a p a c i t a n c e - - - 1 6 3 2 2 8 . 2 C rss R e v e r s e T r a n s f e r C a p a c i t a n c e - - - 1 3 1 1 8 3 . 4 Symbol Parameter ʳ Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =20A 45 --- --- mJ Symbol Parameter ʳ Conditions Min. Typ. Max. Unit I S C o n t i n u o u s S o u r c e C u r r e n t 1,6 V G D =0V , Force Current --- --- 10.3 A I SM P u l s e d S o u r c e C u r r e n t 2,6 - - - - - - 4 2 A V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =1A , T J =25ć --- --- 1.2 V t rr R e v e r s e R e c o v e r y T i m e I F =10A , dI/dt=100A/µs , T J =25ć --- 12.5 --- nS Q rr R e v e r s e R e c o v e r y C h a r g e - - - 5 - - - n C Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 3 0 0 u s , d u t y c y c l e 2 % 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =35A 4.The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25ć, unless otherwise noted) Diode Characteristics Guaranteed Avalanche Characteristics Unitpower UM3004
N-Ch 30V Fast Switching MOSFETs 00 . 511 . 522 . 53 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mȍ) I D =10A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S - Source Current(A) T J =150к T J =25к 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (к ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (к) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J Unitpower UM3004
N-Ch 30V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 2 5 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 V DS (V) I D (A) T A =25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R șJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR șJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform Unitpower UM3004