UM3301 XINDEYI | Alldatasheet
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z P o w e r m a n a g e m e n t i n h a l f b r i d g e a n d i n v e r t e r s z D C - D C C o n v e r t e r z L o a d S w i t c h Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery
N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D ϦBV DSS ˂ϦT J BVDSS Temperature Coefficient Reference to 25ć, I D V GS =10V , I D =10A --- 15 20 R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =4.5V , I D =8A --- 22 30 V GS(th) G a t e T h r e s h o l d V o l t a g e 1 . 0 1 . 5 2 . 5 V ϦV GS(th) V GS(th) Temperature Coefficient V GS DS , I D =250uA --- -5.8 --- mV/ć V DS =30V , V GS =0V , T J =25ć --- --- 1 I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =30V , V GS =0V , T J =55ć --- --- 5 uA I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =15V , I D =10A --- 10 --- S R g G a t e R e s i s t a n c e V DS =24V , V GS Q g T o t a l G a t e C h a r g e ( 4 . 5 V ) - - - 7 . 2 - - - Q gs G a t e - S o u r c e C h a r g e - - - 1 . 4 - - - Q gd G a t e - D r a i n C h a r g e V DS =20V , V GS =4.5V , I D =10A --- 2.2 --- nC T d(on) T u r n - O n D e l a y T i m e - - - 4 . 1 - - - T r R i s e T i m e - - - 9 . 8 - - - T d(off) T u r n - O f f D e l a y T i m e - - - 1 5 . 5 - - - T f F a l l T i m e V DD =12V , V GS =10V , R G =3.3: I D =5A --- 6.0 --- ns C iss I n p u t C a p a c i t a n c e - - - 5 5 0 - - - C oss O u t p u t C a p a c i t a n c e - - - 6 8 - - - C rss R e v e r s e T r a n s f e r C a p a c i t a n c e V DS =25V , V GS =0V , f=1MHz --- 55 --- pF Symbol Parameter ʳ Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =10A 16 --- --- mJ Symbol Parameter ʳ Conditions Min. Typ. Max. Unit I S C o n t i n u o u s S o u r c e C u r r e n t 1,6 - - - - - - 1 0 A I SM P u l s e d S o u r c e C u r r e n t 2,6 V G D =0V , Force Current --- --- 20 A V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =5A , T J =25ć --- --- 1.2 V N-Channel Electrical Characteristics (T J =25ć, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 3 0 0 u s , d u t y c y c l e 2 % 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =21A 4.The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics
N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D ϦBV DSS ˂ϦT J BV DSS Temperature Coefficient Reference to 25ć, I D V GS =-10V , I D =-6A --- 35 45 R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =-4.5V , I D =-3A --- 65 85 V GS(th) G a t e T h r e s h o l d V o l t a g e - 1 . 0 - 1 . 5 - 2 . 5 V ϦV GS(th) V GS(th) Temperature Coefficient V GS DS , I D =-250uA --- 0.375 --- mV/ć V DS =-24V , V GS =0V , T J =25ć --- --- 1 I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =-24V , V GS =0V , T J =55ć --- --- 5 uA I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =-10V , I D =-6A --- 6 --- S Q g T o t a l G a t e C h a r g e ( - 4 . 5 V ) - - - 6 . 4 - - - Q gs G a t e - S o u r c e C h a r g e - - - 2 . 7 - - - Q gd G a t e - D r a i n C h a r g e V DS =-20V , V GS =-4.5V , I D =-6A --- 3.1 --- nC T d(on) T u r n - O n D e l a y T i m e - - - 9 - - - T r R i s e T i m e - - - 1 6 . 6 - - - T d(off) T u r n - O f f D e l a y T i m e - - - 2 1 - - - T f F a l l T i m e V DD =-12V , V GS =-10V , R G =3.3:, I D =-5A --- 21.6 --- ns C iss I n p u t C a p a c i t a n c e - - - 6 4 5 - - - C oss O u t p u t C a p a c i t a n c e - - - 2 7 2 - - - C rss R e v e r s e T r a n s f e r C a p a c i t a n c e V DS =-25V , V GS =0V , f=1MHz --- 105 --- pF Symbol Parameter ʳ Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter ʳ Conditions Min. Typ. Max. Unit I S C o n t i n u o u s S o u r c e C u r r e n t 1,6 - - - - - - - 6 A I SM P u l s e d S o u r c e C u r r e n t 2,6 V G D =0V , Force Current --- --- -12 A V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =-6A , T J P-Channel Electrical Characteristics (T J =25ć, unless otherwise noted) Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 3 0 0 u s , d u t y c y c l e 2 % 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-19A 4.The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics Diode Characteristics
N-Ch and P-Ch Fast Switching MOSFETs 00 . 511 . 5 V DS Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mȍ) I D =10A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S - Source Current(A) T J =150к T J =25к 1.5 4.5 02 . 557 . 5 1 0 Q G , Total Gate Charge (nC) V GS , Gate to Source Voltage (V) V DS =20V I D =10A 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (к) Normalized V GS(th) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 -50 0 50 100 150 T J , Junction Temperature (к) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J
N-Ch and P-Ch Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 2 5 V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 100 0.1 1 10 100 V DS (V) I D (A) 10us 100us 10ms 100ms DC T C =25к Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R șJC 0.01 0.02 0.1 0.2 DUTY=0.5 0.001 P DM D = T ON T Jpeak = T C DM XR șJC T ON T 0.05 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform
N-Ch and P-Ch Fast Switching MOSFETs 00 . 511 . 52 DS , Drain-to-Source Voltage (V) D Drain Current (A) V GS =-10V V GS =-7V V GS =-5V V GS =-4.5V V GS =-3V 117 144 2468 1 0 GS (V) R DSON (mȍ) ID=-10A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150к T J =25к 048 1 2 Q G , Total Gate Charge (nC) GS Gate to Source Voltage (V) V DS =-20V I D =-6A 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (к) Normalized -V GS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 T J , Junction Temperature (к) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J
N-Ch and P-Ch Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 2 5 DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 100 0.1 1 10 100 DS (V) D (A) T C =25 к Single Pulse DC 100ms 10ms 1ms 100us 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R șJC P DM D = T ON T Jpeak = T C + P DM x R șJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform