UM8220N8 XINDEYI | Alldatasheet

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Dual N-C hannel E nhancement Mode F ield E ffect T ransistor S urface Mount P ackage. AB S OLUT E MAXIMUM R AT ING S (T A =25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S 12 V I D 1.7 1.56 A A A W I DM Drain-S ource Diode F orward C urrent I S Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R J A 80 /WC a a a Oct.23 2006 ver1.1 P R ODUC T S UMMAR Y V DS S I D R DS (ON) ( m W ) Max 20V 7A F E AT UR E S S uper high dense cell design for low R DS (ON R ugged and reliable. 20 @ V G S = 4.0V 28 @ V G S = 2.5V Drain C urrent-C ontinuous @ T J =25 C -P ulsed b E S D P rotected. DF N 2X3 Bottom Drain Contact Bottom Drain Contact 4 5 S1 S2 (B ottom view) D1/D2 P IN 1 Unitpower Unitpower UM8220N8

E LE C T R IC AL C HAR AC T E R IS T IC S (T A

25 C unles s otherwis e noted)=

P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S G S 0V, I D 250uA= 20 V Zero G ate Voltage Drain C urrent I DS S V DS 16V, V G S 0V= = 1 uA G ate-B ody Leakage I G S S V G S 12V,V DS 0V= = 10 uA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , I D = 250uA= 0.5 V Drain-S ource On-S tate R esistance R DS (ON) c C m ohm V G S 4.0V, I D 7A= = 20 F S c SF orward Transconductance g V DS 5V, I D DY NAMIC C HAR AC T E R IS T IC S Input C apacitance C IS S C R S S C OS S Output C apacitance R everse Transfer C apacitance V DS =10V, V G S = 0V f =1.0MH Z P F P F P F S WIT C HING C HAR AC T E R IS T IC S Turn-On Delay Time R ise Time Turn-Off Delay Time t D(ON) t r t D(OF F ) t f V DD = 10V, I D = 1A, V G E N = 4.0V, R G E N = 6 ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Q g Q gs Q gd V DS =10V, I D = 4A, V G S =4.0V nC nC nC F all T ime = = V G S 2.5V, I D 4A= = m ohm 1.5 670 140 188 4.2 1.4 17.5 0.8 UM8220N8

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0 V, Is = 1.7A 1.2 V b Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and Temperature I D , Drain C urrent (A) V G S , G ate-to-S ource Voltage (V ) R DS (on) W On-R esistance I D , Drain C urrent (A) R DS (ON) , Normalized 25 125 0.8 T j( C ) 10050 75 T j, J unction T emperature ( C ) F igure 1. Output C haracteristics V DS , Drain-to-S ource Voltage (V ) I D , Drain C urrent(A) 0 0.5 1 1.5 2 2.5 3 V G S =1.5V V G S =4V V G S =2.5V F igure 3. On-R esistance vs. Drain C urrent and G ate V oltage 4 8 12 16 201 V G S =2.5V V G S =4V T j=125 C V G S =2V 150 a.S urface Mounted on F R 4 B oard, t <=10sec. 25 C V G S =2.5V I D =4A 0.8 1.8 1.6 1.4 1.2 1.0 -55 C V G S =4V I D =6A UM8220N8

F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltage B V DS S , Normalized Drain-S ource B reakdown V oltage Is , S ource-drain current (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D , B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 20.0 10.0 1.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS G S I D =250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 I D =250uA V G S , G ate-S ource Voltage (V ) R DS (on) W F igure 7. On-R esistance vs. G ate-S ource V oltage 2 4 6 8 100 F igure 5. G ate T hres hold V ariation with T emperature 125 C I D =4A 5.0 25 C 75 C 75 C 15.0 125 C 25 C UM8220N8

V G S , G ate to S ource V oltage (V ) F igure 10. G ate C harge Q g, T otal G ate C harge (nC ) 0 2 4 6 8 10 12 14 16 V DS =10V I D =4A F igure 9. C apacitance V DS , Drain-to S ource Voltage (V ) C , C apacitance (pF ) 900 750 600 450 300 150 C iss C oss C rss F igure 11.s witching characteris tics R g, G ate R es is tance ( W S witching T ime (ns ) F igure 12. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) I D , Drain C urrent (A) 0.1 0.03 0.1 1 10 30 50 V G S =4V S ingle P uls e T A =25 C 10ms 100ms DC R DS (ON) Limit 100 6 10 60 100 600300 600 V DS =10V ,ID=1A V G S = V T D (o ff) T f T D (on) T r 2 4 6 8 10 12 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , TIME (sec) R JA (t ) = r( t) * R JA R JA =80 °C/W SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Normalized Transient Thermal Resistance Figure 13. Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve P(pk) t t T - J T A = P * R JA (t) Duty Cycle , D = t1 / t2 UM8220N8

E D A B L H Θ C 0.80 1.00 0.031 0.025 0.001 2.05 1.65 H 0.039 2.95 0.00 3.05 0.116 0.120 1.95 0.077 0.081 0.30 0.45 0.014 0.018 1.45 1.55 0.057 0.061 1.75 0.065 0.069 0.195 0.211 0.0076 0.008 D E L B C 0.18 0.28 0.007 0.011 0.00 DFN PACKAGE OUTLINE DIMENSIONS F F 0.22 0.32 0.008 0.126 UM8220N8

U DFN Tape and Reel Data UM8220N8