UM3304

UM3304 XINDEYI | Alldatasheet

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z H i g h F r e q u e n c y P o i n t - o f - L o a d S y n c h r o n o u s Buck Converter for MB/NB/UMPC/VGA z N e t w o r k i n g D C - D C P o w e r S y s t e m z C C F L B a c k - l i g h t I n v e r t e r Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery

N-Ch and P-Ch 30V Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D ϦBV DSS ˂ϦT J BVDSS Temperature Coefficient Reference to 25ć, I D V GS =10V , I D =4A --- 38 45 R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =4.5V , I D =2A --- 56 70 V GS(th) G a t e T h r e s h o l d V o l t a g e 1 . 0 1 . 5 2 . 5 V ϦV GS(th) V GS(th) Temperature Coefficient V GS DS , I D =250uA --- -3.04 --- mV/ć V DS =24V , V GS =0V , T J =25ć --- --- 1 I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =24V , V GS =0V , T J =55ć --- --- 5 uA I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =5V , I D =4A --- 8 --- S R g G a t e R e s i s t a n c e V DS =0V , V GS Q g T o t a l G a t e C h a r g e ( 4 . 5 V ) - - - 2 . 7 5 Q gs G a t e - S o u r c e C h a r g e - - - 0 . 6 7 Q gd G a t e - D r a i n C h a r g e V DS =20V , V GS =4.5V , I D =4A --- 1.52 nC T d(on) T u r n - O n D e l a y T i m e - - - 3 . 6 T r R i s e T i m e - - - 1 4 . 6 T d(off) T u r n - O f f D e l a y T i m e - - - 1 1 . 5 T f F a l l T i m e V DD =15V , V GS =10V , R G =3.3: I D =4A --- 1.9 ns C iss I n p u t C a p a c i t a n c e - - - 2 2 0 C oss O u t p u t C a p a c i t a n c e - - - 3 8 C rss R e v e r s e T r a n s f e r C a p a c i t a n c e V DS =15V , V GS =0V , f=1MHz --- 32 pF Symbol Parameter ʳ Conditions Min. Typ. Max. Unit I S C o n t i n u o u s S o u r c e C u r r e n t 1,4 I SM P u l s e d S o u r c e C u r r e n t 2,4 V G D =0V , Force Current --- --- 9.2 A V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =1A , T J =25ć --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width œ 3 0 0 u s , d u t y c y c l e œ 2 % 3.The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (T J =25ć, unless otherwise noted) Diode Characteristics

N-Ch and P-Ch 30V Fast Switching MOSFETs Symbol Parameter ʳ Conditions Min. Typ. Max. Unit BV DSS D r a i n - S o u r c e B r e a k d o w n V o l t a g e V GS =0V , I D ϦBV DSS ˂ϦT J BV DSS Temperature Coefficient Reference to 25ć, I D V GS =-10V , I D =-3A --- 105 125 R DS(ON) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e V GS =-4.5V , I D =-1.5A --- 180 215 V GS(th) G a t e T h r e s h o l d V o l t a g e - 1 . 0 - 1 . 5 - 2 . 5 V ϦV GS(th) V GS(th) Temperature Coefficient V GS DS , I D =-250uA --- 3.72 --- mV/ć V DS =-24V , V GS =0V , T J =25ć --- --- 1 I DSS D r a i n - S o u r c e L e a k a g e C u r r e n t V DS =-24V , V GS =0V , T J =55ć --- --- 5 uA I GSS G a t e - S o u r c e L e a k a g e C u r r e n t V GS ːf20V , V DS gfs Forward Transconductance V DS =-5V , I D =-3A --- 3.8 --- S R g G a t e R e s i s t a n c e V DS =0V , V GS Q g T o t a l G a t e C h a r g e ( - 4 . 5 V ) - - - 3 . 3 - - - Q gs G a t e - S o u r c e C h a r g e - - - 0 . 8 8 - - - Q gd G a t e - D r a i n C h a r g e V DS =-20V , V GS =-4.5V , I D =-1A --- 1.55 --- nC T d(on) T u r n - O n D e l a y T i m e - - - 9 . 6 - - - T r R i s e T i m e - - - 6 . 7 - - - T d(off) T u r n - O f f D e l a y T i m e - - - 2 1 . 5 - - - T f F a l l T i m e V DD =-15V , V GS =-10V , R G =3.3:, I D =-1A --- 3.3 --- ns C iss I n p u t C a p a c i t a n c e - - - 2 0 3 - - - C oss O u t p u t C a p a c i t a n c e - - - 4 2 - - - C rss R e v e r s e T r a n s f e r C a p a c i t a n c e V DS =-15V , V GS =0V , f=1MHz --- 34 --- pF Symbol Parameter ʳ Conditions Min. Typ. Max. Unit I S C o n t i n u o u s S o u r c e C u r r e n t 1,4 - - - - - - - 3 A I SM P u l s e d S o u r c e C u r r e n t 2,4 V G D =0V , Force Current --- --- -6 A V SD D i o d e F o r w a r d V o l t a g e V GS =0V , I S =-1A , T J Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width œ 3 0 0 u s , d u t y c y c l e œ 2 % 3The power dissipation is limited by 150ć j u n c t i o n t e m p e r a t u r e 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (T J =25ć, unless otherwise noted) Diode Characteristics

N-Ch and P-Ch 30V Fast Switching MOSFETs 00 . 511 . 52 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 40.0 50.0 60.0 70.0 80.0 2468 1 0 V GS (V) R DSON (mȍ) I D =4A 00 . 3 0 . 6 0 . 9 1 . 2 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150к T J =25к 0246 Q G , Total Gate Charge (nC) V GS Gate to Source Voltage (V) I D =4A 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( к) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (к) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch 30V Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 2 5 V DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 V DS (V) I D (A) T A =25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R șJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR șJA T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

N-Ch and P-Ch 30V Fast Switching MOSFETs 00 . 5 11 . 52 DS , Drain-to-Source Voltage (V) D Drain Current (A) V GS =-10V V GS =-7V V GS =-5V V GS =-4.5V V GS =-3V 130 170 210 250 468 1 0 GS (V) R DSON (mȍ) I D =-3A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150к T J =25к 0246 Q G , Total Gate Charge (nC) GS Gate to Source Voltage (V) V DS =-15V I D =-1A 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( к) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (к) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J Fig.6 Normalized R DSON v.s T J

N-Ch and P-Ch 30V Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 2 5 DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 DS (V) D (A) T A =25 o C Single Pulse 100ms 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R șJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR șJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform