UD2410

UD2410 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO-252 Pin Configuration Product Summery BV RDDSS S(ON)

N-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =15A --- 20 25 mΩ V GS =2.5V , I D =10A --- 27 34 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 0.5 0.7 1.2 V GS(th) V GS(th) Temperature Coefficient --- -3.1 --- mV/℃ I DSS Drain-Source Leakage Current V DS =16V , V GS =0V , T J =25℃ --- --- 1 uA V DS =16V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±12V , V DS gfs Forward Transconductance V DS =5V , I D R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 1.5 3 Ω Q g Total Gate Charge (4.5V) V DS =15V , V GS =4.5V , I D =15A --- 9.4 13.2 nC Q gs Gate-Source Charge --- 1.57 2.2 Q gd Gate-Drain Charge --- 2.7 3.8 T d(on) Turn-On Delay Time V DD =10V , V GS =4.5V , R G =3.3Ω I D =15A --- 4.4 8.8 ns T r Rise Time --- 29 52 T d(off) Turn-Off Delay Time --- 22 44 T f Fall Time --- 8.4 16.8 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 635 889 pF C oss Output Capacitance --- 70 98 C rss Reverse Transfer Capacitance --- 63 88 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 22 A I SM Pulsed Source Current 2,4 --- --- 50 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =15A , dI/dt=100A/µs , T J =25℃ --- 4.6 --- nS Q rr Reverse Recovery C harge --- 0.57 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics UD2410

N-Ch 20V Fast Switching MOSFETs 00 . 4 0 . 8 1 . 2 1 . 62 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =4.5V V GS =3V V GS =2.5V V GS =1.8V V GS =5V 0 0.3 0.6 0.9 1.2 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =175℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD2410

N-Ch 20V Fast Switching MOSFETs 100 1000 1 4 7 10 13 16 19 22 V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 V DS (V) I D (A) Tc=25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UD2410