UM0204

UM0204 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery

Dual N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =4A --- 63.5 80 mΩ V GS =4.5V , I D =3A --- 70 91 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.6 2.2 2.7 V GS(th) V GS(th) Temperature Coefficient --- --- --- mV/℃ I DSS Drain-Source Leakage Current V DS =48V , V GS =0V , T J =25℃ --- --- 1 uA V DS =48V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =3A --- 20 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz 0.7 1.45 2.2 Ω Q g Total Gate Charge (10V) V DS =50V , V GS =10V , I D =3A 13 16.3 20 nC Q gs Gate-Source Charge 2.2 2.8 3.4 Q gd Gate-Drain Charge 2.4 4.1 5.8 T d(on) Turn-On Delay Time V DD =50V , V GS =10V , R G =3 Ω --- 6 --- ns T r Rise Time --- 2.5 --- T d(off) Turn-Off Delay Time --- 21 --- T f Fall Time --- 2.4 --- C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz 620 778 974 pF C oss Output Capacitance 38 55 81 C rss Reverse Transfer Capacitance 13 24 35 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 2.5 A Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics Guaranteed Avalanche Characteristics UM0204

Dual N-Ch 100V Fast Switching MOSFETs 00 . 511 . 522 . 5 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mΩ) I D =4A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S - Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistanc e Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM0204

Dual N-Ch 100V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 2 5 V DS Drain to Source Voltage(V) Capacitance(pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T A DM XR θJA T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UM0204