UG2502W

UG2502W XINDEYI | Alldatasheet

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z Power management in portable and battery operated products z DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TSSOP8 Pin Configuration Product Summery BV DSS R DS(ON)

Dual N-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =5A --- 17 22 mΩ V GS =2.5V , I D =4A --- 21 28 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 0.5 0.8 1.2 V GS(th) V GS(th) Temperature Coefficient --- -3.58 --- mV/℃ I DSS Drain-Source Leakage Current V DS =16V , V GS =0V , T J =25℃ --- --- 1 uA V DS =16V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±12V , V DS gfs Forward Transconductance V DS =5V , I D =5A --- 25.4 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 1.5 3 Ω Q g Total Gate Charge (4.5V) V DS =15V , V GS =4.5V , I D =5A --- 11.3 15.8 nC Q gs Gate-Source Charge --- 1.59 2.2 Q gd Gate-Drain Charge --- 2.86 4.0 T d(on) Turn-On Delay Time V DD =10V , V GS =4.5V , R G =3.3Ω I D =5A --- 5 10.0 ns T r Rise Time --- 53.4 96 T d(off) Turn-Off Delay Time --- 27 54 T f Fall Time --- 8.8 17.6 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 865 1211 pF C oss Output Capacitance --- 86 120 C rss Reverse Transfer Capacitance --- 72 101 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 5.8 A I SM Pulsed Source Current 2,4 --- --- 24 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =5A , dI/dt=100A/µs , T J =25℃ --- 8.3 --- nS Q rr Reverse Recovery Charge --- 2.4 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics UG2502W

Dual N-Ch 20V Fast Switching MOSFETs 12345 V GS (V) R DSON (mΩ) I D =5A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UG2502W

Dual N-Ch 20V Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UG2502W