UD6016

UD6016 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =30A --- 10 12 mΩ V GS =4.5V , I D =15A --- 12 15 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.2 --- 2.5 V GS(th) V GS(th) Temperature Coefficient --- -5.76 --- mV/℃ I DSS Drain-Source Leakage Current V DS =48V , V GS =0V , T J =25℃ --- --- 1 uA V DS =48V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =30A --- 42 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 1.5 3 Ω Q g Total Gate Charge (4.5V) V DS =48V , V GS =4.5V , I D =15A --- 28.7 40.2 nC Q gs Gate-Source Charge --- 10.5 14.7 Q gd Gate-Drain Charge --- 9.9 14.0 T d(on) Turn-On Delay Time V DD =30V , V GS =10V , R G =3.3Ω, I D =15A --- 10.4 20.8 ns T r Rise Time --- 9.2 16.6 T d(off) Turn-Off Delay Time --- 63 126 T f Fall Time --- 4.8 9.6 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 3240 4536 pF C oss Output Capacitance --- 210 294 C rss Reverse Transfer Capacitance --- 146 204 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =30A 77 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 47 A I SM Pulsed Source Current 2,6 --- --- 100 A V SD Diode Forward Voltage V GS =0V , I S =A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =15A , dI/dt=100A/µs , T J =25℃ --- 18 --- nS Q rr Reverse Recovery Charge --- 14 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD6016

N-Ch 60V Fast Switching MOSFETs 100 125 01234 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =7V V GS =5V V GS =4.5V V GS =3V V GS =10V 9.5 10.0 10.5 11.0 11.5 468 1 0 V GS (V) R DSON (mΩ) I D =12A 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( ℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD6016

N-Ch 60V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 V DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UD6016