UD6004

UD6004 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV RDDSS S(ON)

N-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D V GS =10V , I D =15A --- 25 30 R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =10A --- 30 38 mΩ V GS(th) Gate Threshold Voltage 1.2 2.5 V GS(th) V GS(th) Temperature Coefficient V GS DS , I D =250uA --- -5.24 --- mV/℃ V DS =48V , V GS =0V , T J =25℃ --- --- 1 I DSS Drain-Source Leakage Current V DS =48V , V GS =0V , T J =55℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =15A --- 17 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 3.2 Ω Q g Total Gate Charge (4.5V) --- 12.56 --- Q gs Gate-Source Charge --- 3.24 --- Q gd Gate-Drain Charge V DS =48V , V GS =4.5V , I D =10A --- 6.31 --- nC T d(on) Turn-On Delay Time --- 8 --- T r Rise Time --- 14.2 --- T d(off) Turn-Off Delay Time --- 24.4 --- T f Fall Time V DD =30V , V GS =10V , R G =3.3Ω, I D =10A --- 4.6 --- ns C iss Input Capacitance --- 1345 --- C oss Output Capacitance --- 72.5 --- C rss Reverse Transfer Capacitance V DS =25V , V GS =0V , f=1MHz --- 54.4 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 --- --- 25 A I SM Pulsed Source Current 2,6 V G D =0V , Force Current --- --- 50 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =15A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD6004

N-Ch 60V Fast Switching MOSFETs 00 . 511 . 52 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mΩ) I D =12A 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0 5 10 15 20 25 Q G , Total Gate Charge (nC) V GS Gate to Source Voltage (V) I D =12A 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature (℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T J , Junction Temperature ( ℃) Normalized On Resistanc e Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J Fig.6 Normalized R DSON v.s T J UD6004

N-Ch 60V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 V DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 V DS (V) I D (A) Tc=25 o C Single Pulse 100m 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.3 DUTY =0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform UD6004