UD50N03 XINDEYI | Alldatasheet

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 High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  Networking DC-DC Power System  Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery G D S General Description Product Summery

N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0193 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 10 12 mΩ VGS=4.5V , ID=15A --- 15 18 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -3.97 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.6  Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 9.8 13.7 nC Qgs Gate-Source Charge --- 4.2 5.88 Qgd Gate-Drain Charge --- 3.6 5.0 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 4 8.0 ns Tr Rise Time --- 8 14 Td(off) Turn-Off Delay Time --- 31 62 Tf Fall Time --- 4 8 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 940 1316 pF Coss Output Capacitance --- 131 183 Crss Reverse Transfer Capacitance --- 109 153 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy5 VDD=25V , L=0.1mH , IAS=15A 24.6 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- 43 A ISM Pulsed Source Current2,6 --- --- 112 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 8.5 --- nS Qrr Reverse Recovery Charge --- 2.2 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics Electrical Characteristics (T J =25ć, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics Unitpower

N-Ch 30V Fast Switching MOSFETs 100 120 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-Source Voltage (V) I D Drain Current (A V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 4 6 8 10 V GS (V) R DSON (mΩ) I D =30A 0 0.3 0.6 0.9 1.2 V SD , Source-to-Drain Voltage (V) I S Source Current(A T J =175℃ T J =25℃ 0.5 1.5 -50 25 100 175 T J ,Junction Temperature ( ℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J Unitpower

N-Ch 30V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 V DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 V DS (V) I D (A) 10us 1ms 10ms 100ms DC T C =25℃ Single Pulse 100us 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 T d(on) T r T on T d(off) T f T off V DS V GS 90% 10% I AS V GS BV DSS V DD EAS=

2 L x I

x BV DSS BV DSS DD Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform FFFwaveform Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching WaveformFig.11 Unclamped Inductive Switching WaveformFig.11 Unclamped Inductive Switching Waveform Fig.11 Unclamped Inductive Switching Waveform Unitpower