UD3010

UD3010 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =10A --- 38 45 mΩ V GS =4.5V , I D =5A --- 56 70 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient --- -3.04 --- mV/℃ I DSS Drain-Source Leakage Current V DS =24V , V GS =0V , T J =25℃ --- --- 1 uA V DS =24V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =10A --- 6.7 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (4.5V) V DS =15V , V GS =4.5V , I D =10A --- 2.65 3.71 nC Q gs Gate-Source Charge --- 1.08 1.51 Q gd Gate-Drain Charge --- 1.06 1.48 T d(on) Turn-On Delay Time V DD =15V , V GS =10V , R G =3.3Ω I D =10A --- 1.0 2.0 ns T r Rise Time --- 13.8 24.8 T d(off) Turn-Off Delay Time --- 7.2 14.4 T f Fall Time --- 3.6 7.2 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 220 308.0 pF C oss Output Capacitance --- 38 53.2 C rss Reverse Transfer Capacitance --- 32 44.8 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 15 A I SM Pulsed Source Current 2,4 --- --- 30 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1 V t rr Reverse Recovery Time I F =10A , dI/dt=100A/µs , T J =25℃ --- 4.2 --- nS Q rr Reverse Recovery C harge --- 0.83 --- nC Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. UD3010

N-Ch 30V Fast Switching MOSFETs 40.0 50.0 60.0 70.0 80.0 2468 1 0 V GS (V) R DSON (mΩ) I D =10A 0 0.3 0.6 0.9 1.2 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( ℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD3010

N-Ch 30V Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 V DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 V DS (V) I D (A) 10us 100us 10ms 100ms DC T C =25℃ Single Pulse 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UD3010