UD3005 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV DSS R DS(ON)

P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-10V , I D =-30A --- 12 15 mΩ V GS =-4.5V , I D =-15A --- 20 25 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -1.0 -1.5 -2.5 V GS(th) V GS(th) Temperature Coefficient --- 4.6 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃ --- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±25V , V DS gfs Forward Transconductance V DS =-5V , I D =-30A --- 30 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 9 18 Ω Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-15A --- 22 30.8 nC Q gs Gate-Source Charge --- 8.7 12.2 Q gd Gate-Drain Charge --- 7.2 10 T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V , R G =3.3Ω I D =-15A --- 8 16 ns T r Rise Time --- 73.7 132 T d(off) Turn-Off Delay Time --- 61.8 123 T f Fall Time --- 24.4 48 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 2215 3100 pF C oss Output Capacitance --- 310 434 C rss Reverse Transfer Capacitance --- 237 330 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- -45 A I SM Pulsed Source Current 2,6 --- --- -150 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ --- --- -1 V t rr Reverse Recovery Time I F =-15A , dI/dt=100A/µs , T J =25℃ --- 19 --- nS Q rr Reverse Recovery Charge --- 9 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-50A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD3005

P-Ch 30V Fast Switching MOSFETs SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0 9 18 27 36 45 Q G , Total Gate Charge (nC) GS Gate to Source Voltage (V) V DS =-15V I D =-15A 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD3005

P-Ch 30V Fast Switching MOSFETs 100 1000 10000 1 5 9 1 31 72 12 5 DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.02 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.01 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UD3005