UD0016

UD0016 XINDEYI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery BV RDDSS S(ON)

N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =20A --- 38 47 mΩ V GS =4.5V , I D =15A --- 40 50 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient --- -5.52 --- mV/℃ I DSS Drain-Source Leakage Current V DS =80V , V GS =0V , T J =25℃ --- --- 10 uA V DS =80V , V GS =0V , T J =55℃ --- --- 100 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (10V) V DS =80V , V GS =10V , I D =20A --- 60 84 nC Q gs Gate-Source Charge --- 9.7 14 Q gd Gate-Drain Charge --- 11.8 16.5 T d(on) Turn-On Delay Time V DD =50V , V GS =10V , R G =3.3Ω I D =20A --- 10.4 21 ns T r Rise Time --- 46 83 T d(off) Turn-Off Delay Time --- 54 108 T f Fall Time --- 10 20 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 3848 5387 pF C oss Output Capacitance --- 137 192 C rss Reverse Transfer Capacitance --- 82 115 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 22 A I SM Pulsed Source Current 2,6 --- --- 45 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =20A , dI/dt=100A/µs , T J =25℃ --- 30 --- nS Q rr Reverse Recovery Charge --- 37 --- nC Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =27A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoreticall y the same as I D and I DM , in real applications , should be limited b y total power dissipation. Guaranteed Avalanche Characteristics UD0016

N-Ch 100V Fast Switching MOSFETs 012345 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 34.0 34.5 35.0 35.5 36.0 36.5 37.0 468 1 0 V GS (V) R DSON (mΩ) I D =12A V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) (V) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UD0016

N-Ch 100V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 2 5 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 DS (V) D (A) Tc=25 o C Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC P DM D = T ON T J peak = T C + P DM x R θJC T ON T 0.02 0.01 0.05 0.1 0.2 DUTY =0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UD0016